『徳島大学 教育・研究者情報データベース (EDB)』---[学外] /
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EID=156660EID:156660, Map:0, LastModified:2018年12月3日(月) 17:59:39, Operator:[大家 隆弘], Avail:TRUE, Censor:0, Owner:[加藤 真樹], Read:継承, Write:継承, Delete:継承.
○種別 (必須): □学術論文 (審査論文) [継承]
○言語 (必須): □英語 [継承]
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○著者 (必須): 1.北田 貴弘 ([徳島大学.大学院社会産業理工学研究部.理工学域.ナノマテリアルテクノロジー(日亜)]/->個人[塚越 貴弘])
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2. (英) Aoki Toyohiro (日) (読)
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3. (英) Watanabe Issei (日) (読)
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4. (英) Shimomura Satoshi (日) (読)
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5. (英) Hiyamizu Satoshi (日) (読)
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○題名 (必須): □(英) Optimized channel thickness for high electron mobility in pseudomorphic In0.74Ga0.26As/In0.52Al0.48As quantum-well HEMT structures with (411)A super-flat interfaces grown by MBE  (日)    [継承]
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○要約 (任意): □(英) We have investigated channel thickness (Lw) dependence of transport properties of two-dimensional-electron gas (2DEG) in pseudomorphic In0:74Ga0:26As/In0:52Al0:48As quantum well high electron mobility transistor (QW-HEMT) structures with extremely flat heterointerfaces [(411)A super-at interfaces] grown on (411)A InP substrates by molecular beam epitaxy (MBE). The highest electron mobility of 90,500cm2/Vs (77K) with a sheet carrier concentration (Ns ) of 3.1 1012 cm-2 was observed for the (411)A QW-HEMT structure with Lw=8nm, which is about 1.5 times larger than the best value (μ= 61,000cm2/Vs at 77K) of ever reported electron mobility with a similar Ns of 3.0×1012 cm-2 for the InGaAs/InAlAs QW-HEMT structure grown on a (100) InP substrate. This enhancement of the electron mobility of the (411)A QW-HEMT structure is mainly due to much improved atness of the (411)A InGaAs/InAlAs heterointerfaces compared with those of conventional (100) interfaces, which results in a large reduction of interface roughness scattering of 2DEG.  (日)    [継承]
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○誌名 (必須): □Journal of Crystal Growth ([Elsevier])
(pISSN: 0022-0248)

○ISSN (任意): □0022-0248
ISSN: 0022-0248 (pISSN: 0022-0248)
Title: Journal of crystal growth
Title(ISO): J Cryst Growth
Publisher: Elsevier BV
 (NLM Catalog)   (Scopus)   (CrossRef)  (Scopus information is found. [need login])
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○巻 (必須): □227-228 [継承]
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○頁 (必須): □289 293 [継承]
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○年月日 (必須): □西暦 2001年 1月 1日 (平成 13年 1月 1日) [継承]
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○DOI (任意): □10.1016/S0022-0248(01)00707-2    (→Scopusで検索) [継承]
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和文冊子 ● Takahiro Kitada, Toyohiro Aoki, Issei Watanabe, Satoshi Shimomura and Satoshi Hiyamizu : Optimized channel thickness for high electron mobility in pseudomorphic In0.74Ga0.26As/In0.52Al0.48As quantum-well HEMT structures with (411)A super-flat interfaces grown by MBE, Journal of Crystal Growth, Vol.227-228, (号), 289-293, 2001.
欧文冊子 ● Takahiro Kitada, Toyohiro Aoki, Issei Watanabe, Satoshi Shimomura and Satoshi Hiyamizu : Optimized channel thickness for high electron mobility in pseudomorphic In0.74Ga0.26As/In0.52Al0.48As quantum-well HEMT structures with (411)A super-flat interfaces grown by MBE, Journal of Crystal Growth, Vol.227-228, (号), 289-293, 2001.

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