『徳島大学 教育・研究者情報データベース (EDB)』---[学外] /
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EID=229897EID:229897, Map:0, LastModified:2018年11月27日(火) 16:36:51, Operator:[加藤 真樹], Avail:TRUE, Censor:0, Owner:[加藤 真樹], Read:継承, Write:継承, Delete:継承.
○種別 (必須): □学術論文 (審査論文) [継承]
○言語 (必須): □英語 [継承]
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○組織 (推奨): 1.徳島大学.大学院社会産業理工学研究部.フロンティア研究センター.光ナノテクノロジー研究部門.ナノマテリアルテクノロジー分野(日亜寄附講座) (〜2018年3月31日) [継承]
○著者 (必須): 1.北田 貴弘 ([徳島大学.大学院社会産業理工学研究部.理工学域.ナノマテリアルテクノロジー(日亜)]/->個人[塚越 貴弘])
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2. (英) Takahashi Tomoya (日) (読)
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3. (英) Ueyama Hyuga (日) (読)
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4.森田 健
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5.井須 俊郎
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○題名 (必須): □(英) Marked reduction in photocarrier lifetime by erbium doping into self-assembled InAs quantum dots embedded in strain-relaxed InGaAs barriers  (日)    [継承]
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○要約 (任意): □(英) Effects of erbium doping on photocarrier lifetime have been investigated for self-assembled InAs quantum dots (QDs) embedded in strain-relaxed In0.35Ga0.65As barriers grown on (100) GaAs substrates by molecular beam epitaxy. Time-resolved transmission change measurements were performed on 20-layer stacks of the Er-doped InAs QDs at room temperature using 0.1 ps laser pulses with the center wavelength of 1.5 um. Fast and slow decay components were observed in the temporal profile of eachEr-doped InAs QD sample. The slow decay component attributed to the radiative recombination process in the QDs was well suppressed by increasing Er-doping density. Moreover, the decay time of the fast component due to the nonradiative process was markedly reduced by the incorporation of Er dopants during the QD formation. A decay time of 3.5 ps was obtained for the Er-doped InAs QD sample with a sheet density of incorporated Er dopants per QD layer of 2.7×1013cm-2.  (日)    [継承]
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○誌名 (必須): □Journal of Crystal Growth ([Elsevier])
(pISSN: 0022-0248)

○ISSN (任意): □0022-0248
ISSN: 0022-0248 (pISSN: 0022-0248)
Title: Journal of crystal growth
Title(ISO): J Cryst Growth
Publisher: Elsevier BV
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○巻 (必須): □323 [継承]
○号 (必須): □1 [継承]
○頁 (必須): □241 243 [継承]
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○年月日 (必須): □西暦 2011年 5月 30日 (平成 23年 5月 30日) [継承]
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○DOI (任意): □10.1016/j.jcrysgro.2010.10.120    (→Scopusで検索) [継承]
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○WOS (任意): □000292175000060 [継承]
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標準的な表示

和文冊子 ● Takahiro Kitada, Tomoya Takahashi, Hyuga Ueyama, Ken Morita and Toshiro Isu : Marked reduction in photocarrier lifetime by erbium doping into self-assembled InAs quantum dots embedded in strain-relaxed InGaAs barriers, Journal of Crystal Growth, Vol.323, No.1, 241-243, 2011.
欧文冊子 ● Takahiro Kitada, Tomoya Takahashi, Hyuga Ueyama, Ken Morita and Toshiro Isu : Marked reduction in photocarrier lifetime by erbium doping into self-assembled InAs quantum dots embedded in strain-relaxed InGaAs barriers, Journal of Crystal Growth, Vol.323, No.1, 241-243, 2011.

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