『徳島大学 教育・研究者情報データベース (EDB)』---[学外] /
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登録内容 (EID=194262)

EID=194262EID:194262, Map:0, LastModified:2019年8月13日(火) 19:19:13, Operator:[大家 隆弘], Avail:TRUE, Censor:0, Owner:[川上 烈生], Read:継承, Write:継承, Delete:継承.
種別 (必須): 学術論文 (審査論文) [継承]
言語 (必須): 英語 [継承]
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組織 (推奨): 1.徳島大学.工学部.電気電子工学科.物性デバイス講座 [継承]
著者 (必須): 1.川上 烈生 ([徳島大学.大学院社会産業理工学研究部.理工学域.電気電子系.物性デバイス分野]/[徳島大学.理工学部.理工学科.電気電子システムコース.物性デバイス講座])
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2.稲岡 武
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3.富永 喜久雄
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4. (英) Takashi Mukai (日) (読)
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題名 (必須): (英) Effects of Capacitively Coupled Radio Frequency Krypton and Argon Plasmas on Gallium Nitride Etching Damage  (日)    [継承]
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要約 (任意): (英) GaN etching damage characteristics by capacitively coupled radio frequency Kr and Ar plasmas have been found to differ significantly, on the basis of experimental and simulation results. The morphology of a GaN surface etched by Kr plasma is as smooth as that of the as-grown surface, and is independent of gas pressure and etching time. The agreement between the experimental and simulated etching depths for the Kr plasma, which are lower than those for the Ar plasma, indicates a significant contribution to the GaN damage of the physical etching effect. In contrast, Ar plasma etching produces a rough surface, which is dependent on gas pressure and etching time, and appears to be due to a chemical effect. The difference in the GaN surface morphologies etched by the Kr and Ar plasmas may be attributed to the different depths etched for these two plasmas. Moreover, the simulation shows that, for the Kr plasma, Ga is preferentially etched from GaN, whereas the preferential etching of N occurs for the Ar plasma. The difference in preferential etching between the Kr and Ar plasmas may be related to the difference between the GaN surface morphologies etched by these two plasmas.  (日)    [継承]
キーワード (推奨):
発行所 (推奨): 物理系学術誌刊行協会 [継承]
誌名 (必須): Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes) ([応用物理学会])
(pISSN: 0021-4922, eISSN: 1347-4065)

ISSN (任意): 0021-4922
ISSN: 0021-4922 (pISSN: 0021-4922, eISSN: 1347-4065)
Title: Japanese journal of applied physics (2008)
Title(ISO): Jpn J Appl Phys (2008)
Supplier: 社団法人応用物理学会
Publisher: Japan Society of Applied Physics
 (NLM Catalog  (Webcat Plus  (Webcat Plus  (Webcat Plus  (Scopus  (Scopus  (Scopus  (CrossRef (Scopus information is found. [need login])
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(必須): 48 [継承]
(必須): 8 [継承]
(必須): 08HF01-1 08HF01-4 [継承]
都市 (任意): 東京 (Tokyo/[日本国]) [継承]
年月日 (必須): 西暦 2009年 8月 10日 (平成 21年 8月 10日) [継承]
URL (任意): http://ci.nii.ac.jp/naid/150000052764/ [継承]
DOI (任意): 10.1143/JJAP.48.08HF01    (→Scopusで検索) [継承]
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NAID (任意): 210000067284 [継承]
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標準的な表示

和文冊子 ● Retsuo Kawakami, Takeshi Inaoka, Kikuo Tominaga and Mukai Takashi : Effects of Capacitively Coupled Radio Frequency Krypton and Argon Plasmas on Gallium Nitride Etching Damage, Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.48, No.8, 08HF01-1-08HF01-4, 2009.
欧文冊子 ● Retsuo Kawakami, Takeshi Inaoka, Kikuo Tominaga and Mukai Takashi : Effects of Capacitively Coupled Radio Frequency Krypton and Argon Plasmas on Gallium Nitride Etching Damage, Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.48, No.8, 08HF01-1-08HF01-4, 2009.

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