『徳島大学 教育・研究者情報データベース (EDB)』---[学外] /
ID: Pass:

登録内容 (EID=358355)

EID=358355EID:358355, Map:0, LastModified:2019年8月28日(水) 09:40:27, Operator:[永松 謙太郎], Avail:TRUE, Censor:0, Owner:[永松 謙太郎], Read:継承, Write:継承, Delete:継承.
種別 (必須): 学術論文 (審査論文) [継承]
言語 (必須): 英語 [継承]
招待 (推奨):
審査 (推奨): Peer Review [継承]
カテゴリ (推奨): 研究 [継承]
共著種別 (推奨):
学究種別 (推奨):
組織 (推奨):
著者 (必須): 1. (英) Uesugi K. (日) (読)
役割 (任意):
貢献度 (任意):
学籍番号 (推奨):
[継承]
2. (英) Hayashi Y. (日) (読)
役割 (任意):
貢献度 (任意):
学籍番号 (推奨):
[継承]
3. (英) Shojiki K. (日) (読)
役割 (任意):
貢献度 (任意):
学籍番号 (推奨):
[継承]
4. (英) Xiao S. (日) (読)
役割 (任意):
貢献度 (任意):
学籍番号 (推奨):
[継承]
5.永松 謙太郎 ([徳島大学.ポストLEDフォトニクス研究所])
役割 (任意):
貢献度 (任意):
学籍番号 (推奨):
[継承]
6. (英) Yoshida H. (日) (読)
役割 (任意):
貢献度 (任意):
学籍番号 (推奨):
[継承]
7. (英) Miyake H. (日) (読)
役割 (任意):
貢献度 (任意):
学籍番号 (推奨):
[継承]
題名 (必須): (英) Fabrication of AlN templates on SiC substrates by sputtering-deposition and high-temperature annealing  (日)    [継承]
副題 (任意):
要約 (任意): (英) High-quality AlN templates fabricated by sputtering-deposition and post-deposition high-temperature annealing have great potential for deep ultraviolet light-emitting device applications. In this work, we fabricated AlN films on 6H-SiC substrates by sputtering and face-to-face annealing and characterized the structural quality of the AlN films before and after annealing. As reported in previous studies, to accomplish high-quality AlN films on SiC substrates using conventional methods, such as molecular beam epitaxy or metalorganic vapor phase epitaxy (MOVPE), it is important to grow the AlN on the SiC coherently. However, in this work, although the annealed AlN films were fully relaxed from the SiC substrates, or even had tensile strain, the AlN films indicated high crystallinity. The X-ray rocking curve full width at half maximum (XRC-FWHM) values of the 200-nm-thick annealed AlN film were 17 and 246arcsec for the AlN (0002) and (1012) diffraction, respectively. Though the annealed AlN film indicated rough surfaces with bunched step structures, the surface morphology was remarkably improved by MOVPE growth and clear atomic step-and-terrace structures were formed. The XRC-FWHM values of the MOVPE-grown AlN were 90 and 239arcsec for the AlN (0002) and (1012) diffraction, respectively.  (日)    [継承]
キーワード (推奨):
発行所 (推奨): Elsevier (->組織[Elsevier Science]) [継承]
誌名 (必須): Journal of Crystal Growth ([Elsevier])
(pISSN: 0022-0248)

ISSN (任意): 0022-0248
ISSN: 0022-0248 (pISSN: 0022-0248)
Title: Journal of crystal growth
Title(ISO): J Cryst Growth
Publisher: Elsevier BV
 (NLM Catalog  (Scopus  (CrossRef (Scopus information is found. [need login])
[継承]
[継承]
(必須): 510 [継承]
(必須):
(必須): 13 17 [継承]
都市 (任意):
年月日 (必須): 西暦 2019年 3月 15日 (平成 31年 3月 15日) [継承]
URL (任意): https://www.sciencedirect.com/science/article/pii/S0022024819300107 [継承]
DOI (任意): 10.1016/j.jcrysgro.2019.01.011    (→Scopusで検索) [継承]
PMID (任意):
NAID (任意):
WOS (任意):
Scopus (任意):
評価値 (任意):
被引用数 (任意):
指導教員 (推奨):
備考 (任意):

標準的な表示

和文冊子 ● K. Uesugi, Y. Hayashi, K. Shojiki, S. Xiao, Kentaro Nagamatsu, H. Yoshida and H. Miyake : Fabrication of AlN templates on SiC substrates by sputtering-deposition and high-temperature annealing, Journal of Crystal Growth, Vol.510, (号), 13-17, 2019.
欧文冊子 ● K. Uesugi, Y. Hayashi, K. Shojiki, S. Xiao, Kentaro Nagamatsu, H. Yoshida and H. Miyake : Fabrication of AlN templates on SiC substrates by sputtering-deposition and high-temperature annealing, Journal of Crystal Growth, Vol.510, (号), 13-17, 2019.

関連情報

Number of session users = 0, LA = 1.15, Max(EID) = 373348, Max(EOID) = 998911.