『徳島大学 教育・研究者情報データベース (EDB)』---[学外] /
ID: Pass:

登録内容 (EID=155241)

EID=155241EID:155241, Map:0, LastModified:2012年11月12日(月) 19:59:05, Operator:[大家 隆弘], Avail:TRUE, Censor:0, Owner:[西野 克志], Read:継承, Write:継承, Delete:継承.
種別 (必須): 学術レター (ショートペーパー) [継承]
言語 (必須): 英語 [継承]
招待 (推奨):
審査 (推奨):
カテゴリ (推奨):
共著種別 (推奨):
学究種別 (推奨):
組織 (推奨): 1.徳島大学.工学部.電気電子工学科.物性デバイス講座 [継承]
著者 (必須): 1. (英) Yan Fawang (日) (読)
役割 (任意):
貢献度 (任意):
学籍番号 (推奨):
[継承]
2.西野 克志 ([徳島大学.大学院社会産業理工学研究部.理工学域.電気電子系.物性デバイス分野]/[徳島大学.理工学部.理工学科.電気電子システムコース.物性デバイス講座])
役割 (任意):
貢献度 (任意):
学籍番号 (推奨):
[継承]
3.酒井 士郎
役割 (任意):
貢献度 (任意):
学籍番号 (推奨):
[継承]
題名 (必須): (英) Growth and Characteristics of GaN Film on Thin AlN/(0001) Sapphire Template Layer via Direct Reaction of Gallium and Ammonia  (日)    [継承]
副題 (任意):
要約 (任意): (英) With the advantages of low cost, simplicity, and scalability, a direct reaction using gallium (Ga) and ammonia (NH3) has been employed to deposit GaN film on a (0001) sapphire substrate. We find that only GaN crystallites with diameters in the range of 0.4-5 μm are sparsely deposited on a bare (0001) sapphire substrate. To increase the density of the GaN nucleation site and thus form continuous GaN film, a 50-nm-thick AlN layer [grown on the (0001) sapphire substrate by metalorganic chemical vapor deposition (MOCVD) at 1150 °C in a pulsed manner] is used as a template layer. Plan-view scanning electron microscopy (SEM) and cross-sectional SEM experimental results show that the GaN film has a specular smooth surface and that the film thickness is about 10 μm after 1 h deposition. X-ray diffraction (XRD) and cathodoluminescence (CL) experimental results indicate that the formed GaN film is of single crystals with a hexagonal structure. The full widths at half-maximum (FWHM) of the (002) and (102) X-ray rocking curves are 420 and 556 arcsec, respectively. Our experimental results demonstrate that the growth of high-quality and thick GaN film via a direct reaction is possible.  (日)    [継承]
キーワード (推奨): 1. (英) gallium nitride (日) (読) [継承]
2. (英) nucleation density (日) (読) [継承]
発行所 (推奨): (英) INSTITUTE OF PURE AND APPLIED PHYSICS (日) Japan Society of Applied Physics (読) [継承]
誌名 (必須): Japanese Journal of Applied Physics, Part 2 (Letters) ([応用物理学会])
ISSN (任意):
[継承]
(必須): 45 [継承]
(必須): 27 [継承]
(必須): L697 L700 [継承]
都市 (任意):
年月日 (必須): 西暦 2006年 7月 14日 (平成 18年 7月 14日) [継承]
URL (任意): http://ci.nii.ac.jp/naid/10017653514/ [継承]
DOI (任意): 10.1143/JJAP.45.L697    (→Scopusで検索) [継承]
PMID (任意):
NAID (任意): 10017653514 [継承]
WOS (任意):
Scopus (任意):
評価値 (任意):
被引用数 (任意):
指導教員 (推奨):
備考 (任意):

標準的な表示

和文冊子 ● Fawang Yan, Katsushi Nishino and Shiro Sakai : Growth and Characteristics of GaN Film on Thin AlN/(0001) Sapphire Template Layer via Direct Reaction of Gallium and Ammonia, Japanese Journal of Applied Physics, Part 2 (Letters), Vol.45, No.27, L697-L700, 2006.
欧文冊子 ● Fawang Yan, Katsushi Nishino and Shiro Sakai : Growth and Characteristics of GaN Film on Thin AlN/(0001) Sapphire Template Layer via Direct Reaction of Gallium and Ammonia, Japanese Journal of Applied Physics, Part 2 (Letters), Vol.45, No.27, L697-L700, 2006.

関連情報

Number of session users = 0, LA = 0.73, Max(EID) = 372616, Max(EOID) = 996877.