〔閲覧〕【著作】(Fareed Qhalid/鳥取 悟/[稲岡 武]/[西野 克志]/[酒井 士郎]/Dependence of growth conditions on morphology in lateral epitaxial overgrowth of GaN by sublimation method/[Journal of Crystal Growth])
(resolved by 0022-0248) ISSN: 0022-0248
(pISSN: 0022-0248) Title: Journal of crystal growth Title(ISO): J Cryst Growth Publisher: Elsevier BV (NLM Catalog) (Scopus) (CrossRef)
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207
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3
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174 178
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西暦 1999年 12月 1日 (平成 11年 12月 1日)
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和文冊子 ●
Qhalid Fareed, Satoru Tottori, Takeshi Inaoka, Katsushi NishinoandShiro Sakai : Dependence of growth conditions on morphology in lateral epitaxial overgrowth of GaN by sublimation method, Journal of Crystal Growth, Vol.207, No.3, 174-178, 1999.
欧文冊子 ●
Qhalid Fareed, Satoru Tottori, Takeshi Inaoka, Katsushi NishinoandShiro Sakai : Dependence of growth conditions on morphology in lateral epitaxial overgrowth of GaN by sublimation method, Journal of Crystal Growth, Vol.207, No.3, 174-178, 1999.
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