『徳島大学 教育・研究者情報データベース (EDB)』---[学外] /
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REF=閲覧 Journal of Crystal Growth ([Elsevier])

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有効な情報: 25件 + 無効な情報: 5件 = 全ての情報: 30件

全ての有効な情報 (25件)
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閲覧 Takahiro Kitada, A. Wakejima, N. Tomita, S. Shimomura, A. Adachi, N. Sano and S. Hiyamizu : Preferential migration of indium atoms on the (411)A plane in InGaAs grown on GaAs channeled substrates by molecular beam epitaxy, Journal of Crystal Growth, Vol.150, (号), 487-491, 1995..[誌名] ...
閲覧 Naoto Kumagai, Hyundon Jung, Takashi Hanada, Z. Zhu, Tetsuji Yasuda, K Kimura, D. S. Lee, H. M. Jeon, S. H. Park, I. T. Kim and Takafumi Yao : Non-destructive measurement of electron concentration in n-ZnSe by means of reflectance difference spectroscopy, Journal of Crystal Growth, Vol.184-185, 505-509, 1998..[誌名] ...
閲覧 Hyundon Jung, Naoto Kumagai, Takashi Hanada, E Kurtz, Z Zhu and Takafumi Yao : Investigation of the surfactant effect of Sn in ZnSe by reflectance difference spectroscopy and reflection high-energy electron diffraction, Journal of Crystal Growth, Vol.184-185, 223-227, 1998..[誌名] ...
閲覧 Naoto Kumagai, Tetsuji Yasuda, Takashi Hanada and Takafumi Yao : In situ measurement of carrier concentration in n-ZnSe by reflectance difference spectroscopy (RDS), Journal of Crystal Growth, Vol.214-215, 547-550, 2000..[誌名] ...
閲覧 Yasuaki Tatsuoka, Masaya Uemura, Takahiro Kitada, Satoshi Shimomura and Satoshi Hiyamizu : Substrate temperature dependence of surface migration of As atoms during molecular beam epitaxy of GaAsP on a (411)A GaAs substrate, Journal of Crystal Growth, Vol.227-228, (号), 266-270, 2001..[誌名] ...
閲覧 Satoshi Shimomura, Yoshiaki Kitano, Hidehiko Kuge, Takahiro Kitada, Kazuo Nakajima and Satoshi Hiyamizu : Lattice-matched InxGa1-xAs/InxAl1-xAs quantum wells (x = 0.18 and 0.19) grown on (411)A- and (100)-oriented InGaAs ternary substrates by molecular beam epitaxy, Journal of Crystal Growth, Vol.227-228, (号), 72-76, 2001..[誌名] ...
閲覧 Takahiro Kitada, Toyohiro Aoki, Issei Watanabe, Satoshi Shimomura and Satoshi Hiyamizu : Optimized channel thickness for high electron mobility in pseudomorphic In0.74Ga0.26As/In0.52Al0.48As quantum-well HEMT structures with (411)A super-flat interfaces grown by MBE, Journal of Crystal Growth, Vol.227-228, (号), 289-293, 2001..[誌名] ...
閲覧 Issei Watanabe, Kenji Kanzaki, Takahiro Kitada, Masashi Yamamoto, Satoshi Shimomura and Satoshi Hiyamizu : Characterization of interface roughness scattering of electrons in an In0.53Ga0.47As/In0.52Al0.48As QW-HEMT structure with (411)A super-flat interfaces, Journal of Crystal Growth, Vol.251, (号), 90-95, 2003..[誌名] ...
閲覧 Yu Higuchi, Masaya Uemura, Yuji Masui, Takahiro Kitada, Satoshi Shimomura and Satoshi Hiyamizu : V/III ratio dependence of surface migration length of As4 molecules during molecular beam epitaxy of GaAsP on (411)A GaAs substrates, Journal of Crystal Growth, Vol.251, No.1-4, 80-84, 2003..[誌名] ...
閲覧 K. Kumar, K. Ramamoorthy, Pankaj M. Koinkar, R. Chandramohan and S. Sankaranarayanan : A Novel In Situ Synthesis and Growth of ZnAl2O4 Thin Films, Journal of Crystal Growth, Vol.289, No.1, 405-407, 2006..[誌名] ...
閲覧 Shuichi Kawamichi, Katsushi Nishino, Kazuhide Sumiyoshi, Masashi Tsukihara, Fanwang Yan and Shiro Sakai : Inversion domain in AlGaN films grown on patterned sapphire substrate, Journal of Crystal Growth, Vol.298, (号), 297-299, 2007..[誌名] ...
閲覧 Kazuhide Sumiyoshi, Masashi Tsukihara, Ken Kataoka, Shuichi Kawamichi, Tadashi Okimoto, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai : Al0.17Ga0.83N film with Middle Temperature Intermediate Layer Grown on Trenched Sapphire Substrate by MOCVD, Journal of Crystal Growth, Vol.298, No.SI, 300-304, 2007..[誌名] ...
閲覧 Naoto Kumagai, K. Watanabe, Y. Nakata and Yasuhiko Arakawa : Optical properties of p-type modulation-doped InAs quantum dot structures grown by molecular beam epitaxy, Journal of Crystal Growth, Vol.301-302, 805-808, 2007..[誌名] ...
閲覧 Kentaro Nagamatsu, N. Okada, Kunihiko Sugimura, Shyouzo Tsuzuki, F. Mori, K. Iida, A. Bando, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki : High-efficiency AlGaN-based UV light-emitting diode on laterally overgrown AlN, Journal of Crystal Growth, Vol.310, No.7-9, 2326-2329, 2008..[誌名] ...
閲覧 Takahiro Kasai, K. Nagata, T. Mori, Kentaro Nagamatsu, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki : Relaxation and recovery processes of AlxGa1-xN grown on AlN underlying layer, Journal of Crystal Growth, Vol.311, No.10, 2850-2852, 2009..[誌名] ...
閲覧 Takahiro Kitada, Takuya Mukai, Tomoya Takahashi, Ken Morita and Toshiro Isu : Fast carrier relaxation of self-assembled InAs quantum dots embedded in strain-relaxed In0.35Ga0.65As barriers for ultrafast nonlinear optical switching applications, Journal of Crystal Growth, Vol.311, No.7, 1807-1810, 2009..[誌名] ...
閲覧 Xiangmeng Lu, Y. Izumi, M. Koyama, Y. Nakata, S. Adachi and S. Muto : Effects of growth conditions on the size and density of self-assembled InAlAs/AlGaAs quantum dots grown on GaAs by molecular beam epitaxy, Journal of Crystal Growth, Vol.322, No.1, 6-9, 2011..[誌名] ...
閲覧 Shunsuke Ohkouchi, Naoto Kumagai, Masayuki Shirane, Yuichi Igarashi, Masahiro Nomura, Yasutomo Ota, Shinichi Yorozu, Satoshi Iwamoto and Yasuhiko Arakawa : New method to isolate and distribute photoluminescence emissions from InAs quantum dots over a wide-wavelength range, Journal of Crystal Growth, Vol.323, No.1, 250-253, 2011..[誌名] ...
閲覧 Naoto Kumagai, Shunsuke Ohkouchi, Katsuyuki Watanabe, Satoshi Iwamoto and Yasuhiko Arakawa : Rim formation on non-elongated InAs quantum dots grown by partial cap and annealing process at low temperature, Journal of Crystal Growth, Vol.378, 558-561, 2013..[誌名] ...
閲覧 Shunsuke Ohkouchi, Naoto Kumagai, Katsuyuki Watanabe, Satoshi Iwamoto and Yasuhiko Arakawa : Shape evolution of low density InAs quantum dots in the partial capping process by using As2 source, Journal of Crystal Growth, Vol.378, 549-552, 2013..[誌名] ...
閲覧 O1. Barry, A. Tanaka, Kentaro Nagamatsu, S. Bae, K. Lekhal, J. Matsushita, M. Deki, S. Nitta, Y. Honda and H. Amano : Effect of V/III ratio on the surface morphology and electrical properties of m-plane (1010) GaN homoepitaxial layers, Journal of Crystal Growth, Vol.468, (号), 552-556, 2017..[誌名] ...
閲覧 X. Yang, S. Nitta, Kentaro Nagamatsu, S. Bae, H. Lee, Y. Liu, M. Pristovsek, Y. Honda and H. Amano : Growth of hexagonal boron nitride on sapphire substrate by pulsed-mode metal-organic vapor phase epitaxy, Journal of Crystal Growth, Vol.482, (号), 1-8, 2018..[誌名] ...
閲覧 K. Uesugi, Y. Hayashi, K. Shojiki, S. Xiao, Kentaro Nagamatsu, H. Yoshida and H. Miyake : Fabrication of AlN templates on SiC substrates by sputtering-deposition and high-temperature annealing, Journal of Crystal Growth, Vol.510, (号), 13-17, 2019..[誌名] ...
閲覧 Caiping Wan, Hengyu Xu, Jinghua Xia and Jin-Ping Ao : Ultrahigh-temperature oxidation of 4H-SiC (0001) and gate oxide reliability dependence on oxidation temperature, Journal of Crystal Growth, Vol.530, 125250-1-125250-4, 2020..[誌名] ...
閲覧 Taofei Pu, Xiaobo Li, Taowei Peng, Tian Xie, Liuan Li and Jin-Ping Ao : Influence of metal-insulator-semiconductor gate structure on normally-off P-GaN heterojunction field effect transistors, Journal of Crystal Growth, Vol.532, 125395-1-125395-5, 2020..[誌名] ...

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