『徳島大学 教育・研究者情報データベース (EDB)』---[学外] /
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OWN=閲覧 大野 恭秀 ([徳島大学.ポストLEDフォトニクス研究所]/[徳島大学.理工学部.理工学科.電気電子システムコース.物性デバイス講座])

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有効な情報: 31件 + 無効な情報: 1件 = 全ての情報: 32件

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閲覧 Yusuke Yamashiro, Koichi Inoue, Yasuhide Ohno, Kenzo Maehashi and Kazuhiko Matsumoto : Enhancement of ElectronPhonon Interaction by Band-Gap Opening in Bilayer Graphene, Journal of the Physical Society of Japan, Vol.83, No.3, 034703, 2014. ...
閲覧 Kazuhiko Matsumoto, Kenzo Maehashi, Yasuhide Ohno and Koichi Inoue : Recent advances in functional graphene biosensors, Journal of Physics D: Applied Physics, Vol.47, No.9, 094005, 2014. ...
閲覧 Kohei Seike, Yusuke Fujii, Yasuhide Ohno, Kenzo Maehashi, Koichi Inoue and Kazuhiko Matsumoto : Floating-gated memory based on carbon nanotube field-effect transistors with Si floating dots, Japanese Journal of Applied Physics, Vol.53, No.4S, 04EN07, 2014. ...
閲覧 Masaki Hasegawa, Yuki Hirayama, Yasuhide Ohno, Kenzo Maehashi and Kazuhiko Matsumoto : Characterization of reduced graphene oxide field-effect transistor and its application to biosensor, Japanese Journal of Applied Physics, Vol.53, No.5S1, 05FD05, 2014. ...
閲覧 Toshio Kawahara, Satarou Yamaguchi, Yasuhide Ohno, Kenzo Maehashi, Kazuhiko Matsumoto, Kazumasa Okamoto, Risa Utsunomiya, Teruaki Matsuba, Yuki Matsuoka and Masamichi Yoshimura : Raman spectral mapping of self-aligned carbon nanowalls, Japanese Journal of Applied Physics, Vol.53, No.5S1, 05FD10, 2014. ...
閲覧 Fan Yang, A.A. Taskin, Satoshi Sasaki, Kouji Segawa, Yasuhide Ohno, Kazuhiko Mastumoto and Yoichi Ando : Top gating of epitaxial (Bi1-xSbx)2Te3 topological insulator thin films, Applied Physics Letters, Vol.104, No.16, 161614, 2014. ...
閲覧 Toshio Kawahara, Satarou Yamaguchi, Yasuhide Ohno, Kenzo Maehashi, Kazuhiko Matsumoto and Kazumasa Okamoto : Carbon Nanowall Field Effect Transistors Using a Self-Aligned Growth Process, e-Journal of Surface Science and Nanotechnology, Vol.12, 225-229, 2014. ...
閲覧 Takashi Ikuta, Kenta Gumi, Yasuhide Ohno, Kenzo Maehashi, Koichi Inoue and Kazuhiko Matsumoto : Direct graphene synthesis on a Si/SiO2 substrate by a simple annealing process, Materials Research Express, Vol.1, No.2, 025028, 2014. ...
閲覧 Akira Fukuda, Daiju Terasawa, Yasuhide Ohno and Kazuhiko Matsumoto : Effect of the Inert Gas Adsorption on the Bilayer Graphene to the Localized Electron Magnetotransport, Journal of Physics: Conference Series, Vol.568, No.5, 052009, 2014. ...
閲覧 Fan Yang, A.A. Taskin, Satoshi Sasaki, Kouji Segawa, Yasuhide Ohno, Kazuhiko Matsumoto and Yoichi Ando : Dual-Gated Topological Insulator Thin-Film Device for Efficient Fermi-Level Tuning, ACS Nano, Vol.9, No.4, 4050-4055, 2015. ...
閲覧 Masatoshi Nakamura, Yasushi Kanai, Yasuhide Ohno, Kenzo Maehashi, Koichi Inoue and Kazuhiko Matsumoto : Graphene-FET-based gas sensor properties depending on substrate surface conditions, Japanese Journal of Applied Physics, Vol.54, No.6S1, 06FF11, 2015. ...
閲覧 Yasuhide Ohno, Kanai Yasushi, Mori Yuki, Masao Nagase and Matsumoto Kazuhiko : Top-gated graphene field-effect transistors by low-temperature synthesized SiNx insulator on SiC substrates, Japanese Journal of Applied Physics, Vol.55, No.6S1, 06GF09, 2016. ...
閲覧 Kanai Yasushi, Ikuta Takashi, Ono Takao, Yasuhide Ohno, Maehashi Kenzo, Inoue Koichi and Matsumoto Kazuhiko : Detection Kondo effect in Graphene Quantum Dots, The 43rd International Symposium on Compound Semiconductor, (都市), June 2016. ...
閲覧 Yoshiaki Taniguchi, Tsubasa Miki, Takanori Mitsuno, Yasuhide Ohno, Masao Nagase, Keiji Minagawa and Mikito Yasuzawa : Hydrophilic Graphene Film by Molecular Functionalization, The 43rd International Symposium on Compound Semiconductor, (都市), June 2016. ...
閲覧 Takanori Mitsuno, Yoshiaki Taniguchi, Yasuhide Ohno and Masao Nagase : Intrinsic pH Sensitivity of Graphene Field-Effect Transistors, The 43rd International Symposium on Compound Semiconductor, (都市), June 2016. ...
閲覧 Ono Takao, Kanai Yasushi, Yasuhide Ohno, Maehashi Kenzo, Inoue Koichi and Matsumoto Kazuhiko : An Application of Graphene Field Effect Transistor to Enzymatic Assay, The 43rd International Symposium on Compound Semiconductor, (都市), June 2016. ...
閲覧 Yasuhide Ohno, Takanori Mitsuno, Yoshiaki Taniguchi and Masao Nagase : Intrinsic ion sensitivity of graphene field-effect transistors, 2016 Workshop on Innovative Nanoscale Devices and Systems, (都市), Dec. 2016. ...
閲覧 D. Terasawa, A. Fukuda, A. Fujimoto, Yasuhide Ohno, Y. Kanai and K. Matsumoto : Relationship between conductance fluctuation and weak localization in graphene, Physical Review B, Vol.95, No.12, 125427, 2017. ...
閲覧 Taniguchi Yoshiaki, Milki Tsubasa, Yasuhide Ohno, Masao Nagase, Yukihiro Arakawa, Yasushi Imada, Keiji Minagawa and Mikito Yasuzawa : Intrinsic response of protein adsorption to graphene film on SiC substrate, Proceedings of 2017 International Conference on Solid State Devices and Materials, (都市), Sep. 2017. ...
閲覧 Yasuhide Ohno, Yoshiaki Taniguchi and Masao Nagase : Electrical characteristics of positively and negatively charged protein adsorption to epitaxial graphene film on SiC substrate, Proceedings of 2017 Workshop on Innovative Nanoscale Devices and Systems, (都市), Nov. 2017. ...
閲覧 Tung Thanh Nguyen, Tue Trong Phan, Lien Thi Ngoc Truong, Yasuhide Ohno, Maehashi Kenzo, Matsumoto Kazuhiko, Nishigaki Koichi, Biyani Manish and Takamura Yuzuru : Peptide aptamer-modified single-walled carbon nanotube-based transistors for high-performance biosensors, Scientific Reports, Vol.7, No.1, 17881, 2017. ...
閲覧 Kawata Takuya, Ono Takao, Kanai Yasushi, Yasuhide Ohno, Maehashi Kenzo, Inoue Koichi and Matsumoto Kazuhiko : Improved sensitivity of a graphene FET biosensor using porphyrin linkers, Japanese Journal of Applied Physics, Vol.57, No.6, 065103, 2018. ...
閲覧 Singh Rupesh, Kawahara Toshio, Ohmi Yuhsuke, Yasuhide Ohno, Maehashi Kenzo, Matsumoto Kazuhiko, Okamoto Kazumasa, Utsunomiya Risa and Yoshimura Masamichi : Effects of low temperature buffer on carbon nano walls growth, Materials Today. Communications, Vol.17, 94-99, 2018. ...
閲覧 Terasawa Daiju, Fukuda Akira, Fujimoto Akira, Yasuhide Ohno, Kanai Yasushi and Matsumoto Kazuhiko : Universal Conductance Fluctuation Due to Development of Weak Localization in Monolayer Graphene, Physica Status Solidi (B) Basic Solid State Physics : PSS, Vol.256, No.6, 1800515, 2019. ...
閲覧 Taniguchi Yoshiaki, Miki Tsubasa, Yasuhide Ohno, Masao Nagase, Yukihiro Arakawa, Yasushi Imada, Keiji Minagawa and Mikito Yasuzawa : Suppression of protein adsorption on a graphene surface by phosphorylcholine functionalization, Japanese Journal of Applied Physics, Vol.58, No.5, 055001, 2019. ...
閲覧 Taniguchi Yoshiaki, Miki Tsubasa, Yasuhide Ohno, Masao Nagase, Yukihiro Arakawa and Mikito Yasuzawa : Observation of the interaction between avidin and iminobiotin using a graphene FET on a SiC substrate, Japanese Journal of Applied Physics, Vol.58, No.SD, SDDD02, 2019. ...
閲覧 Kujime Takaya, Taniguchi Yoshiaki, Akiyama Daiu, Kawamura Yusuke, Yasuhide Ohno and Masao Nagase : High Stability of the epitaxial graphene film on SiC substrate, Proceedings of Compound Semiconductor Week 2019, MoP-1-10, (都市), May 2019. ...
閲覧 Yasuhide Ohno, Mitsuno Takanori, Taniguchi Yoshiaki and Masao Nagase : 1-aminopyrene-modified epitaxial graphene device for pH sensors, Proceedings of Compound Semiconductor Week 2019, TuC1-3, (都市), May 2019. ...
閲覧 Kujime Takaya, Taniguchi Yoshiaki, Akiyama Daiu, Kawamura Yusuke, Kanai Yasushi, Matsumoto Kazuhiko, Yasuhide Ohno and Masao Nagase : High Stability of Epitaxial Graphene on a SiC Substrate, Physica Status Solidi (B) Basic Solid State Physics : PSS, Vol.256, 1900357, 2019. ...
閲覧 谷口 嘉昭, 大野 恭秀, 永瀬 雅夫 : ホール効果測定によるSiC上グラフェンのタンパク質吸着特性評価, 2019年第80回応用物理学会秋季学術講演会, Vol.18p-E308-14, 2019年9月. ...
閲覧 杉山 良輝, 都 継瑶, 久次米 孝哉, 大野 恭秀, 永瀬 雅夫 : SiC上グラフェンの赤外線放射特性の観測, 2019年第80回応用物理学会秋季学術講演会, Vol.18a-E308-3, 2019年9月. ...

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無効な情報 (1件)

閲覧 Kohei Seike, Yusuke Fujii, Yasuhide Ohno, Kenzo Maehashi, Koichi Inoue and Kazuhiko Matsumoto : Floating-gated memory based on carbon nanotube field-effect transistors with Si floating dots, Japanese Journal of Applied Physics, Vol.53, No.6S1, 04EN07, 2015.

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Number of session users = 1, LA = 0.69, Max(EID) = 366567, Max(EOID) = 981878.