『徳島大学 教育・研究者情報データベース (EDB)』---[学外] /
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[組織]=閲覧 徳島大学
REF=閲覧 Journal of Crystal Growth ([Elsevier])

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有効な情報: 69件 + 無効な情報: 10件 = 全ての情報: 79件

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閲覧 閲覧 徳島大学
閲覧 閲覧 工学部 ([徳島大学]) …(65)
閲覧 閲覧 大学院社会産業理工学研究部 ([徳島大学]/2017年4月1日〜) …(1)
閲覧 閲覧 先端技術科学教育部 ([徳島大学]/2006年4月1日〜) …(1)
閲覧 閲覧 ポストLEDフォトニクス研究所 ([徳島大学]/2019年3月1日〜) …(2)
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抽出結果のリスト

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閲覧 Akira Kojima, Sadao Hoshino, Yasunori Noda, katsuhiro Fuji and Tatsuo Kanashiro : Modified Bridgeman Growth of Centimeter-Large Single-Crystal of the Solid electrolyte AG3SI, Journal of Crystal Growth, Vol.94, (号), 293-298, 1989..[誌名] ...
閲覧 Kazumi Nishioka, Isamu Kusaka and Atsushi Mori : Interfacial Thermodynamics of Non-Critical Cluster and Homogeneoud Nucleation in Multi-Component Systems, Journal of Crystal Growth, Vol.128, No.1-4, 1157-1161, 1993..[誌名] ...
閲覧 Satoru Miyashita, Hiroshi Komatsu, Yoshihisa Suzuki and Toshitaka Nakada : Observation of the concentration distribution around a growing lysozyme crystal, Journal of Crystal Growth, Vol.141, (号), 419-424, 1994..[誌名] ...
閲覧 Yoshiki Naoi, Satoshi Kurai, Shiro Sakai, Tao Yang and Yoshihiro Shintani : Stress Distribution and Dislocation Dynamics in GaAs grown on Si by MOCVD, Journal of Crystal Growth, Vol.145, No.1-4, 321-325, 1994..[誌名] ...
閲覧 Yoshihiro Ueta, Hisao Sato, Shiro Sakai and Masuo Fukui : X-ray photoelectron spectroscopy study of GaN and GaP surfaces annealed in PH3 and NH3 and metalorganic chemical vapor deposition growth of GaN / GaP heterostructures, Journal of Crystal Growth, Vol.145, No.1-4, 203-208, 1994..[誌名] ...
閲覧 R.R. LaPierre, Tatsuya Okada, B.J. Robinson, D.A. Thompson and G.C. Weatherly : Spinodal-like decomposition of InGaAsP /(100) InP grown by gas source molecular beam epitaxy, Journal of Crystal Growth, Vol.155, No.1-2, 1-15, 1995..[誌名] ...
閲覧 R.R. LaPierre, Tatsuya Okada, B.J. Robinson, D.A. Thompson and G.C. Weatherly : Lateral composition modulation in InGaAsP strained layers and quantum wells grown on (100) InP by gas source molecular beam epitaxy, Journal of Crystal Growth, Vol.158, No.1-2, 6-14, 1996..[誌名] ...
閲覧 Kazuo Kurihara, Satoru Miyashita, Gen Sazaki, Toshitaka Nakada, Yoshihisa Suzuki and Hiroshi Komatsu : Interferometric study on the crystal growth of tetragonal lysozyme crystal, Journal of Crystal Growth, Vol.166, (号), 904-908, 1996..[誌名] ...
閲覧 Tatsuya Okada and George C Weatherly : The role of strain and composition on the morphology of InGaAsP layers grown on <001>InP substrates, Journal of Crystal Growth, Vol.179, No.3-4, 339-348, 1997..[誌名] ...
閲覧 Koji Yamaguchi, Tetsuo Inoue and Kazumi Nishioka : Growth and perfection of KCl crystals grown from aqueous solution, Journal of Crystal Growth, Vol.183, (号), 409-416, 1998..[誌名] ...
閲覧 Yoshiki Naoi, Keizo Kobatake, Satoshi Kurai, Katsushi Nishino, Hisao Sato, Ken-ichi Yamashita, Masaaki Nozaki, Shiro Sakai and Yoshihiro Shintani : Characterization of Bulk GaN Grown by Sublimation Technique, Journal of Crystal Growth, Vol.189-190, (号), 163-166, 1998..[誌名] ...
閲覧 Shiro Sakai, T.C. Cheng, T.C. Foxon, Tomoya Sugahara, Yoshiki Naoi and Hiroyuki Naoi : Growth of InNAs on GaAs(100) Substrates by Moleculer-Beam Epitaxy, Journal of Crystal Growth, Vol.189-190, (号), 471-475, 1998..[誌名] ...
閲覧 Tohru Tsuruoka, Nobuyuki Takahashi, R. Francy, Sukekatsu Ushioda, Yoshiki Naoi, Hisao Sato, Shiro Sakai and Yoshihiro Shintani : HREELS Analysis of the Vibrational and Electronic Properties of GaN Film on Sapphire(0001) Grown by Metalorganic Chemical Vapor Deposition, Journal of Crystal Growth, Vol.189-190, (号), 677-681, 1998..[誌名] ...
閲覧 Gen Sazaki, Yukiko Nagatoshi, Yoshihisa Suzuki, Stephen Duen Durbin, Satoru Miyashita, Toshitaka Nakada and Hiroshi Komatsu : Solubility of tetragonal and orthorhombic lysozyme crystals under high pressure, Journal of Crystal Growth, Vol.196, (号), 204-209, 1999..[誌名] ...
閲覧 Shin-ichiro Yanagiya, Gen Sazaki, Stephen D. Durbin, Satoru Miyashita, Toshitaka Nakada, Hiroshi Komatsu, Kazuo Watanabe and Mitsuhiro Motokawa : Effect of a magnetic field on the orientation of hen egg-white lysozyme crystals, Journal of Crystal Growth, Vol.196, No.2-4, 319-324, 1999..[誌名] ...
閲覧 Tao Wang, Mohamed Lachab, Daisuke Nakagawa, T Shirahama and Shiro Sakai : Investigation of Two Dimensional Electron Gas in AlGaN/GaN Heterostructures grown by MOCVD, Journal of Crystal Growth, Vol.203, (号), 443-446, 1999..[誌名] ...
閲覧 Jie Wang, Masaaki Nozaki, Yasuhiro Ishikawa, Maosheng Hao, Sadanori Morishima, Tao Wang, Yoshiki Naoi and Shiro Sakai : Fabrication of Nanoscale Structures of InGaN by MOCVD Lateral Overgrowth, Journal of Crystal Growth, Vol.197, No.1-2, 48-53, 1999..[誌名] ...
閲覧 Jie Wang, Masaaki Nozaki, Mohamed Lachab, Qhalid RS Fareed, Yasuhiro Ishikawa, Tao Wang, Yoshiki Naoi and Shiro Sakai : Formation and Optical Properties of InGaN/GaN Nano-structures Grown on Amorphous Si Substrates by MOCVD, Journal of Crystal Growth, Vol.200, No.1-2, 85-89, 1999..[誌名] ...
閲覧 Qhalid Fareed, Satoru Tottori, Katsushi Nishino and Shiro Sakai : Surface morphology studies on sublimation grown bulk GaN by atomic force microscopy, Journal of Crystal Growth, Vol.200, No.3-4, 348-352, 1999..[誌名] ...
閲覧 Atsushi Mori and Igor L Maksimov : On the Temkin model of solid-liquid interface, Journal of Crystal Growth, Vol.200, No.1-2, 297-304, 1999..[誌名] ...
閲覧 Kazumi Nishioka, Atsushi Mori, Kaoru J Takano, Yoshihito Kaishita and Shingo Narimatsu : Pressure-dependence of the interfacial tension of a critical nucleus in the binary-ideal-solution, Journal of Crystal Growth, Vol.200, No.3-4, 592-598, 1999..[誌名] ...
閲覧 Hong Xing Wang, Tao Wang, Mohamed Lachab, Yasuhiro Ishikawa, Maosheng Hao, Koichi Oyama, Katsushi Nishino, Shiro Sakai and Kikuo Tominaga : Growth of a GaN layer on a glass substrate by metal organic chemical vapor deposition, Journal of Crystal Growth, Vol.206, No.3, 241-244, 1999..[誌名] ...
閲覧 Qhalid Fareed, Satoru Tottori, Takeshi Inaoka, Katsushi Nishino and Shiro Sakai : Dependence of growth conditions on morphology in lateral epitaxial overgrowth of GaN by sublimation method, Journal of Crystal Growth, Vol.207, No.3, 174-178, 1999..[誌名] ...
閲覧 Yoshihisa Suzuki, Satoru Miyashita, Gen Sazaki, Toshitaka Nakada, Tsutomu Sawada and Hiroshi Komatsu : Effects of pressure on growth kinetics of tetragonal lysozyme crystals, Journal of Crystal Growth, Vol.208, No.1-4, 638-644, 2000..[誌名] ...
閲覧 Yoshihisa Suzuki, Tsutomu Sawada, Satoru Miyashita, Hiroshi Komatsu, Gen Sazaki and Toshitaka Nakada : An interferometric study of the solubility of lysozyme crystals under high pressure, Journal of Crystal Growth, Vol.209, No.4, 1018-1022, 2000..[誌名] ...
閲覧 Shin-ichiro Yanagiya, Gen Sazaki, Stephen D. Durbin, Satoru Miyashita, Kazuo Nakajima, Hiroshi Komatsu, Kazuo Watanabe and Mitsuhiro Motokawa : Effect of a magnetic field on the growth rate of tetragonal lysozyme crystals, Journal of Crystal Growth, Vol.208, No.1-4, 645-650, 2000..[誌名] ...
閲覧 Tetsuo Inoue and Kazumi NIshioka : Effects of impurity upon the habit changes in NaBrO3 crystals grown from aqueous solution, Journal of Crystal Growth, Vol.24, No.3-4, 507-511, 2000..[誌名] ...
閲覧 Tao Wang, Y Morishima, N Naoi and Shiro Sakai : A new method for a great reduction of dislocation density in a GaN layer on a sapphire substrate, Journal of Crystal Growth, Vol.213, No.1-2, 188-192, 2000..[誌名] ...
閲覧 Hong X Wang, Tao Wang, Sourindra Mahanty, F Komatsu, T Inaoka, Katsushi Nishino and Shiro Sakai : Growth of GaN layer by metallorganic vapor deposition system with a novel three-flow reactor, Journal of Crystal Growth, Vol.218, (号), 148-154, 2000..[誌名] ...
閲覧 H Naoi, D M Shaw, G J Collins and Shiro Sakai : Heteroepitaxial growth of InAs by low-pressure metalorganic chemical vapor deposition employing in situ generated arsine radicals, Journal of Crystal Growth, Vol.219, No.4, 481-484, 2000..[誌名] ...
閲覧 Nan Jiang, Susumu Kujime, I Ota, Takeshi Inaoka, Yoshihiro Shintani, Hiroshi Makita, Akimitsu Hatta and Akio Hiraki : Growth and structural analysis of nano-diamond films deposited on Si substrates pretreated by various methods, Journal of Crystal Growth, Vol.218, No.2-4, 265-271, 2000..[誌名] ...
閲覧 Shiro Sakai, Tao Wang, Y Morishima and Yoshiki Naoi : A New Method of Reducing Dislocation Density in GaN Layer Grown on Sapphire Substrate by MOVPE, Journal of Crystal Growth, Vol.221, No.1, 334-337, 2000..[誌名] ...
閲覧 Yoshihiro Kangawa, Tomonori Ito, Atsushi Mori and Akinori Koukitu : Anomalous behavior of excess energy curves of InxGa1-xN grown on GaN and InN, Journal of Crystal Growth, Vol.220, No.4, 401-404, 2000..[誌名] ...
閲覧 Tao Wang, Jie Bai and Shiro Sakai : Influence of InGaN/GaN quantum-well structure on the performance of light-emitting diodes and laser diodes grown on sapphire substrate, Journal of Crystal Growth, Vol.224, No.1/2, 5-10, 2001..[誌名] ...
閲覧 Jie Bai, Yuji Izumi, Tao Wang and Shiro Sakai : A Study of dislocations in InGaN/GaN multiple-quantum-well structure grownon (11-20) sapphire substrate, Journal of Crystal Growth, Vol.223, No.1-2, 61-68, 2001..[誌名] ...
閲覧 Hiroyuki Naoi, Denis M Shaw, Yoshiki Naoi, G J Collins and Shiro Sakai : Growth of InNAs by low-pressure metalorganic chemical vapor deposition employing microwave-cracked nitrogen and in situ generated arsine radicals, Journal of Crystal Growth, Vol.222, No.3, 511-517, 2001..[誌名] ...
閲覧 Nan Jiang, K Sugimoto, Kazuyuki Eguchi, Takeshi Inaoka, Yoshihiro Shintani, Hiroshi Makita, Akimitsu Hatta and Akio Hiraki : Reducing the grain size for fabrication of nanocrystallline diamond films, Journal of Crystal Growth, Vol.222, No.3, 591-594, 2001..[誌名] ...
閲覧 Jie Bai, Tao Wang, Hong-Dong Li, Nan Jiang and Shiro Sakai : (0001) oriented GaN epilayer grown on (11-20) sapphire by MOCVD, Journal of Crystal Growth, Vol.231, No.1-2, 41-47, 2001..[誌名] ...
閲覧 Hong X Wang, Y Amijima, Yasuhiro Ishihama and Shiro Sakai : Influence of carrier gas on the morphology and structure of GaN layers grown on sapphire substrate by six-wafer metal organic chemical vapor deposition system, Journal of Crystal Growth, Vol.233, No.4, 681-686, 2001..[誌名] ...
閲覧 Arata Natsume, Naohisa Inoue, Katuto Tanahashi and Atsushi Mori : Dependence of temperature gradient on growth rate in CZ silicon, Journal of Crystal Growth, Vol.225, No.2-4, 221-224, 2001..[誌名] ...
閲覧 Nan Jiang, S Shinjo, Takeshi Inaoka, Yoshihiro Shintani, T Ito, Hiroshi Makita, Akimitsu Hatta and Akio Hiraki : Characterization of N-doped Diamond Films by Transmission Electron Microscopy, Journal of Crystal Growth, Vol.224, No.1-2, 111-116, 2001..[誌名] ...
閲覧 Nan Jiang, Kazuyuki Eguchi, Satoshi Noguchi, Takeshi Inaoka and Yoshihiro Shintani : Structural characteristics and field electron emission properties of nano-diamond/carbon films, Journal of Crystal Growth, Vol.236, No.4, 577-582, 2002..[誌名] ...
閲覧 Hirofumi Yamamoto, Yoshiki Naoi and Yoshihiro Shintani : Growth of Diamond Films on Grooved Si Substrates, Journal of Crystal Growth, Vol.236, No.1, 176-180, 2002..[誌名] ...
閲覧 Tao Wang, Yu-Huai Liu, Young-Bae Lee, Yuji Izumi, Jin-Ping Ao, Jie Bai, Hong-Dong Li and Shiro Sakai : Fabrication of high performance of AlGaN/GaN-based UV light-emitting diodes, Journal of Crystal Growth, Vol.235, No.1, 177-182, 2002..[誌名] ...
閲覧 Hong X Wang, Y Amijima, Yasuhiro Ishihama and Shiro Sakai : The development of a novel three-flow six-wafer reactor of metal-organic chemical vapor deposition system for GaN-based structure, Journal of Crystal Growth, Vol.235, No.1, 173-176, 2002..[誌名] ...
閲覧 Masayo Sone, Tetsuo Inoue, Shin-ichiro Yanagiya and Atsushi Mori : Habit changes of NaBrO3 crystals grown from aqueous solution doped with sodium acetate, Journal of Crystal Growth, Vol.237-239, No.1, 86-89, 2002..[誌名] ...
閲覧 Katsushi Nishino, Daigo Kikuta and Shiro Sakai : Bulk GaN growth by direct synthesis method, Journal of Crystal Growth, Vol.237-239, No.0, 922-925, 2002..[誌名] ...
閲覧 Tadasuke Kamei, Tetsuo Inoue, Shin-ichiro Yanagiya and Atsushi Mori : Striations in the KCl single crystals grown from aqueous solutions, Journal of Crystal Growth, Vol.243, No.3-4, 517-521, 2002..[誌名] ...
閲覧 Hong-dong Li, Tao Wang, Nan Jiang, Yu-Huai Liu, Jie Bai and Shiro Sakai : Interaction Between Inversion Domains and InGaN/GaN Multiple Quantum Wells Investigated by Transmission Electron Microscopy, Journal of Crystal Growth, Vol.247, No.1-2, 28-34, 2003..[誌名] ...
閲覧 Hiroyuki Naoi, Denis M Shaw, Yoshiki Naoi, Shiro Sakai and G Collins : Growth of InAs on GaAs(100) by Low-Pressure Metalorganic Chemical Vapor Deposition Employing in situ Generated Arsine Radicals, Journal of Crystal Growth, Vol.250, No.3-4, 290-297, 2003..[誌名] ...
閲覧 Yukiko Nagatoshi, Gen Sazaki, Yoshihisa Suzuki, Satoru Miyashita, Takuro Matsui, Toru Ujihara, Kozo Fujiwara, Noritaka Usami and Kazuo Nakajima : Effects of high pressure on the growth kinetics of orthorhombic lysozyme crystals, Journal of Crystal Growth, Vol.254, No.1, 188-195, 2003..[誌名] ...
閲覧 Shin-ichiro Yanagiya, Susumu Nishikata, Gen Sazaki, Akitaka Hoshino, Kazuo Nakajima and Tetsuo Inoue : Recrystallization of Cu-phthalocyanine on KCl (0 0 1) substrates by annealing method, Journal of Crystal Growth, Vol.254, No.1-2, 244-250, 2003..[誌名] ...
閲覧 Katsuhiko Ooshita, Tetsuo Inoue, Takashi Sekiguchi, Shin-ichiro Yanagiya and Atsushi Mori : Flux growth of ZnS single crystals and their characterization, Journal of Crystal Growth, Vol.267, No.1-2, 74-79, 2004..[誌名] ...
閲覧 Tao Wang, J P Parbrook, N C Harrison, Jin-Ping Ao and Yasuo Ohno : Highly improved performance of a 350nm ultraviolet light-emitting diode containing AlxGa1-xN/AlyGa1-yN distributed Bragg reflectors, Journal of Crystal Growth, Vol.267, No.3-4, 583-587, 2004..[誌名] ...
閲覧 Yu-Huai Liu, Hong-Dong Li, Jin-Ping Ao, Young-Bae Lee, Tao Wang and Shiro Sakai : Influence of undoped GaN layer thickness to the performance of AlGaN/GaN-based ultraviolet light-emitting diodes, Journal of Crystal Growth, Vol.268, No.1-2, 30-34, 2004..[誌名] ...
閲覧 Takamasa Kaito, Tetsuo Inoue, Shin-ichiro Yanagiya and Atsushi Mori : Melt Growth and Characterization of PbBr2 Single Crystals, Journal of Crystal Growth, Vol.275, No.1-2, e721-e726, 2005..[誌名] ...
閲覧 Shin-ichiro Yanagiya, Hironori Wakamatsu, Osamu Nishikata, Atsushi Mori and Tetsuo Inoue : Growth of copper-phthalocyanine nano-crystallite epitaxially grown on KCl(001) substrate, Journal of Crystal Growth, Vol.275, No.1-2, e1993-e1996, 2005..[誌名] ...
閲覧 Hiroaki Kusumoto, Takamasa Kaito, Shin-ichiro Yanagiya, Atsushi Mori and Tetsuo Inoue : Growth of single crystals of PbBr2 in silica gel, Journal of Crystal Growth, Vol.277, No.1-4, 536-540, 2005..[誌名] ...
閲覧 Fawang Yan, Yoshiki Naoi, Masashi Tsukihara, Takayuki Yadani and Shiro Sakai : Interdiffusion induced In(Ga)NAs films growth on GaAs substrates by low-pressure metalorganic chemical vapor deposition, Journal of Crystal Growth, Vol.282, No.1-2, 29-35, 2005..[誌名] ...
閲覧 Takamasa Kaito, Shin-ichiro Yanagiya, Atsushi Mori, Mami Kurumada, Chihiro Kaito and Tetsuo Inoue : Effects of magnetic field on the gel growth of PbBr2, Journal of Crystal Growth, Vol.289, No.1, 275-277, 2006..[誌名] ...
閲覧 Takamasa Kaito, Shin-ichiro Yanagiya, Atsushi Mori, Mami Kurumada, Chihiro Kaito and Tetsuo Inoue : Characteristic nanocrystallite growth of PbBr2 in a magnetic field in gel, Journal of Crystal Growth, Vol.294, No.2, 407-410, 2006..[誌名] ...
閲覧 M Tsukihara, K Sumiyoshi, T Okimoto, K Kataoka, S Kawamichi, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai : Effect of middletemperature intermediate layer on crystal quality of AlGaN grown on sapphire substrates by metal organic chemical vapor deposition, Journal of Crystal Growth, Vol.300, No.1, 190-193, 2007..[誌名] ...
閲覧 Ryo Matsuoka, Takashi Okimoto, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai : AlGaN epitaxial lateral overgrowth on Ti-evaporated GaN/sapphire substrate, Journal of Crystal Growth, Vol.311, No.10, 2847-2849, 2009..[誌名] ...
閲覧 Shin-ichiro Yanagiya and Nobuo Goto : Hybrid observation of crystal growth using laser confocal microscope with atomic force microscope, Journal of Crystal Growth, Vol.312, No.22, 3356-3360, 2010..[誌名] ...
閲覧 Takahisa Fujiwara, Yoshihisa Suzuki and Katsuhiro Tamura : Solubility measurements by in situ observation of the apex region formed by the (110), (1-10) and (101) faces of tetragonal lysozyme crystals, Journal of Crystal Growth, Vol.334, No.1, 134-137, 2011..[誌名] ...
閲覧 Sho Kawakami, Atsushi Mori, Ken Nagashima, Masanobu Haraguchi and Toshihiro Okamoto : Hybrid plasmonic-photonic crystal formed on gel-immobilized colloidal crystal via solvent substitution, Journal of Crystal Growth, Vol.468, No.1, 740-743, 2017..[誌名] ...
閲覧 Xiangmeng Lu, Yasuo Minami and Takahiro Kitada : Sublattice reversal in GaAs/Ge/GaAs and AlAs/Ge/AlAs heterostructures grown on (113)A and (113)B GaAs substrates, Journal of Crystal Growth, Vol.512, (号), 74-77, 2019..[誌名] ...
閲覧 Kentaro Nagamatsu, Y. Ando, T. Kono, H. Cheong, S. Nitta, Y. Honda, M. Pristovsek and H. Amano : Effect of substrate misorientation on the concentration of impurities and surface morphology of an epitaxial GaN layer on N-polar GaN substrate by MOVPE, Journal of Crystal Growth, Vol.512, (号), 78-83, 2019..[誌名] ...
閲覧 Z. Ye, S. Nitta, Kentaro Nagamatsu, N. Fujimoto, M. Kushimoto, M. Deki, A. Tanaka, Y. Honda, M. Pristovsek and H. Amano : Ammonia decomposition and reaction by high-resolution mass spectrometry for group III Nitride epitaxial growth, Journal of Crystal Growth, Vol.516, (号), 63-66, 2019..[誌名] ...

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