『徳島大学 教育・研究者情報データベース (EDB)』---[学外] /
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登録内容 (EID=336904)

EID=336904EID:336904, Map:0, LastModified:2018年12月2日(日) 22:58:19, Operator:[大家 隆弘], Avail:TRUE, Censor:0, Owner:[加藤 真樹], Read:継承, Write:継承, Delete:継承.
種別 (必須): 学術論文 (審査論文) [継承]
言語 (必須): 英語 [継承]
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著者 (必須): 1.盧 翔孟
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2.熊谷 直人
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3.南 康夫 ([徳島大学.大学院社会産業理工学研究部.理工学域.ナノマテリアルテクノロジー(日亜)])
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4.北田 貴弘 (->個人[塚越 貴弘])
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題名 (必須): (英) Sublattice reversal in GaAs/Ge/GaAs (113)B heterostructures and its application to THz emitting devices based on a coupled multilayer cavity  (日)    [継承]
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要約 (任意): (英) We fabricated a coupled multilayer cavity with a GaAs/Ge/GaAs sublattice reversal structure for terahertz emission application. Sublattice reversal in GaAs/Ge/GaAs was confirmed by comparing the anisotropic etching profile of an epitaxial sample with those of reference (113)A and (113)B GaAs substrates. The interfaces of GaAs/Ge/GaAs were evaluated at the atomic level by scanning transmission electron microscopy (STEM) and energy-dispersive X-ray spectroscopy (EDX) mapping. Defect-free GaAs/Ge/GaAs heterostructures were observed in STEM images and the sublattice lattice was directly seen through atomic arrangements in EDX mapping. A GaAs/AlAs coupled multilayer cavity with a sublattice reversal structure was grown on the (113)B GaAs substrate after the confirmation of sublattice reversal. Smooth GaAs/AlAs interfaces were formed over the entire region of the coupled multilayer cavity structure both below and above the Ge layer. Two cavity modes with a frequency difference of 2.9 THz were clearly observed.  (日)    [継承]
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誌名 (必須): Japanese Journal of Applied Physics ([応用物理学会])
(pISSN: 0021-4922, eISSN: 1347-4065)

ISSN (任意): 1347-4065
ISSN: 0021-4922 (pISSN: 0021-4922, eISSN: 1347-4065)
Title: Japanese journal of applied physics (2008)
Title(ISO): Jpn J Appl Phys (2008)
Supplier: 社団法人応用物理学会
Publisher: Japan Society of Applied Physics
 (NLM Catalog  (Webcat Plus  (Webcat Plus  (Webcat Plus  (Scopus  (Scopus  (Scopus  (CrossRef (Scopus information is found. [need login])
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(必須): 57 [継承]
(必須): 4S [継承]
(必須): 04FH07 04FH07 [継承]
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年月日 (必須): 西暦 2018年 3月 13日 (平成 30年 3月 13日) [継承]
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DOI (任意): 10.7567/JJAP.57.04FH07    (→Scopusで検索) [継承]
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Scopus (任意): 2-s2.0-85044456924 [継承]
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備考 (任意): 1.(英)   (日) 「国際会議」として別データ有り EID=333735   [継承]

標準的な表示

和文冊子 ● Xiangmeng Lu, Naoto Kumagai, Yasuo Minami and Takahiro Kitada : Sublattice reversal in GaAs/Ge/GaAs (113)B heterostructures and its application to THz emitting devices based on a coupled multilayer cavity, Japanese Journal of Applied Physics, Vol.57, No.4S, 04FH07, 2018.
欧文冊子 ● Xiangmeng Lu, Naoto Kumagai, Yasuo Minami and Takahiro Kitada : Sublattice reversal in GaAs/Ge/GaAs (113)B heterostructures and its application to THz emitting devices based on a coupled multilayer cavity, Japanese Journal of Applied Physics, Vol.57, No.4S, 04FH07, 2018.

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