『徳島大学 教育・研究者情報データベース (EDB)』---[学外] /
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[組織]=閲覧 徳島大学
PERM=閲覧 西野 克志 ([徳島大学.大学院社会産業理工学研究部.理工学域.電気電子系.物性デバイス分野]/[徳島大学.理工学部.理工学科.電気電子システムコース.物性デバイス講座])

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有効な情報: 45件 + 無効な情報: 1件 = 全ての情報: 46件

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閲覧 閲覧 徳島大学
閲覧 閲覧 工学部 ([徳島大学]) …(39)
閲覧 閲覧 大学院社会産業理工学研究部 ([徳島大学]/2017年4月1日〜) …(1)
閲覧 閲覧 先端技術科学教育部 ([徳島大学]/2006年4月1日〜) …(5)
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閲覧 Tatsuya Okada, Satoshi Kurai, Yoshiki Naoi, Katsushi Nishino, Fukuji Inoko and Shiro Sakai : Transmission Electron Microscopy of Sublimation-Grown GaN Single Crystal and GaN Homoepitaxial Film, Japanese Journal of Applied Physics, Part 2 (Letters), Vol.35, No.10, 1318-1320, 1996..[著者] ...
閲覧 Satoshi Kurai, Katsushi Nishino and Shiro Sakai : Nucleation Control in the Growth of Bulk GaN by Sublimation Method, Japanese Journal of Applied Physics, Part 2 (Letters), Vol.36, No.2B, 184-186, 1997..[著者] ...
閲覧 Shiro Sakai, Satoshi Kurai, Katsushi Nishino, K Wada, Hisao Sato and Yoshiki Naoi : Growth of GaN by Sublimation Technique and Homoepitaxial Growth by MOCVD, Material Research Society Symposium Proc., Vol.449, (号), 15-22, 1997..[著者] ...
閲覧 Hisao Sato, Tomoya Sugahara, Maosheng Hao, Yoshiki Naoi, Satoshi Kurai, Ken-ichi Yamashita, Katsushi Nishino and Shiro Sakai : Surface Pretreatment of Bulk GaN for Homoepitaxial Growth by Metalorganic Chemical Vapor Deposition, Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.37, No.2, 621-631, 1998..[著者] ...
閲覧 Tomoya Sugahara, Hisao Sato, Maosheng Hao, Yoshiki Naoi, Satoshi Kurai, Satoru Tottori, Kenji Yamashita, Katsushi Nishino, Katsushi Nishino and Shiro Sakai : Direct Evidence that Dislocations are Non-radiative Recombination Centers in GaN, Japanese Journal of Applied Physics, Part 2 (Letters), Vol.37, No.4A, L398-L400, 1998..[著者]+[著者] ...
閲覧 Shiro Sakai, Hisao Sato, Tomoya Sugahara, Yoshiki Naoi, Satoshi Kurai, Ken-ichi Yamashita, Satoru Tottori, Maosheng Hao, Koichi Wada and Katsushi Nishino : Growth of Bulk GaN Sublimation Method, Materials Science Forum, Vol.264-268, No.PT2, 1107-1110, 1998..[著者] ...
閲覧 西野 克志, 酒井 士郎 : 昇華法によるGaN単結晶育成, 日本結晶成長学会誌, Vol.25, No.4, 19-24, 1998年4月..[著者] ...
閲覧 Yoshiki Naoi, Keizo Kobatake, Satoshi Kurai, Katsushi Nishino, Hisao Sato, Ken-ichi Yamashita, Masaaki Nozaki, Shiro Sakai and Yoshihiro Shintani : Characterization of Bulk GaN Grown by Sublimation Technique, Journal of Crystal Growth, Vol.189-190, (号), 163-166, 1998..[著者] ...
閲覧 Maosheng Hao, Tomoya Sugahara, Satoru Tottori, Masaaki Nozaki, Satoshi Kurai, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai : Correlation between Dislocations and Luminescence in GaN, Proceedings of SPIE, Vol.3419, (号), 138-145, Taipei, July 1998..[著者] ...
閲覧 Tomoya Sugahara, Maosheng Hao, Tao Wang, Daisuke Nakagawa, Yoshiki Naoi, Katsushi Nishino and Shiro Sakai : Role of Dislocation in InGaN Phase Separation, Japanese Journal of Applied Physics, Part 2 (Letters), Vol.37, No.10B, L1195-L1198, 1998..[著者] ...
閲覧 Maosheng Hao, Sourindra Mahanty, Y Morishima, Hironori Takenaka, Jie Wang, Satoru Tottori, Masaaki Nozaki, Yasuhiro Ishikawa, Tomoya Sugahara, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai : Stacking Fault and Its Effect on the GaN Epitaxial Growth, Proceedings of the Twenty-Fifth International Symposium on Compound Semiconductors, Vol.xxvi+892, (号), 675-680, Nara, Jan. 1999..[著者] ...
閲覧 Jie Wang, Qhalid RS Fareed, Sourindra Mahanty, Satoru Tottori, Yasuhiro Ishikawa, Tomoya Sugahara, Y Morishima, Katsushi Nishino, Marek Osinski and Shiro Sakai : Lateral overgrowth mechanisms and microstructural characteristics of bulk-like GaN layers grown by sublimation method structures Substrates, Journal of Applied Physics, Vol.85, No.3, 1895-1899, 1999..[著者] ...
閲覧 Durga Basak, Kenji Yamashita, Tomoya Sugahara, Daisuke Nakagawa, Qhalid RS Fareed, Katsushi Nishino and Shiro Sakai : Selective etching of GaN over AlxGa1-xN using Reactive Ion Plasma of Cl2/CH4/Ar gas Mixture, Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.38, No.1A, 42-43, 1999..[著者] ...
閲覧 Qhalid Fareed, Satoru Tottori, Katsushi Nishino and Shiro Sakai : Surface morphology studies on sublimation grown bulk GaN by atomic force microscopy, Journal of Crystal Growth, Vol.200, No.3-4, 348-352, 1999..[著者] ...
閲覧 Durga Basak, Kenji Yamashita, Tomoya Sugahara, Qhalid Fareed, Daisuke Nakagawa, Katsushi Nishino and Shiro Sakai : Reactive ion etching of GaN and AlxGa1-xN using Cl2/CH4/Ar plasma, Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.38, No.4B, 2646-2651, 1999..[著者] ...
閲覧 Maosheng Hao, Sourindra Mahanty, Tomoya Sugahara, Sadanori Morishima, Yusuke Takenaka, Tao Wang, Satoru Tottori, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai : Configuration of Dislocations in Lateral Overgrowth GaN Films, Journal of Applied Physics, Vol.85, No.9, 6497-6501, 1999..[著者] ...
閲覧 Maosheng Hao, Sourindra Mahanty, Qhalid Fareed, Satoru Tottori, Katsushi Nishino and Shiro Sakai : Infrared properties of bulk GaN, Applied Physics Letters, Vol.74, No.19, 2788-2790, 1999..[著者] ...
閲覧 Yoichi Yamada, Chiharu Sasaki, Yohei Yoshida, Satoshi Kurai, Tsunemasa Taguchi, Tomoya Sugahara, Katsushi Nishino and Shiro Sakai : Magneto-luminescence spectroscopy of excitonic transitions in homoepitaxial GaN layers, Physica Status Solidi (B) Basic Solid State Physics : PSS, Vol.216, No.1, 27-30, 1999..[著者] ...
閲覧 Hong Xing Wang, Tao Wang, Mohamed Lachab, Yasuhiro Ishikawa, Maosheng Hao, Koichi Oyama, Katsushi Nishino, Shiro Sakai and Kikuo Tominaga : Growth of a GaN layer on a glass substrate by metal organic chemical vapor deposition, Journal of Crystal Growth, Vol.206, No.3, 241-244, 1999..[著者] ...
閲覧 Qhalid Fareed, Satoru Tottori, Takeshi Inaoka, Katsushi Nishino and Shiro Sakai : Dependence of growth conditions on morphology in lateral epitaxial overgrowth of GaN by sublimation method, Journal of Crystal Growth, Vol.207, No.3, 174-178, 1999..[著者] ...
閲覧 Yoichi Yamada, Chiharu Sasaki, Satoshi Kurai, Tsunemasa Taguchi, Tomoya Sugahara, Katsushi Nishino and Shiro Sakai : Time-resolved spectroscopy of excitonic luminescence from GaN homoepitaxial layers, Journal of Applied Physics, Vol.86, No.12, 7186-7188, 1999..[著者] ...
閲覧 Hong X Wang, Tao Wang, Sourindra Mahanty, F Komatsu, T Inaoka, Katsushi Nishino and Shiro Sakai : Growth of GaN layer by metallorganic vapor deposition system with a novel three-flow reactor, Journal of Crystal Growth, Vol.218, (号), 148-154, 2000..[著者] ...
閲覧 Durga Basak, Katsushi Nishino, Qhalid RS Fareed and Shiro Sakai : Characterization of RIE etched surface of GaN using methane gas with chlorine plasma, Journal of Vacuum Science & Technology B, Vol.18, No.5, 2491-2494, 2000..[著者] ...
閲覧 Mohamed Lachab, Masaaki Nozaki, Jie Wang, Yasuhiro Ishikawa, Qhalid Fareed, Tao Wang, Tatsunori Nishikawa, Katsushi Nishino and Shiro Sakai : Selective fabrication of InGaN nanostructures by the focused ion beam/metalorganic chemical vapor deposition process, Journal of Applied Physics, Vol.87, No.3, 1374-1378, 2000..[著者] ...
閲覧 Yoichi Yamada, Chiharu Sasaki, Yohei Yoshida, Satoshi Kurai, Tsunemasa Taguchi, Tomoya Sugahara, Katsushi Nishino and Shiro Sakai : Optical properties of bound excitons and biexcitons in GaN, IEICE Transactions on Electronics, Vol.E83-C, No.4, 605-611, 2000..[著者] ...
閲覧 Sung Hoon Chung, Mohamed Lachab, Tao Wang, Yves Lacroix, Durga Basak, Qhalid Fareed, Yoshihisa Kawakami, Katsushi Nishino and Shiro Sakai : Effect of Oxygen on the Activation of Mg Acceptor in GaN Epilayers Grown by Metalorganic Chemical Vapor Deposition, Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.39, No.8, 4749-4750, 2000..[著者] ...
閲覧 Katsushi Nishino, Daigo Kikuta and Shiro Sakai : Bulk GaN growth by direct synthesis method, Journal of Crystal Growth, Vol.237-239, No.0, 922-925, 2002..[著者] ...
閲覧 Young-Bae Lee, Tao Wang, Yu-Huai Liu, Jin-Ping Ao, Hong-Dong Li, Hisao Sato, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai : Fabrication of high-output-power AlGaN/GaN-based UV-light-emitting diode using a Ga droplet layer, Japanese Journal of Applied Physics, Part 2 (Letters), Vol.41, No.10A, L1037-L1039, 2002..[著者] ...
閲覧 Takashi Okimoto, Masashi Tsukihara, Kazuhide Sumiyoshi, Ken Kataoka, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai : Effect of GaNP Buffer Layer on AlGaN Epilayers Deposited on (0001) Sapphire Substrates by Metalorganic Chemical Vapor Deposition, Japanese Journal of Applied Physics, Part 2 (Letters), Vol.45, No.8, L236-L238, 2006..[著者] ...
閲覧 Fawang Yan, Katsushi Nishino and Shiro Sakai : Growth and Characteristics of GaN Film on Thin AlN/(0001) Sapphire Template Layer via Direct Reaction of Gallium and Ammonia, Japanese Journal of Applied Physics, Part 2 (Letters), Vol.45, No.27, L697-L700, 2006..[著者] ...
閲覧 M Tsukihara, K Sumiyoshi, T Okimoto, K Kataoka, S Kawamichi, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai : Effect of middletemperature intermediate layer on crystal quality of AlGaN grown on sapphire substrates by metal organic chemical vapor deposition, Journal of Crystal Growth, Vol.300, No.1, 190-193, 2007..[著者] ...
閲覧 松岡 遼, 沖本 聖, 西野 克志, 直井 美貴, 酒井 士郎 : 金属蒸着膜を使ったAlGaN on GaN/Sapphireの選択MOCVD成長, 2008年(平成20年)春季第55回応用物理学会連合講演会, 29p-B-18, 2008年3月..[著者] ...
閲覧 Ryo Matsuoka, Takashi Okimoto, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai : AlGaN epitaxial lateral overgrowth on Ti-evaporated GaN/sapphire substrate, Second International Symposium on Growth of III-Nitrides, MO-44, Izu, July 2008..[著者] ...
閲覧 松岡 遼, 西野 克志, 直井 美貴, 酒井 士郎 : ストライプ状金属蒸着膜を使ったAlGaN on GaN/Sapphireの選択MOCVD成長, 2008年(平成20年)秋季第69回応用物理学会学術講演会, 2a-CA-8, 2008年9月..[著者] ...
閲覧 加藤 篤, 西野 克志, 直井 美貴, 酒井 士郎 : SiO2 を斜め蒸着した凹凸GaN テンプレート上へのGaN成長, 平成20年度電気関係学会四国支部連合大会, 11-1, 2008年9月..[著者] ...
閲覧 結城 勇介, 西野 克志, 直井 美貴, 酒井 士郎 : 直接合成法を用いたa 面GaN 結晶成長のためのNH3 流量の検討, 平成20年度電気関係学会四国支部連合大会, 11-2, 2008年9月..[著者] ...
閲覧 Ryo Matsuoka, Takashi Okimoto, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai : AlGaN epitaxial lateral overgrowth on Ti-evaporated GaN/sapphire substrate, Journal of Crystal Growth, Vol.311, No.10, 2847-2849, 2009..[著者] ...
閲覧 西野 克志, 直井 美貴 : 電気電子工学科基礎科目における再履修生を対象とした授業の試み, 工学教育シンポジウム2010(SEE2010), 2010年3月..[著者] ...
閲覧 Yuji Nariyuki, Masakazu Matsumot, Takeshi Noda, Katsushi Nishino, Yoshiki Naoi, Shiro Sakai, Atsuyuki Fukano and Satoru Tanaka : Evaluation and re-growth of p-GaN on nano-patterned GaN on sapphire substrate, Physica Status Solidi (C) Current Topics in Solid State Physics, Vol.7, No.7-8, 2121-2123, 2010..[著者] ...
閲覧 加藤 保洋, 中内 潤, 西野 克志, 月原 政志, 酒井 士郎 : 昇華法によるバルクAlNの成長, 電気関係学会四国支部連合大会講演論文集, 11-3, 2010年9月..[著者] ...
閲覧 林 浩太郎, 中内 潤, 西野 克志, 月原 政志 : AlSiN層を用いた昇華法成長AlNの剥離, 第73回応用物理学会学術講演会, 12a-PB4-4, 2012年9月..[著者] ...
閲覧 YUICHI HIWASA, SHOTA IWAMOTO, KOTARO HAYASHI, Katsushi Nishino and MASASHI TSUKIHARA : Self-separation of sublimation-grown AlN on rough SiC substrate, 5th International Symposium on Advanced Plasma Science and its Application for Nitrides and Nanomaterials, (都市), Jan. 2013..[著者] ...
閲覧 Ryo Hiramura and Katsushi Nishino : Crystal Growth of Gallium Oxide by Direct Synthesis Method, 4th International Forum on Advanced Technologies, (巻), (号), (頁), Tokushima, March 2018..[著者] ...
閲覧 Takaya Shimada and Katsushi Nishino : Characterization of dislocations in sublimation-grown AlN crystals, 4th International Forum on Advanced Technologies, (巻), (号), (頁), Tokushima, March 2018..[著者] ...
閲覧 Yuki Naito, Souma Nishio and Katsushi Nishino : Vacuum Evaporation of BaSi2 Thin Films on Textured Si (100) Substrates, The 5th Asia-Pacific Conference on Semiconducting Silicides and Related Materials, 2019, Miyazaki, July 2019..[著者]+[指導教員] ...

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