『徳島大学 教育・研究者情報データベース (EDB)』---[学外] /
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種別 (必須): 学術論文 (審査論文) [継承]
言語 (必須): 英語 [継承]
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著者 (必須): 1. (英) Watanabe Issei (日) (読)
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2. (英) Kanzaki Kenji (日) (読)
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3.北田 貴弘 ([徳島大学.大学院社会産業理工学研究部.理工学域.ナノマテリアルテクノロジー(日亜)]/->個人[塚越 貴弘])
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4. (英) Yamamoto Masashi (日) (読)
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5. (英) Shimomura Satoshi (日) (読)
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6. (英) Hiyamizu Satoshi (日) (読)
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題名 (必須): (英) Characterization of interface roughness scattering of electrons in an In0.53Ga0.47As/In0.52Al0.48As QW-HEMT structure with (411)A super-flat interfaces  (日)    [継承]
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要約 (任意): (英) In order to characterize interface roughness scattering, two-dimensional electron gas (2DEG) mobility in (4 1 1)A and(1 0 0) selectively-doped In0:53Ga0:47As/In0:52Al0:48As quantum well (QW) HEMT structures, which were grown on InP substrates by molecular beam epitaxy, with a gate contact was measured at 20 K as a function of sheet electron concentration (Ns) by changing gate bias. Thickness of the QW was designed to be rather small (6 nm) for enhancing theinterface roughness scattering for both samples. 2DEG mobilities of the (4 1 1)A sample were 21,000-51,400 cm2/Vs inthe range of Ns=0.7-1.7×1012cm-2,which are about more than 2 times higher than the mobilities (8,700-25,400 cm2/Vs) of the conventional (1 0 0) sample. 2DEG mobility was calculated by taking into account interfaceroughness scattering and ionized remote impurity scattering. By fitting the calculated results to the observed ones,lateral size (Λ) and height (Δ) of the interface roughness of the (4 1 1)A sample were determined to be 3.5 and 0.23 nm, respectively, which are 30% and 50% smaller than the corresponding values (Λ=5.0nm and Δ=0.43nm) of the(1 0 0) sample.  (日)    [継承]
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誌名 (必須): Journal of Crystal Growth ([Elsevier])
(pISSN: 0022-0248)

ISSN (任意): 0022-0248
ISSN: 0022-0248 (pISSN: 0022-0248)
Title: Journal of crystal growth
Title(ISO): J Cryst Growth
Publisher: Elsevier BV
 (NLM Catalog  (Scopus  (CrossRef (Scopus information is found. [need login])
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(必須): 251 [継承]
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年月日 (必須): 西暦 2003年 1月 1日 (平成 15年 1月 1日) [継承]
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DOI (任意): 10.1016/S0022-0248(02)02422-3    (→Scopusで検索) [継承]
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WOS (任意): 000182179800017 [継承]
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和文冊子 ● Issei Watanabe, Kenji Kanzaki, Takahiro Kitada, Masashi Yamamoto, Satoshi Shimomura and Satoshi Hiyamizu : Characterization of interface roughness scattering of electrons in an In0.53Ga0.47As/In0.52Al0.48As QW-HEMT structure with (411)A super-flat interfaces, Journal of Crystal Growth, Vol.251, (号), 90-95, 2003.
欧文冊子 ● Issei Watanabe, Kenji Kanzaki, Takahiro Kitada, Masashi Yamamoto, Satoshi Shimomura and Satoshi Hiyamizu : Characterization of interface roughness scattering of electrons in an In0.53Ga0.47As/In0.52Al0.48As QW-HEMT structure with (411)A super-flat interfaces, Journal of Crystal Growth, Vol.251, (号), 90-95, 2003.

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