〔閲覧〕【著作】([日下 一也]/[英 崇夫]/Crystal Orientation and Residual Stress in Chromium Nitride Films Deposited by Arc-Ion Plating/Materials Science Research International, Special Technical Publication)
(英) Crystal Orientation and Residual Stress in Chromium Nitride Films Deposited by Arc-Ion Plating (日)
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(英) Chromium Nitride (CrN) films are considered to be useful as piston ring and connecting rod materials in engines because such films are very hard and durable. We investigated the hardness and roughness of CrN films deposited on steel (JIS: S50C) substrates by the arc-ion plating (AIP) method, and the crystal orientation and residual stress were investigated by X-ray diffraction. The CrN films were deposited under the following conditions. The pressure of the nitrogen atmosphere was maintained at a constant 2.66 Pa, the substrate temperature was maintained at about 573 K, the arc discharge current was 50 and 100 A in two separate tests, the bias voltage applied to the substrate was varied between -300 and 0 V, and the table-mounted substrate holder was rotated at 3 rpm. We obtained the following results: (1) the Vickers micro-hardness of the films was about 1500 HV at low bias voltage (VB=0 V) and about 2500 HV at negative bias voltages exceeding -10 V, (2) the surface of films became smoother with increasing in negative bias voltage, (3) X-ray diffraction patterns revealed that the film is {111}-oriented at low arc current (IA=50 A) and low bias voltage (VB=0 V), {100}-oriented at high arc current (IA=100 A) and low bias voltage (VB=0 V), and {110}-oriented at negative bias voltages exceeding -100 V, and (4) compressive residual stress was observed in almost all films. (日) 窒化クロム(CrN)膜は非常に硬く,高強度のために,エンジンのピストンリングや連結ロッドとしての使用が考えられている.我々はアークイオンプレーティング(AIP)法により炭素鋼(JIS:S50C)基板上に堆積したCrN膜の硬さと粗さを調べた.また,X線回折を用いて結晶配向性および残留応力も調べた.次の条件でCrN膜を堆積した.窒素雰囲気ガスの圧力を2.66Paに固定し,基板温度を約573Kに保持し,アーク電流は50Aと100Aの2つの状態に設定し,基板に供給するバイアス電圧は-300Vと0Vの間で変化させ,試料台を設置するテーブルを約3rpmで回転させた.我々は以下の結果を得た.(1)膜のヴィッカース微小硬さは,低バイアス電圧(VB=0 V)で約1500HV,-10Vを超える負のバイアス電圧で約2500であった.(2)膜表面は負のバイアス電圧の増加とともに滑らかになった.(3)X線回折線図より,低アーク電流(IA=50 A)低バイアス電圧(VB=0 V)で{111}配向,高アーク電流(IA=100 A)低バイアス電圧(VB=0 V)で{100}配向,-100Vを超える負のバイアス電圧で{110}配向となることが明らかになった.(4)ほとんどすべての膜において圧縮残留応力が確認された.
Kazuya KusakaandTakao Hanabusa : Crystal Orientation and Residual Stress in Chromium Nitride Films Deposited by Arc-Ion Plating, Materials Science Research International, Special Technical Publication, 1, (号), 299-302, 2001.
欧文冊子 ●
Kazuya KusakaandTakao Hanabusa : Crystal Orientation and Residual Stress in Chromium Nitride Films Deposited by Arc-Ion Plating, Materials Science Research International, Special Technical Publication, 1, (号), 299-302, 2001.
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