〔閲覧〕【著作】([森 篤史]/伊藤 智徳/Laird, Brian B/Superlattice structure along the phase boundary in alloy phase diagram of InGaN thin film by Monte Carlo simulation/Current Topics in Crystal Growth Research)
(英) Superlattice structure along the phase boundary in alloy phase diagram of InGaN thin film by Monte Carlo simulation (日)
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(英) Semigrand canonical (SGC) Monte Carlo (MC) simulation has been performed for InxGa1-xN thin film pseudomorphic to the GaN (0001) substrate. In the SGC ensemble the chemical potential differences, Dm=mIn-mGa, is given. The species identity changes are attempted in the SGC MC simulation with the total number of particles being fixed. Free energies of Ga-rich and In-rich phases at a temperature T=800K have been calculated by integrating the composition (the mole fraction, xIn=nIn/(nIn+nGa)) by Dm in this case. Once one obtained a phase equilibrium condition Dm (T) at T, one can search the phase equilibrium condition at the adjacent temperature T+dT with the help d(Dm)/dT = -Dh/TDx, where Dh and Dx are enthalpy difference and the composition difference, respectively. We have applied this method, the Gibbs-Duhem integration technique, to outline the boundary of the InxGa1-xN/GaN alloy phase diagram. We have looked into the detailed structure of the InxGa1-xN/GaN along the Ga-rich boundary and found the superlattice structure. (日)
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(英) Research Trends (日)(読)
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(英) Current Topics in Crystal Growth Research (日)(読)
Atsushi Mori, Tomonori ItoandB Brian Laird : Superlattice structure along the phase boundary in alloy phase diagram of InGaN thin film by Monte Carlo simulation, Current Topics in Crystal Growth Research, Vol.7, (号), 39-46, Dec. 2004.
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Atsushi Mori, Tomonori ItoandB Brian Laird : Superlattice structure along the phase boundary in alloy phase diagram of InGaN thin film by Monte Carlo simulation, Current Topics in Crystal Growth Research, Vol.7, (号), 39-46, Dec. 2004.
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