〔閲覧〕【著作】(Wang X Hong/Wang Tao/Mahanty Sourindra/Komatsu F/Inaoka T/[西野 克志]/[酒井 士郎]/Growth of GaN layer by metallorganic vapor deposition system with a novel three-flow reactor/[Journal of Crystal Growth])
(resolved by 0022-0248) ISSN: 0022-0248
(pISSN: 0022-0248) Title: Journal of crystal growth Title(ISO): J Cryst Growth Publisher: Elsevier BV (NLM Catalog) (Scopus) (CrossRef)
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218
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148 154
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西暦 2000年 1月 1日 (平成 12年 1月 1日)
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和文冊子 ●
Hong X Wang, Tao Wang, Sourindra Mahanty, F Komatsu, T Inaoka, Katsushi NishinoandShiro Sakai : Growth of GaN layer by metallorganic vapor deposition system with a novel three-flow reactor, Journal of Crystal Growth, Vol.218, (号), 148-154, 2000.
欧文冊子 ●
Hong X Wang, Tao Wang, Sourindra Mahanty, F Komatsu, T Inaoka, Katsushi NishinoandShiro Sakai : Growth of GaN layer by metallorganic vapor deposition system with a novel three-flow reactor, Journal of Crystal Growth, Vol.218, (号), 148-154, 2000.
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