『徳島大学 教育・研究者情報データベース (EDB)』---[学外] /
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有効な情報: 115件 + 無効な情報: 16件 = 全ての情報: 131件

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閲覧 閲覧 徳島大学 …(70)
閲覧 閲覧 大阪府立大学 …(1)
閲覧 閲覧 学習院大学 …(1)
閲覧 閲覧 筑波大学 …(1)
閲覧 閲覧 東京農工大学 …(1)
閲覧 閲覧 東北大学 …(1)
閲覧 閲覧 徳島大学 …(70)
閲覧 閲覧 日本結晶学会 …(1)
閲覧 閲覧 日本結晶成長学会 …(2)
閲覧 閲覧 日本物理学会 …(4)
閲覧 閲覧 北海道大学 …(1)
閲覧 閲覧 三重大学 …(1)
閲覧 閲覧 立命館大学 …(2)
閲覧 閲覧 American Physical Society …(2)
閲覧 (未定義) …(25)
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閲覧 Akira Kojima, Sadao Hoshino, Yasunori Noda, katsuhiro Fuji and Tatsuo Kanashiro : Modified Bridgeman Growth of Centimeter-Large Single-Crystal of the Solid electrolyte AG3SI, Journal of Crystal Growth, Vol.94, (号), 293-298, 1989..[誌名] ...
閲覧 Kazumi Nishioka, Isamu Kusaka and Atsushi Mori : Interfacial Thermodynamics of Non-Critical Cluster and Homogeneoud Nucleation in Multi-Component Systems, Journal of Crystal Growth, Vol.128, No.1-4, 1157-1161, 1993..[誌名] ...
閲覧 Satoru Miyashita, Hiroshi Komatsu, Yoshihisa Suzuki and Toshitaka Nakada : Observation of the concentration distribution around a growing lysozyme crystal, Journal of Crystal Growth, Vol.141, (号), 419-424, 1994..[誌名] ...
閲覧 Yoshiki Naoi, Satoshi Kurai, Shiro Sakai, Tao Yang and Yoshihiro Shintani : Stress Distribution and Dislocation Dynamics in GaAs grown on Si by MOCVD, Journal of Crystal Growth, Vol.145, No.1-4, 321-325, 1994..[誌名] ...
閲覧 Yoshihiro Ueta, Hisao Sato, Shiro Sakai and Masuo Fukui : X-ray photoelectron spectroscopy study of GaN and GaP surfaces annealed in PH3 and NH3 and metalorganic chemical vapor deposition growth of GaN / GaP heterostructures, Journal of Crystal Growth, Vol.145, No.1-4, 203-208, 1994..[誌名] ...
閲覧 Takahiro Kitada, A. Wakejima, N. Tomita, S. Shimomura, A. Adachi, N. Sano and S. Hiyamizu : Preferential migration of indium atoms on the (411)A plane in InGaAs grown on GaAs channeled substrates by molecular beam epitaxy, Journal of Crystal Growth, Vol.150, (号), 487-491, 1995..[誌名] ...
閲覧 R.R. LaPierre, Tatsuya Okada, B.J. Robinson, D.A. Thompson and G.C. Weatherly : Spinodal-like decomposition of InGaAsP /(100) InP grown by gas source molecular beam epitaxy, Journal of Crystal Growth, Vol.155, No.1-2, 1-15, 1995..[誌名] ...
閲覧 R.R. LaPierre, Tatsuya Okada, B.J. Robinson, D.A. Thompson and G.C. Weatherly : Lateral composition modulation in InGaAsP strained layers and quantum wells grown on (100) InP by gas source molecular beam epitaxy, Journal of Crystal Growth, Vol.158, No.1-2, 6-14, 1996..[誌名] ...
閲覧 Kazuo Kurihara, Satoru Miyashita, Gen Sazaki, Toshitaka Nakada, Yoshihisa Suzuki and Hiroshi Komatsu : Interferometric study on the crystal growth of tetragonal lysozyme crystal, Journal of Crystal Growth, Vol.166, (号), 904-908, 1996..[誌名] ...
閲覧 Tatsuya Okada and George C Weatherly : The role of strain and composition on the morphology of InGaAsP layers grown on <001>InP substrates, Journal of Crystal Growth, Vol.179, No.3-4, 339-348, 1997..[誌名] ...
閲覧 Koji Yamaguchi, Tetsuo Inoue and Kazumi Nishioka : Growth and perfection of KCl crystals grown from aqueous solution, Journal of Crystal Growth, Vol.183, (号), 409-416, 1998..[誌名] ...
閲覧 Naoto Kumagai, Hyundon Jung, Takashi Hanada, Z. Zhu, Tetsuji Yasuda, K Kimura, D. S. Lee, H. M. Jeon, S. H. Park, I. T. Kim and Takafumi Yao : Non-destructive measurement of electron concentration in n-ZnSe by means of reflectance difference spectroscopy, Journal of Crystal Growth, Vol.184-185, 505-509, 1998..[誌名] ...
閲覧 Hyundon Jung, Naoto Kumagai, Takashi Hanada, E Kurtz, Z Zhu and Takafumi Yao : Investigation of the surfactant effect of Sn in ZnSe by reflectance difference spectroscopy and reflection high-energy electron diffraction, Journal of Crystal Growth, Vol.184-185, 223-227, 1998..[誌名] ...
閲覧 Yoshiki Naoi, Keizo Kobatake, Satoshi Kurai, Katsushi Nishino, Hisao Sato, Ken-ichi Yamashita, Masaaki Nozaki, Shiro Sakai and Yoshihiro Shintani : Characterization of Bulk GaN Grown by Sublimation Technique, Journal of Crystal Growth, Vol.189-190, (号), 163-166, 1998..[誌名] ...
閲覧 Shiro Sakai, T.C. Cheng, T.C. Foxon, Tomoya Sugahara, Yoshiki Naoi and Hiroyuki Naoi : Growth of InNAs on GaAs(100) Substrates by Moleculer-Beam Epitaxy, Journal of Crystal Growth, Vol.189-190, (号), 471-475, 1998..[誌名] ...
閲覧 Tohru Tsuruoka, Nobuyuki Takahashi, R. Francy, Sukekatsu Ushioda, Yoshiki Naoi, Hisao Sato, Shiro Sakai and Yoshihiro Shintani : HREELS Analysis of the Vibrational and Electronic Properties of GaN Film on Sapphire(0001) Grown by Metalorganic Chemical Vapor Deposition, Journal of Crystal Growth, Vol.189-190, (号), 677-681, 1998..[誌名] ...
閲覧 Gen Sazaki, Yukiko Nagatoshi, Yoshihisa Suzuki, Stephen Duen Durbin, Satoru Miyashita, Toshitaka Nakada and Hiroshi Komatsu : Solubility of tetragonal and orthorhombic lysozyme crystals under high pressure, Journal of Crystal Growth, Vol.196, (号), 204-209, 1999..[誌名] ...
閲覧 Shin-ichiro Yanagiya, Gen Sazaki, Stephen D. Durbin, Satoru Miyashita, Toshitaka Nakada, Hiroshi Komatsu, Kazuo Watanabe and Mitsuhiro Motokawa : Effect of a magnetic field on the orientation of hen egg-white lysozyme crystals, Journal of Crystal Growth, Vol.196, No.2-4, 319-324, 1999..[誌名] ...
閲覧 Tao Wang, Mohamed Lachab, Daisuke Nakagawa, T Shirahama and Shiro Sakai : Investigation of Two Dimensional Electron Gas in AlGaN/GaN Heterostructures grown by MOCVD, Journal of Crystal Growth, Vol.203, (号), 443-446, 1999..[誌名] ...
閲覧 Jie Wang, Masaaki Nozaki, Yasuhiro Ishikawa, Maosheng Hao, Sadanori Morishima, Tao Wang, Yoshiki Naoi and Shiro Sakai : Fabrication of Nanoscale Structures of InGaN by MOCVD Lateral Overgrowth, Journal of Crystal Growth, Vol.197, No.1-2, 48-53, 1999..[誌名] ...
閲覧 Jie Wang, Masaaki Nozaki, Mohamed Lachab, Qhalid RS Fareed, Yasuhiro Ishikawa, Tao Wang, Yoshiki Naoi and Shiro Sakai : Formation and Optical Properties of InGaN/GaN Nano-structures Grown on Amorphous Si Substrates by MOCVD, Journal of Crystal Growth, Vol.200, No.1-2, 85-89, 1999..[誌名] ...
閲覧 Qhalid Fareed, Satoru Tottori, Katsushi Nishino and Shiro Sakai : Surface morphology studies on sublimation grown bulk GaN by atomic force microscopy, Journal of Crystal Growth, Vol.200, No.3-4, 348-352, 1999..[誌名] ...
閲覧 Atsushi Mori and Igor L Maksimov : On the Temkin model of solid-liquid interface, Journal of Crystal Growth, Vol.200, No.1-2, 297-304, 1999..[誌名] ...
閲覧 Kazumi Nishioka, Atsushi Mori, Kaoru J Takano, Yoshihito Kaishita and Shingo Narimatsu : Pressure-dependence of the interfacial tension of a critical nucleus in the binary-ideal-solution, Journal of Crystal Growth, Vol.200, No.3-4, 592-598, 1999..[誌名] ...
閲覧 Hong Xing Wang, Tao Wang, Mohamed Lachab, Yasuhiro Ishikawa, Maosheng Hao, Koichi Oyama, Katsushi Nishino, Shiro Sakai and Kikuo Tominaga : Growth of a GaN layer on a glass substrate by metal organic chemical vapor deposition, Journal of Crystal Growth, Vol.206, No.3, 241-244, 1999..[誌名] ...
閲覧 Qhalid Fareed, Satoru Tottori, Takeshi Inaoka, Katsushi Nishino and Shiro Sakai : Dependence of growth conditions on morphology in lateral epitaxial overgrowth of GaN by sublimation method, Journal of Crystal Growth, Vol.207, No.3, 174-178, 1999..[誌名] ...
閲覧 Yoshihisa Suzuki, Satoru Miyashita, Gen Sazaki, Toshitaka Nakada, Tsutomu Sawada and Hiroshi Komatsu : Effects of pressure on growth kinetics of tetragonal lysozyme crystals, Journal of Crystal Growth, Vol.208, No.1-4, 638-644, 2000..[誌名] ...
閲覧 Yoshihisa Suzuki, Tsutomu Sawada, Satoru Miyashita, Hiroshi Komatsu, Gen Sazaki and Toshitaka Nakada : An interferometric study of the solubility of lysozyme crystals under high pressure, Journal of Crystal Growth, Vol.209, No.4, 1018-1022, 2000..[誌名] ...
閲覧 Shin-ichiro Yanagiya, Gen Sazaki, Stephen D. Durbin, Satoru Miyashita, Kazuo Nakajima, Hiroshi Komatsu, Kazuo Watanabe and Mitsuhiro Motokawa : Effect of a magnetic field on the growth rate of tetragonal lysozyme crystals, Journal of Crystal Growth, Vol.208, No.1-4, 645-650, 2000..[誌名] ...
閲覧 Tetsuo Inoue and Kazumi NIshioka : Effects of impurity upon the habit changes in NaBrO3 crystals grown from aqueous solution, Journal of Crystal Growth, Vol.24, No.3-4, 507-511, 2000..[誌名] ...
閲覧 Tao Wang, Y Morishima, N Naoi and Shiro Sakai : A new method for a great reduction of dislocation density in a GaN layer on a sapphire substrate, Journal of Crystal Growth, Vol.213, No.1-2, 188-192, 2000..[誌名] ...
閲覧 Hong X Wang, Tao Wang, Sourindra Mahanty, F Komatsu, T Inaoka, Katsushi Nishino and Shiro Sakai : Growth of GaN layer by metallorganic vapor deposition system with a novel three-flow reactor, Journal of Crystal Growth, Vol.218, (号), 148-154, 2000..[誌名] ...
閲覧 H Naoi, D M Shaw, G J Collins and Shiro Sakai : Heteroepitaxial growth of InAs by low-pressure metalorganic chemical vapor deposition employing in situ generated arsine radicals, Journal of Crystal Growth, Vol.219, No.4, 481-484, 2000..[誌名] ...
閲覧 Nan Jiang, Susumu Kujime, I Ota, Takeshi Inaoka, Yoshihiro Shintani, Hiroshi Makita, Akimitsu Hatta and Akio Hiraki : Growth and structural analysis of nano-diamond films deposited on Si substrates pretreated by various methods, Journal of Crystal Growth, Vol.218, No.2-4, 265-271, 2000..[誌名] ...
閲覧 Naoto Kumagai, Tetsuji Yasuda, Takashi Hanada and Takafumi Yao : In situ measurement of carrier concentration in n-ZnSe by reflectance difference spectroscopy (RDS), Journal of Crystal Growth, Vol.214-215, 547-550, 2000..[誌名] ...
閲覧 Shiro Sakai, Tao Wang, Y Morishima and Yoshiki Naoi : A New Method of Reducing Dislocation Density in GaN Layer Grown on Sapphire Substrate by MOVPE, Journal of Crystal Growth, Vol.221, No.1, 334-337, 2000..[誌名] ...
閲覧 Yoshihiro Kangawa, Tomonori Ito, Atsushi Mori and Akinori Koukitu : Anomalous behavior of excess energy curves of InxGa1-xN grown on GaN and InN, Journal of Crystal Growth, Vol.220, No.4, 401-404, 2000..[誌名] ...
閲覧 Tao Wang, Jie Bai and Shiro Sakai : Influence of InGaN/GaN quantum-well structure on the performance of light-emitting diodes and laser diodes grown on sapphire substrate, Journal of Crystal Growth, Vol.224, No.1/2, 5-10, 2001..[誌名] ...
閲覧 Jie Bai, Yuji Izumi, Tao Wang and Shiro Sakai : A Study of dislocations in InGaN/GaN multiple-quantum-well structure grownon (11-20) sapphire substrate, Journal of Crystal Growth, Vol.223, No.1-2, 61-68, 2001..[誌名] ...
閲覧 Hiroyuki Naoi, Denis M Shaw, Yoshiki Naoi, G J Collins and Shiro Sakai : Growth of InNAs by low-pressure metalorganic chemical vapor deposition employing microwave-cracked nitrogen and in situ generated arsine radicals, Journal of Crystal Growth, Vol.222, No.3, 511-517, 2001..[誌名] ...
閲覧 Nan Jiang, K Sugimoto, Kazuyuki Eguchi, Takeshi Inaoka, Yoshihiro Shintani, Hiroshi Makita, Akimitsu Hatta and Akio Hiraki : Reducing the grain size for fabrication of nanocrystallline diamond films, Journal of Crystal Growth, Vol.222, No.3, 591-594, 2001..[誌名] ...
閲覧 Yasuaki Tatsuoka, Masaya Uemura, Takahiro Kitada, Satoshi Shimomura and Satoshi Hiyamizu : Substrate temperature dependence of surface migration of As atoms during molecular beam epitaxy of GaAsP on a (411)A GaAs substrate, Journal of Crystal Growth, Vol.227-228, (号), 266-270, 2001..[誌名] ...
閲覧 Satoshi Shimomura, Yoshiaki Kitano, Hidehiko Kuge, Takahiro Kitada, Kazuo Nakajima and Satoshi Hiyamizu : Lattice-matched InxGa1-xAs/InxAl1-xAs quantum wells (x = 0.18 and 0.19) grown on (411)A- and (100)-oriented InGaAs ternary substrates by molecular beam epitaxy, Journal of Crystal Growth, Vol.227-228, (号), 72-76, 2001..[誌名] ...
閲覧 Takahiro Kitada, Toyohiro Aoki, Issei Watanabe, Satoshi Shimomura and Satoshi Hiyamizu : Optimized channel thickness for high electron mobility in pseudomorphic In0.74Ga0.26As/In0.52Al0.48As quantum-well HEMT structures with (411)A super-flat interfaces grown by MBE, Journal of Crystal Growth, Vol.227-228, (号), 289-293, 2001..[誌名] ...
閲覧 Jie Bai, Tao Wang, Hong-Dong Li, Nan Jiang and Shiro Sakai : (0001) oriented GaN epilayer grown on (11-20) sapphire by MOCVD, Journal of Crystal Growth, Vol.231, No.1-2, 41-47, 2001..[誌名] ...
閲覧 Hong X Wang, Y Amijima, Yasuhiro Ishihama and Shiro Sakai : Influence of carrier gas on the morphology and structure of GaN layers grown on sapphire substrate by six-wafer metal organic chemical vapor deposition system, Journal of Crystal Growth, Vol.233, No.4, 681-686, 2001..[誌名] ...
閲覧 Arata Natsume, Naohisa Inoue, Katuto Tanahashi and Atsushi Mori : Dependence of temperature gradient on growth rate in CZ silicon, Journal of Crystal Growth, Vol.225, No.2-4, 221-224, 2001..[誌名] ...
閲覧 Nan Jiang, S Shinjo, Takeshi Inaoka, Yoshihiro Shintani, T Ito, Hiroshi Makita, Akimitsu Hatta and Akio Hiraki : Characterization of N-doped Diamond Films by Transmission Electron Microscopy, Journal of Crystal Growth, Vol.224, No.1-2, 111-116, 2001..[誌名] ...
閲覧 Nan Jiang, Kazuyuki Eguchi, Satoshi Noguchi, Takeshi Inaoka and Yoshihiro Shintani : Structural characteristics and field electron emission properties of nano-diamond/carbon films, Journal of Crystal Growth, Vol.236, No.4, 577-582, 2002..[誌名] ...
閲覧 Hirofumi Yamamoto, Yoshiki Naoi and Yoshihiro Shintani : Growth of Diamond Films on Grooved Si Substrates, Journal of Crystal Growth, Vol.236, No.1, 176-180, 2002..[誌名] ...
閲覧 Tao Wang, Yu-Huai Liu, Young-Bae Lee, Yuji Izumi, Jin-Ping Ao, Jie Bai, Hong-Dong Li and Shiro Sakai : Fabrication of high performance of AlGaN/GaN-based UV light-emitting diodes, Journal of Crystal Growth, Vol.235, No.1, 177-182, 2002..[誌名] ...
閲覧 Hong X Wang, Y Amijima, Yasuhiro Ishihama and Shiro Sakai : The development of a novel three-flow six-wafer reactor of metal-organic chemical vapor deposition system for GaN-based structure, Journal of Crystal Growth, Vol.235, No.1, 173-176, 2002..[誌名] ...
閲覧 Masayo Sone, Tetsuo Inoue, Shin-ichiro Yanagiya and Atsushi Mori : Habit changes of NaBrO3 crystals grown from aqueous solution doped with sodium acetate, Journal of Crystal Growth, Vol.237-239, No.1, 86-89, 2002..[誌名] ...
閲覧 Katsushi Nishino, Daigo Kikuta and Shiro Sakai : Bulk GaN growth by direct synthesis method, Journal of Crystal Growth, Vol.237-239, No.0, 922-925, 2002..[誌名] ...
閲覧 Tadasuke Kamei, Tetsuo Inoue, Shin-ichiro Yanagiya and Atsushi Mori : Striations in the KCl single crystals grown from aqueous solutions, Journal of Crystal Growth, Vol.243, No.3-4, 517-521, 2002..[誌名] ...
閲覧 Hong-dong Li, Tao Wang, Nan Jiang, Yu-Huai Liu, Jie Bai and Shiro Sakai : Interaction Between Inversion Domains and InGaN/GaN Multiple Quantum Wells Investigated by Transmission Electron Microscopy, Journal of Crystal Growth, Vol.247, No.1-2, 28-34, 2003..[誌名] ...
閲覧 Issei Watanabe, Kenji Kanzaki, Takahiro Kitada, Masashi Yamamoto, Satoshi Shimomura and Satoshi Hiyamizu : Characterization of interface roughness scattering of electrons in an In0.53Ga0.47As/In0.52Al0.48As QW-HEMT structure with (411)A super-flat interfaces, Journal of Crystal Growth, Vol.251, (号), 90-95, 2003..[誌名] ...
閲覧 Yu Higuchi, Masaya Uemura, Yuji Masui, Takahiro Kitada, Satoshi Shimomura and Satoshi Hiyamizu : V/III ratio dependence of surface migration length of As4 molecules during molecular beam epitaxy of GaAsP on (411)A GaAs substrates, Journal of Crystal Growth, Vol.251, No.1-4, 80-84, 2003..[誌名] ...
閲覧 Hiroyuki Naoi, Denis M Shaw, Yoshiki Naoi, Shiro Sakai and G Collins : Growth of InAs on GaAs(100) by Low-Pressure Metalorganic Chemical Vapor Deposition Employing in situ Generated Arsine Radicals, Journal of Crystal Growth, Vol.250, No.3-4, 290-297, 2003..[誌名] ...
閲覧 Yukiko Nagatoshi, Gen Sazaki, Yoshihisa Suzuki, Satoru Miyashita, Takuro Matsui, Toru Ujihara, Kozo Fujiwara, Noritaka Usami and Kazuo Nakajima : Effects of high pressure on the growth kinetics of orthorhombic lysozyme crystals, Journal of Crystal Growth, Vol.254, No.1, 188-195, 2003..[誌名] ...
閲覧 Shin-ichiro Yanagiya, Susumu Nishikata, Gen Sazaki, Akitaka Hoshino, Kazuo Nakajima and Tetsuo Inoue : Recrystallization of Cu-phthalocyanine on KCl (0 0 1) substrates by annealing method, Journal of Crystal Growth, Vol.254, No.1-2, 244-250, 2003..[誌名] ...
閲覧 Katsuhiko Ooshita, Tetsuo Inoue, Takashi Sekiguchi, Shin-ichiro Yanagiya and Atsushi Mori : Flux growth of ZnS single crystals and their characterization, Journal of Crystal Growth, Vol.267, No.1-2, 74-79, 2004..[誌名] ...
閲覧 Tao Wang, J P Parbrook, N C Harrison, Jin-Ping Ao and Yasuo Ohno : Highly improved performance of a 350nm ultraviolet light-emitting diode containing AlxGa1-xN/AlyGa1-yN distributed Bragg reflectors, Journal of Crystal Growth, Vol.267, No.3-4, 583-587, 2004..[誌名] ...
閲覧 Yu-Huai Liu, Hong-Dong Li, Jin-Ping Ao, Young-Bae Lee, Tao Wang and Shiro Sakai : Influence of undoped GaN layer thickness to the performance of AlGaN/GaN-based ultraviolet light-emitting diodes, Journal of Crystal Growth, Vol.268, No.1-2, 30-34, 2004..[誌名] ...
閲覧 Takamasa Kaito, Tetsuo Inoue, Shin-ichiro Yanagiya and Atsushi Mori : Melt Growth and Characterization of PbBr2 Single Crystals, Journal of Crystal Growth, Vol.275, No.1-2, e721-e726, 2005..[誌名] ...
閲覧 Shin-ichiro Yanagiya, Hironori Wakamatsu, Osamu Nishikata, Atsushi Mori and Tetsuo Inoue : Growth of copper-phthalocyanine nano-crystallite epitaxially grown on KCl(001) substrate, Journal of Crystal Growth, Vol.275, No.1-2, e1993-e1996, 2005..[誌名] ...
閲覧 Hiroaki Kusumoto, Takamasa Kaito, Shin-ichiro Yanagiya, Atsushi Mori and Tetsuo Inoue : Growth of single crystals of PbBr2 in silica gel, Journal of Crystal Growth, Vol.277, No.1-4, 536-540, 2005..[誌名] ...
閲覧 Fawang Yan, Yoshiki Naoi, Masashi Tsukihara, Takayuki Yadani and Shiro Sakai : Interdiffusion induced In(Ga)NAs films growth on GaAs substrates by low-pressure metalorganic chemical vapor deposition, Journal of Crystal Growth, Vol.282, No.1-2, 29-35, 2005..[誌名] ...
閲覧 K. Kumar, K. Ramamoorthy, Pankaj M. Koinkar, R. Chandramohan and S. Sankaranarayanan : A Novel In Situ Synthesis and Growth of ZnAl2O4 Thin Films, Journal of Crystal Growth, Vol.289, No.1, 405-407, 2006..[誌名] ...
閲覧 Takamasa Kaito, Shin-ichiro Yanagiya, Atsushi Mori, Mami Kurumada, Chihiro Kaito and Tetsuo Inoue : Effects of magnetic field on the gel growth of PbBr2, Journal of Crystal Growth, Vol.289, No.1, 275-277, 2006..[誌名] ...
閲覧 Takashi Sugimoto, Atsushi Mori and Tetsuo Inoue : Effectof 'overheating treatment' on the stability of KCl aqueous solutions, Journal of Crystal Growth, Vol.292, No.1, 108-110, 2006..[誌名] ...
閲覧 Takamasa Kaito, Shin-ichiro Yanagiya, Atsushi Mori, Mami Kurumada, Chihiro Kaito and Tetsuo Inoue : Characteristic nanocrystallite growth of PbBr2 in a magnetic field in gel, Journal of Crystal Growth, Vol.294, No.2, 407-410, 2006..[誌名] ...
閲覧 Shuichi Kawamichi, Katsushi Nishino, Kazuhide Sumiyoshi, Masashi Tsukihara, Fanwang Yan and Shiro Sakai : Inversion domain in AlGaN films grown on patterned sapphire substrate, Journal of Crystal Growth, Vol.298, (号), 297-299, 2007..[誌名] ...
閲覧 Kazuhide Sumiyoshi, Masashi Tsukihara, Ken Kataoka, Shuichi Kawamichi, Tadashi Okimoto, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai : Al0.17Ga0.83N film with Middle Temperature Intermediate Layer Grown on Trenched Sapphire Substrate by MOCVD, Journal of Crystal Growth, Vol.298, No.SI, 300-304, 2007..[誌名] ...
閲覧 Naoto Kumagai, K. Watanabe, Y. Nakata and Yasuhiko Arakawa : Optical properties of p-type modulation-doped InAs quantum dot structures grown by molecular beam epitaxy, Journal of Crystal Growth, Vol.301-302, 805-808, 2007..[誌名] ...
閲覧 M Tsukihara, K Sumiyoshi, T Okimoto, K Kataoka, S Kawamichi, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai : Effect of middletemperature intermediate layer on crystal quality of AlGaN grown on sapphire substrates by metal organic chemical vapor deposition, Journal of Crystal Growth, Vol.300, No.1, 190-193, 2007..[誌名] ...
閲覧 Takahiro Kitada, Satoshi Shimomura and Satoshi Hiyamizu : Surface segregation of indium atoms during molecular beam epitaxy of InGaAs/GaAs superlattices on (n11)A GaAs substrates, Journal of Crystal Growth, Vol.301-302, 172-176, 2007..[誌名] ...
閲覧 Issei Watanabe, Keisuke Shinohara, Takahiro Kitada, Satoshi Shimomura, Akira Endoh, Yoshimi Yamashita, Takashi Mimura, Satoshi Hiyamizu and Toshiaki Matsui : Thermal stability of Ti/Pt/Au ohmic contacts for cryogenically cooled InP-based HEMTs on(411)A-oriented substrates by MBE, Journal of Crystal Growth, Vol.301-302, 1025-1029, 2007..[誌名] ...
閲覧 Kentaro Nagamatsu, N. Okada, Kunihiko Sugimura, Shyouzo Tsuzuki, F. Mori, K. Iida, A. Bando, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki : High-efficiency AlGaN-based UV light-emitting diode on laterally overgrown AlN, Journal of Crystal Growth, Vol.310, No.7-9, 2326-2329, 2008..[誌名] ...
閲覧 Takahiro Kasai, K. Nagata, T. Mori, Kentaro Nagamatsu, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki : Relaxation and recovery processes of AlxGa1-xN grown on AlN underlying layer, Journal of Crystal Growth, Vol.311, No.10, 2850-2852, 2009..[誌名] ...
閲覧 Takahiro Kitada, Takuya Mukai, Tomoya Takahashi, Ken Morita and Toshiro Isu : Fast carrier relaxation of self-assembled InAs quantum dots embedded in strain-relaxed In0.35Ga0.65As barriers for ultrafast nonlinear optical switching applications, Journal of Crystal Growth, Vol.311, No.7, 1807-1810, 2009..[誌名] ...
閲覧 Ryo Matsuoka, Takashi Okimoto, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai : AlGaN epitaxial lateral overgrowth on Ti-evaporated GaN/sapphire substrate, Journal of Crystal Growth, Vol.311, No.10, 2847-2849, 2009..[誌名] ...
閲覧 Shin-ichiro Yanagiya and Nobuo Goto : Hybrid observation of crystal growth using laser confocal microscope with atomic force microscope, Journal of Crystal Growth, Vol.312, No.22, 3356-3360, 2010..[誌名] ...
閲覧 Atsushi Mori : Monte Carlo simulation of growth of hard-sphere crystals on a square pattern, Journal of Crystal Growth, Vol.318, No.1, 66-71, 2011..[誌名] ...
閲覧 Yoshihisa Suzuki, Tsutomu Sawada and Katsuhiro Tamura : Colloidal crystallization by a centrifugation method, Journal of Crystal Growth, Vol.318, No.1, 780-783, 2011..[誌名] ...
閲覧 Yoshihisa Suzuki, Emi Konda, Hironori Hondoh and Katsuhiro Tamura : Effects of temperature, pressure, and pH on the solubility of triclinic lysozyme crystals, Journal of Crystal Growth, Vol.318, No.1, 1085-1088, 2011..[誌名] ...
閲覧 Yoshihisa Suzuki, Atsushi Mori, Takahisa Fujiwara and Katsuhiro Tamura : Precise characterization of grain structures, stacking disorders and lattice disorders of a close-packed colloidal crystal, Journal of Crystal Growth, Vol.322, No.1, 109-113, 2011..[誌名] ...
閲覧 Xiangmeng Lu, Y. Izumi, M. Koyama, Y. Nakata, S. Adachi and S. Muto : Effects of growth conditions on the size and density of self-assembled InAlAs/AlGaAs quantum dots grown on GaAs by molecular beam epitaxy, Journal of Crystal Growth, Vol.322, No.1, 6-9, 2011..[誌名] ...
閲覧 Shunsuke Ohkouchi, Naoto Kumagai, Masayuki Shirane, Yuichi Igarashi, Masahiro Nomura, Yasutomo Ota, Shinichi Yorozu, Satoshi Iwamoto and Yasuhiko Arakawa : New method to isolate and distribute photoluminescence emissions from InAs quantum dots over a wide-wavelength range, Journal of Crystal Growth, Vol.323, No.1, 250-253, 2011..[誌名] ...
閲覧 Takahiro Kitada, Tomoya Takahashi, Hyuga Ueyama, Ken Morita and Toshiro Isu : Marked reduction in photocarrier lifetime by erbium doping into self-assembled InAs quantum dots embedded in strain-relaxed InGaAs barriers, Journal of Crystal Growth, Vol.323, No.1, 241-243, 2011..[誌名] ...
閲覧 Takahisa Fujiwara, Yoshihisa Suzuki and Katsuhiro Tamura : Solubility measurements by in situ observation of the apex region formed by the (110), (1-10) and (101) faces of tetragonal lysozyme crystals, Journal of Crystal Growth, Vol.334, No.1, 134-137, 2011..[誌名] ...
閲覧 Atsushi Mori and Yoshihisa Suzuki : Vanishing linear term in chemical potential difference in volume term of work of critical nucleus formation for phase transition without volume change, Journal of Crystal Growth, Vol.375, No.1, 16-19, 2013..[誌名] ...
閲覧 Takahiro Kitada, Hyuga Ueyama, Ken Morita and Toshiro Isu : Ultrafast photocarrier relaxation processes in Er-doped InAs quantum dots embedded in strain-relaxed InGaAs barriers, Journal of Crystal Growth, Vol.378, (号), 485-488, 2013..[誌名] ...
閲覧 Atsushi Mori : Volume term of work of critical nucleus formation in terms of chemical potential difference relative to equilibrium one, Journal of Crystal Growth, Vol.377, No.1, 118-122, 2013..[誌名] ...
閲覧 Atsushi Mori : Validity of commonly used formula of nucleation work for bubble nucleation, Journal of Crystal Growth, Vol.377, No.1, 64-65, 2013..[誌名] ...
閲覧 Yoshihisa Suzuki, Gen Sazaki, Kaori Hashimoto, Takahisa Fujiwara and Yoshinori Furukawa : Colloidal crystallization utilizing interfaces of unidirectionally growing ice crystals, Journal of Crystal Growth, Vol.383, 67-71, 2013..[誌名] ...
閲覧 Naoto Kumagai, Shunsuke Ohkouchi, Katsuyuki Watanabe, Satoshi Iwamoto and Yasuhiko Arakawa : Rim formation on non-elongated InAs quantum dots grown by partial cap and annealing process at low temperature, Journal of Crystal Growth, Vol.378, 558-561, 2013..[誌名] ...
閲覧 Shunsuke Ohkouchi, Naoto Kumagai, Katsuyuki Watanabe, Satoshi Iwamoto and Yasuhiko Arakawa : Shape evolution of low density InAs quantum dots in the partial capping process by using As2 source, Journal of Crystal Growth, Vol.378, 549-552, 2013..[誌名] ...
閲覧 Yoshihisa Suzuki, Atsushi Mori, Masahide Sato, Hiroyasu Katsuno and Tsutomu Sawada : Colloidal crystallization on tilted substrates under gravitational fields, Journal of Crystal Growth, Vol.401, No.1, 905-909, 2014..[誌名] ...
閲覧 Masahide Sato, Hiroyasu Katsuno and Yoshihisa Suzuki : Ordering of Brownian Particles from Walls Due to an External Force, Journal of Crystal Growth, Vol.401, 87-92, 2014..[誌名] ...
閲覧 Xiangmeng Lu, Shuzo Matsubara, Yoshinori Nakagawa, Takahiro Kitada and Toshiro Isu : Suppression of photoluminescence from wetting layer of InAs quantum dots grown on (113)B GaAs with AlAs cap, Journal of Crystal Growth, Vol.425, 106-109, 2015..[誌名] ...
閲覧 Masanori Ogarane, Sho Katoh, Yoshinori Nakagawa, Ken Morita, Takahiro Kitada and Toshiro Isu : Terahertz emission from a coupled multilayer cavity with InAs quantum dots, Journal of Crystal Growth, Vol.425, 303-306, 2015..[誌名] ...
閲覧 Ryo Suzuki, Haruhiko Koizumi, Kenichi Kojima, Seijiro Fukuyama, Yasutomo Arai, Katsuo Tsukamoto, Yoshihisa Suzuki, Masaru Tachibana and Satoshi Uda : Characterization of grown-in dislocations in high-quality glucose isomerase crystals by synchrotron monochromatic-beam X-ray topography, Journal of Crystal Growth, Vol.468, 299-304, 2017..[誌名] ...
閲覧 Sho Kawakami, Atsushi Mori, Ken Nagashima, Masanobu Haraguchi and Toshihiro Okamoto : Hybrid plasmonic-photonic crystal formed on gel-immobilized colloidal crystal via solvent substitution, Journal of Crystal Growth, Vol.468, No.1, 740-743, 2017..[誌名] ...
閲覧 O1. Barry, A. Tanaka, Kentaro Nagamatsu, S. Bae, K. Lekhal, J. Matsushita, M. Deki, S. Nitta, Y. Honda and H. Amano : Effect of V/III ratio on the surface morphology and electrical properties of m-plane (1010) GaN homoepitaxial layers, Journal of Crystal Growth, Vol.468, (号), 552-556, 2017..[誌名] ...
閲覧 Xiangmeng Lu, Naoto Kumagai, Yasuo Minami, Takahiro Kitada and Toshiro Isu : Effects of Sb-soak on InAs quantum dots grown on (001) and (113)B GaAs substrates, Journal of Crystal Growth, Vol.477, 221-224, 2017..[誌名] ...
閲覧 Xiangmeng Lu, Hiroto Ota, Naoto Kumagai, Yasuo Minami, Takahiro Kitada and Toshiro Isu : Two-color surface-emitting lasers by a GaAs-based coupled multilayer cavity structure for coherent terahertz light sources, Journal of Crystal Growth, Vol.477, 249-252, 2017..[誌名] ...
閲覧 X. Yang, S. Nitta, Kentaro Nagamatsu, S. Bae, H. Lee, Y. Liu, M. Pristovsek, Y. Honda and H. Amano : Growth of hexagonal boron nitride on sapphire substrate by pulsed-mode metal-organic vapor phase epitaxy, Journal of Crystal Growth, Vol.482, (号), 1-8, 2018..[誌名] ...
閲覧 Hengyu Xu, Caiping Wan, Ling Sang and Jin-Ping Ao : Influence on curvature induced stress to the flatband voltage and interface density of 4H-SiC MOS structure, Journal of Crystal Growth, Vol.505, 59-61, 2019..[誌名] ...
閲覧 K. Uesugi, Y. Hayashi, K. Shojiki, S. Xiao, Kentaro Nagamatsu, H. Yoshida and H. Miyake : Fabrication of AlN templates on SiC substrates by sputtering-deposition and high-temperature annealing, Journal of Crystal Growth, Vol.510, (号), 13-17, 2019..[誌名] ...
閲覧 Xiangmeng Lu, Yasuo Minami and Takahiro Kitada : Sublattice reversal in GaAs/Ge/GaAs and AlAs/Ge/AlAs heterostructures grown on (113)A and (113)B GaAs substrates, Journal of Crystal Growth, Vol.512, (号), 74-77, 2019..[誌名] ...
閲覧 Kentaro Nagamatsu, Y. Ando, T. Kono, H. Cheong, S. Nitta, Y. Honda, M. Pristovsek and H. Amano : Effect of substrate misorientation on the concentration of impurities and surface morphology of an epitaxial GaN layer on N-polar GaN substrate by MOVPE, Journal of Crystal Growth, Vol.512, (号), 78-83, 2019..[誌名] ...
閲覧 Z. Ye, S. Nitta, Kentaro Nagamatsu, N. Fujimoto, M. Kushimoto, M. Deki, A. Tanaka, Y. Honda, M. Pristovsek and H. Amano : Ammonia decomposition and reaction by high-resolution mass spectrometry for group III Nitride epitaxial growth, Journal of Crystal Growth, Vol.516, (号), 63-66, 2019..[誌名] ...
閲覧 Caiping Wan, Hengyu Xu, Jinghua Xia and Jin-Ping Ao : Ultrahigh-temperature oxidation of 4H-SiC (0001) and gate oxide reliability dependence on oxidation temperature, Journal of Crystal Growth, Vol.530, 125250-1-125250-4, 2020..[誌名] ...
閲覧 Taofei Pu, Xiaobo Li, Taowei Peng, Tian Xie, Liuan Li and Jin-Ping Ao : Influence of metal-insulator-semiconductor gate structure on normally-off P-GaN heterojunction field effect transistors, Journal of Crystal Growth, Vol.532, 125395-1-125395-5, 2020..[誌名] ...

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