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登録内容 (EID=358352)

EID=358352EID:358352, Map:0, LastModified:2020年8月10日(月) 20:25:36, Operator:[山田 美緒], Avail:TRUE, Censor:0, Owner:[永松 謙太郎], Read:継承, Write:継承, Delete:継承.
種別 (必須): 学術論文 (審査論文) [継承]
言語 (必須): 英語 [継承]
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審査 (推奨): Peer Review [継承]
カテゴリ (推奨): 研究 [継承]
共著種別 (推奨):
学究種別 (推奨):
組織 (推奨): 1.徳島大学.ポストLEDフォトニクス研究所 (2019年3月1日〜) [継承]
著者 (必須): 1.永松 謙太郎 ([徳島大学.ポストLEDフォトニクス研究所])
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2. (英) Ando Y. (日) (読)
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3. (英) Kono T. (日) (読)
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4. (英) Cheong H. (日) (読)
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5. (英) Nitta S. (日) (読)
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6. (英) Honda Y. (日) (読)
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7. (英) Pristovsek M. (日) (読)
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8. (英) Amano H. (日) (読)
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題名 (必須): (英) Effect of substrate misorientation on the concentration of impurities and surface morphology of an epitaxial GaN layer on N-polar GaN substrate by MOVPE  (日)    [継承]
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要約 (任意): (英) This study examines the effect of (0001) GaN substrate misorientation on the residual impurities and surface morphology of N-polar GaN grown by metalorganic vapor-phase epitaxy. Carbon, silicon, and oxygen concentrations decreased with increasing GaN substrate misorientation angle, with the lowest impurity concentration achieved for a misorientation angle of 2° toward the m-axis, with 6×1015cm3 carbon, 6×1015cm3 silicon, and 4×1017cm3 oxygen atoms. The oxygen concentration was measured at a depth of 0.5μm below the wafer surface, and the oxygen concentration decreased with increasing thickness. The incorporation of carbon and oxygen revealed a strong dependence on the misorientation angle. The step distance height of the steps parallel to the [1120] direction (or perpendicular to the [1100] m-direction) was confirmed to be a double-height layer step. This phenomenon indicated that m-direction steps are stable for N-polar growth in GaN. In cases of large misorientation toward the m-axis in of the GaN substrate it was difficult to control the misorientation perpendicular to the nominal direction leading to a-axis direction by wafer bowing at wafer manufacturing. Therefore, step-bunching was generated for each symmetric m-axis due to an increase in the compound's off-angle, thus causing the surface roughness to become large.  (日)    [継承]
キーワード (推奨):
発行所 (推奨): Elsevier (->組織[Elsevier Science]) [継承]
誌名 (必須): Journal of Crystal Growth ([Elsevier])
(pISSN: 0022-0248)

ISSN (任意): 0022-0248
ISSN: 0022-0248 (pISSN: 0022-0248)
Title: Journal of crystal growth
Title(ISO): J Cryst Growth
Publisher: Elsevier BV
 (NLM Catalog  (Scopus  (CrossRef (Scopus information is found. [need login])
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(必須): 78 83 [継承]
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年月日 (必須): 西暦 2019年 4月 15日 (平成 31年 4月 15日) [継承]
URL (任意): https://www.sciencedirect.com/science/article/pii/S0022024819300879 [継承]
DOI (任意): 10.1016/j.jcrysgro.2019.02.013    (→Scopusで検索) [継承]
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標準的な表示

和文冊子 ● Kentaro Nagamatsu, Y. Ando, T. Kono, H. Cheong, S. Nitta, Y. Honda, M. Pristovsek and H. Amano : Effect of substrate misorientation on the concentration of impurities and surface morphology of an epitaxial GaN layer on N-polar GaN substrate by MOVPE, Journal of Crystal Growth, Vol.512, (号), 78-83, 2019.
欧文冊子 ● Kentaro Nagamatsu, Y. Ando, T. Kono, H. Cheong, S. Nitta, Y. Honda, M. Pristovsek and H. Amano : Effect of substrate misorientation on the concentration of impurities and surface morphology of an epitaxial GaN layer on N-polar GaN substrate by MOVPE, Journal of Crystal Growth, Vol.512, (号), 78-83, 2019.

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