〔閲覧〕【著作】（[日下 一也]/[英 崇夫]/西田 真之/[猪子 富久治]/Residual Stress and in-situ Thermal Stress Measurement of Aluminum Film Deposited on Silicon Wafer/[Thin Solid Films]）
(英) Residual Stress and in-situ Thermal Stress Measurement of Aluminum Film Deposited on Silicon Wafer (日)
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(英) Residual stresses in aluminum film deposited on a silicon wafer were measured after annealing and quenching. In all cases, residual stresses were tensile, but slow cooling produced lager stresses than quenching. Residual stresses of slow-cooled samples became relaxed after annealing above 300℃. Film passivation by carbon deposition retarded the relaxation of residual stress. In-situ X-ray stress measurement revealed that compressive stresses developed in a heating stage and tensile stresses in a cooling stage. From a scanning electron microscopy observation, it becomes clear that the former contributes to nucleation of hillocks and the latter to void formation and growth. (日) 焼鈍および急冷後，シリコンウエハ上に堆積させたアルミニウム膜の残留応力を測定した．すべての場合において残留応力は引張となるが，除冷は急冷よりも大きな応力を形成する．除冷試料の残留応力300℃以上での焼鈍後に緩和する．炭素の保護膜は残留応力の緩和に関係する．加熱段階で圧縮応力が，冷却段階で引張残留応力が形成されることがX線応力その場測定により明らかになった．走査型電子顕微鏡観察より，ヒロックの核が形成され，その後，ボイドが形成し成長することが明らかになった．