| ○種別 (必須): | □ | 学術論文 (審査論文)
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| ○言語 (必須): | □ | 英語
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| ○審査 (推奨): | □ | Peer Review
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| ○カテゴリ (推奨): | □ | 研究
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| ○学究種別 (推奨): |
| ○組織 (推奨): | 1. | 徳島大学.ポストLEDフォトニクス研究所 (2019年3月1日〜)
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| ○著者 (必須): | 1. | 永松 謙太郎 ([徳島大学.ポストLEDフォトニクス研究所])
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| 2. | (英) Ando Y. (日) (読)
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| 3. | (英) Kono T. (日) (読)
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| 4. | (英) Cheong H. (日) (読)
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| 5. | (英) Nitta S. (日) (読)
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| 6. | (英) Honda Y. (日) (読)
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| 7. | (英) Pristovsek M. (日) (読)
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| 8. | (英) Amano H. (日) (読)
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| ○題名 (必須): | □ | (英) Effect of substrate misorientation on the concentration of impurities and surface morphology of an epitaxial GaN layer on N-polar GaN substrate by MOVPE (日)
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| ○要約 (任意): | □ | (英) This study examines the effect of (0001) GaN substrate misorientation on the residual impurities and surface morphology of N-polar GaN grown by metalorganic vapor-phase epitaxy. Carbon, silicon, and oxygen concentrations decreased with increasing GaN substrate misorientation angle, with the lowest impurity concentration achieved for a misorientation angle of 2° toward the m-axis, with 6×1015cm3 carbon, 6×1015cm3 silicon, and 4×1017cm3 oxygen atoms. The oxygen concentration was measured at a depth of 0.5μm below the wafer surface, and the oxygen concentration decreased with increasing thickness. The incorporation of carbon and oxygen revealed a strong dependence on the misorientation angle. The step distance height of the steps parallel to the [1120] direction (or perpendicular to the [1100] m-direction) was confirmed to be a double-height layer step. This phenomenon indicated that m-direction steps are stable for N-polar growth in GaN. In cases of large misorientation toward the m-axis in of the GaN substrate it was difficult to control the misorientation perpendicular to the nominal direction leading to a-axis direction by wafer bowing at wafer manufacturing. Therefore, step-bunching was generated for each symmetric m-axis due to an increase in the compound's off-angle, thus causing the surface roughness to become large. (日)
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| ○キーワード (推奨): |
| ○発行所 (推奨): | □ | Elsevier (->組織[Elsevier Science])
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| ○誌名 (必須): | □ | Journal of Crystal Growth ([Elsevier])
(pISSN: 0022-0248)
| ○ISSN (任意): | □ | 0022-0248
ISSN: 0022-0248
(pISSN: 0022-0248) Title: Journal of crystal growthTitle(ISO): J Cryst GrowthPublisher: Elsevier B.V. (NLM Catalog)
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(CrossRef)
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| ○巻 (必須): | □ | 512
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| ○号 (必須): |
| ○頁 (必須): | □ | 78 83
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| ○年月日 (必須): | □ | 西暦 2019年 4月 15日 (平成 31年 4月 15日)
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| ○URL (任意): | □ | https://www.sciencedirect.com/science/article/pii/S0022024819300879
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| ○DOI (任意): | □ | 10.1016/j.jcrysgro.2019.02.013 (→Scopusで検索)
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