『徳島大学 教育・研究者情報データベース (EDB)』---[学外] /
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REF=閲覧 Journal of Vacuum Science & Technology B (American Vacuum Society)

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有効な情報: 21件 + 無効な情報: 3件 = 全ての情報: 24件

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閲覧 閲覧 徳島大学 …(3)
閲覧 閲覧 徳島大学 …(3)
閲覧 (未定義) …(17)
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閲覧 K. Deguchi, K. Miyoshi, H. Ban, H. Kyuragi, Shinsuke Konaka and T. Matsud : Application of x-ray lithography with single-layer resist process to subquartermicron large scale integrated circuit fabrication, Journal of Vacuum Science & Technology B, Vol.B10, No.6, 3145-3149, 1992..[誌名] ...
閲覧 A. Wakejima, A. Inoue, Takahiro Kitada, N. Tomita, S. Shimomura, S. Hiyamizu, M. Fujii, T. Yamamoto, K. Kobayashi and N. Sano : Lateral variation of indium content in InGaAs grown on GaAs channeled substrates by molecular beam epitaxy, Journal of Vacuum Science & Technology B, Vol.12, No.2, 1102-1105, 1994..[誌名] ...
閲覧 S. Shimomura, K. Shinohara, Takahiro Kitada, S. Hiyamizu, Y. Tsuda, N. Sano, A. Adachi and Y. Okamoto : Much improved interfaces in GaAs/AlAs quantum wells grown on (411)A GaAs substrates by molecular-beam epitaxy, Journal of Vacuum Science & Technology B, Vol.13, No.2, 696-698, 1995..[誌名] ...
閲覧 K. Nii, R. Kuriyama, T. Hiraoka, Takahiro Kitada, S. Shimomura and S. Hiyamizu : Larger critical thickness determined by photoluminescence measurements in pseudomorphic In0.25Ga0.75As/Al0.32Ga0.68As quantum well grown on (411)A GaAs substrates by molecular beam epitaxy, Journal of Vacuum Science & Technology B, Vol.17, No.3, 1167-1170, 1999..[誌名] ...
閲覧 Yasuaki Tatsuoka, Hitoshi Kamimoto, Yoshiaki Kitano, Takahiro Kitada, Satoshi Shimomura and Satoshi Hiyamizu : GaAs/GaAs0.8P0.2 quantum wells grown on (n11)A GaAs substrates by molecular beam epitaxy, Journal of Vacuum Science & Technology B, Vol.17, No.3, 1155-1157, 1999..[誌名] ...
閲覧 Takahiro Kitada, Keisuke Nii, Tetsuya Hiraoka, Satoshi Shimomura and Satoshi Hiyamizu : High-quality InAlAs layers grown on (411)A-oriented InP substrates by molecular beam epitaxy, Journal of Vacuum Science & Technology B, Vol.17, No.4, 1482-1484, 1999..[誌名] ...
閲覧 Durga Basak, Katsushi Nishino, Qhalid RS Fareed and Shiro Sakai : Characterization of RIE etched surface of GaN using methane gas with chlorine plasma, Journal of Vacuum Science & Technology B, Vol.18, No.5, 2491-2494, 2000..[誌名] ...
閲覧 Toyohiro Aoki, Takahiro Kitada, Satoshi Shimomura and Satoshi Hiyamizu : Super-flat interfaces in pseudomorphic In0.72Ga0.28As/In0.52Al0.48As quantum wells grown on (411)A InP substrates by molecular beam epitaxy, Journal of Vacuum Science & Technology B, Vol.18, No.3, 1598-1600, 2000..[誌名] ...
閲覧 Takahiro Kitada, Yasuaki Tatsuoka, Satoshi Shimomura and Satoshi Hiyamizu : As4 pressure dependence of surface segregation of indium atoms during molecular beam epitaxy of In0.08Ga0.92As/GaAs superlattices on (411)A GaAs substrates, Journal of Vacuum Science & Technology B, Vol.18, No.3, 1579-1582, 2000..[誌名] ...
閲覧 Y. Kitano, R. Kuriyama, Takahiro Kitada, S. Shimomura, S. Hiyamizu, Y. Nishijima and H. Ishikawa : In0.05Ga0.95As/Al0.3Ga0.7As quantum wells grown on a (411)A-oriented In0.06Ga0.94As ternary substrate by molecular beam epitaxy, Journal of Vacuum Science & Technology B, Vol.18, No.3, 1576-1578, 2000..[誌名] ...
閲覧 H. Kamimoto, Y. Tatsuoka, Takahiro Kitada, S. Shimomura and S. Hiyamizu : In0.18Ga0.82As/GaAs1-yPy quantum wells grown on (n11)A GaAs substrates by molecular beam epitaxy, Journal of Vacuum Science & Technology B, Vol.18, No.3, 1572-1575, 2000..[誌名] ...
閲覧 Y. Tatsuoka, H. Kamimoto, Takahiro Kitada, S. Shimomura and S. Hiyamizu : Surface migration of group V atoms in GaAsP grown on GaAs channeled substrates by molecular beam epitaxy, Journal of Vacuum Science & Technology B, Vol.18, No.3, 1549-1552, 2000..[誌名] ...
閲覧 F P Fewster, L N Andrew, H O Hughes, C Staddon, T C Foxon, A Bell, S T Cheng, Tao Wang, Shiro Sakai, K Jacobs and I Moerman : X-ray studies of group III-nitride quantum wells with high quality interfaces, Journal of Vacuum Science & Technology B, Vol.18, No.4, 2300-2303, 2000..[誌名] ...
閲覧 Takahiro Kitada, Keisuke Nii, Tetsuya Hiraoka, Satoshi Shimomura and Satoshi Hiyamizu : Improved interface abruptness in pseudomorphic InGaAs/AlGaAs quantum wells with (411)A super-flat interfaces grown by molecular beam epitaxy, Journal of Vacuum Science & Technology B, Vol.19, No.4, 1546-1549, 2001..[誌名] ...
閲覧 I. Watanabe, K. Kanzaki, T. Aoki, Takahiro Kitada, S. Shimomura and S. Hiyamizu : Mobility enhancement by reduced remote impurity scattering in a pseudomorphic In0.7Ga0.3As/In0.52Al0.48As quantum well high electron mobility transistor structure with (411)A super-flat interfaces grown by molecular-beam epitaxy, Journal of Vacuum Science & Technology B, Vol.19, No.4, 1515-1518, 2001..[誌名] ...
閲覧 A.P. Young, L.J. Brillson, Yoshiki Naoi and C.W. Tu : Chemical composition, morphology, and deep level electronic states of GaN(0001) (1x1) surfaces prepared by indium decapping, Journal of Vacuum Science & Technology B, Vol.B19, No.6, 2063-2066, 2001..[誌名] ...
閲覧 Y. Tatsuoka, M. Uemura, Takahiro Kitada, S. Shimomura and S. Hiyamizu : Dissociation of As4 molecules during molecular beam epitaxy of GaAsP on (n11)A and (n11)B GaAs substrates, Journal of Vacuum Science & Technology B, Vol.20, No.1, 282-285, 2002..[誌名] ...
閲覧 M. Imura, H. Kurohara, Y. Masui, T. Asano, Takahiro Kitada, S. Shimomura and S. Hiyamizu : Much improved flat interfaces of InGaAs/AlAsSb quantum well structures grown on (411)A InP substrates by molecular-beam epitaxy, Journal of Vacuum Science & Technology B, Vol.23, No.3, 1158-1161, 2005..[誌名] ...
閲覧 S. Katoh, H. Sagisaka, M. Yamamoto, I. Watanabe, Takahiro Kitada, S. Shimomura and S. Hiyamizu : Interface roughness characterization by electron mobility of pseudomorphic In0.74Ga0.26As/In0.52Al0.48As modulation-doped quantum wells grown on (411)A InP substrates by molecular beam epitaxy, Journal of Vacuum Science & Technology B, Vol.23, No.3, 1154-1157, 2005..[誌名] ...
閲覧 H. Hino, A. Shigenobu, K. Ohmori, Takahiro Kitada, S. Shimomura and S. Hiyamizu : Pulse oscillation of self-organize In0.53Ga0.47As quantum wire lasers grown on (775)B InP substrates by molecular beam epitaxy, Journal of Vacuum Science & Technology B, Vol.23, No.6, 2526-2529, 2005..[誌名] ...
閲覧 H. Sagisaka, Takahiro Kitada, S. Shimomura, S. Hiyamizu, I. Watanabe, T. Matsui and T. Mimura : Suppression of surface segregation of silicon dopants during molecular beam epitaxy of (411)A In0.75Ga0.25As/In0.52Al0.48As pseudomorphic high electron mobility transistor structures, Journal of Vacuum Science & Technology B, Vol.24, No.6, 2668-2671, 2006..[誌名] ...

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