『徳島大学 教育・研究者情報データベース (EDB)』---[学外] /
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種別 (必須): 学術論文 (審査論文) [継承]
言語 (必須): 英語 [継承]
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審査 (推奨): Peer Review [継承]
カテゴリ (推奨): 研究 [継承]
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学究種別 (推奨):
組織 (推奨): 1.徳島大学.工学部.光応用工学科.光機能材料講座 [継承]
2.三重大学 [継承]
3.東京農工大学 [継承]
著者 (必須): 1.森 篤史
役割 (任意): (英)   (日) 執筆,計算,シミュレーション,考察   [継承]
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2. (英) Ito, Tomonori (日) 伊藤 智徳 (読) いとう とものり
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3. (英) Kangawa, Yoshihiro (日) 寒川 義裕 (読) かんがわ よしひろ
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4. (英) Koukitu, Akinori (日) 纐纈 明伯 (読) こうきつ あきのり
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題名 (必須): (英) Superlattice stacking structure in InGaN thin film pseudomorphic to GaN (0001) substrate: semigrand canonical Monte Carlo simulation  (日)    [継承]
副題 (任意):
要約 (任意): (英) Superlattice stacking structures in the Ga-rich branch of wurtzite InxGa1-xN/GaN were found using semigrand canonical Monte Carlo simulations, which were performed aiming at the construction of the alloy phase diagram [Mori et al., Mater. Phys. Mech. 6, 49 (2003)]. Simulated systems were InxGa1-xN thin films pseudomorphic to the GaN (0001) substrate. Continuing the simulations, we revealed that In-rich layers parallel to the substrate were formed in Ga-rich regions. At 800 K, traversing along the c direction GGGIGGGI superlattice-type stackings were more frequently observed, where G and I indicate the Ga-rich and In-rich layers, respectively. As the temperature increased along the two-phase boundary the superlattice structure changes so that many In-rich layers were included. The In content of the Ga-rich phase eventually exceeded 0.5 at a higher temperature such as 875 K.  (日)    [継承]
キーワード (推奨):
発行所 (推奨): Wiley-VCH [継承]
誌名 (必須): Physica Status Solidi (C) Current Topics in Solid State Physics ([Wiley-VCH])
(pISSN: 1862-6351, eISSN: 1610-1642)

ISSN (任意): 1610-1642
ISSN: 1862-6351 (pISSN: 1862-6351, eISSN: 1610-1642)
Title: Physica Status Solidi (C) Current Topics in Solid State Physics
Publisher: Wiley - V C H Verlag GmbbH & Co.
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(必須): 7 [継承]
(必須): 2486 2489 [継承]
都市 (任意): 奈良 (Nara/[日本国]) [継承]
年月日 (必須): 西暦 2003年 12月 初日 (平成 15年 12月 初日) [継承]
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DOI (任意): 10.1002/pssc.200303347    (→Scopusで検索) [継承]
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備考 (任意): 1.(英) Fifth International Conference on Nitride Semiconductor  (日)    [継承]
2.(英) 29 May, 2003; Th-P3.027, Superlattice stacking structure in InGaN film pseudomorphic to the substrates: semigrand canonical Monte Carlo simulations  (日)    [継承]

標準的な表示

和文冊子 ● Atsushi Mori, Tomonori Ito, Yoshihiro Kangawa and Akinori Koukitu : Superlattice stacking structure in InGaN thin film pseudomorphic to GaN (0001) substrate: semigrand canonical Monte Carlo simulation, Physica Status Solidi (C) Current Topics in Solid State Physics, Vol.0, No.7, 2486-2489, 2003.
欧文冊子 ● Atsushi Mori, Tomonori Ito, Yoshihiro Kangawa and Akinori Koukitu : Superlattice stacking structure in InGaN thin film pseudomorphic to GaN (0001) substrate: semigrand canonical Monte Carlo simulation, Physica Status Solidi (C) Current Topics in Solid State Physics, Vol.0, No.7, 2486-2489, 2003.

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