『徳島大学 教育・研究者情報データベース (EDB)』---[学外] /
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閲覧 Shiro Sakai : AlGaInN blue to UV LEDs and detectors, 2015 International Conference on Optoelectronics and Microelectronics, 2, (都市), July 215. ...
閲覧 酒井 士郎, 福井 萬壽夫, 入谷 忠光, 多田 修 : 単一キャパシティブプローブによるCdS中の電界分布の新しい測定法, 電子通信学会半導体トランジスタ研究会, Vol.SSD 77-1, (号), (頁), 1977年4月. ...
閲覧 Shiro Sakai, Masuo Fukui and Osamu Tada : Studies on acoustic domain and electric domain in CdS, The 6th International Conference on Internal Fruction and Ultrasonic Attenuation in Solids, (巻), (号), (頁), Tokyo, July 1977. ...
閲覧 Shiro Sakai, Masuo Fukui, Tadamitsu Iritani and Osamu Tada : New method for measurement of electric-field distribution on semiconductors, IEEE Transactions on Instrumentation and Measurement, Vol.IM-26, No.3, 267-269, 1977. ...
閲覧 Shiro Sakai, Masayoshi Umeno and Yoshifumi Amemiya : InGaAsP/InP Double- Heterostructure Photodiodes, Japanese Journal of Applied Physics, Vol.17, No.9, 1701-1703, 1978. ...
閲覧 Shiro Sakai, Masayoshi Umeno, Takahiro Aoki, Miharu Tobe and Yoshifumi Amemiya : InGaAsP/InP Native Oxide Stripe Lasers, Japanese Journal of Applied Physics, Vol.18, No.5, 1003-1004, 1979. ...
閲覧 Shiro Sakai, Takahiro Aoki, Yoshifumi Amemiya and Masayoshi Umeno : A New InGaAsP/InP Dual Wavelength LED, Applied Physics Letters, Vol.35, No.8, 588-589, 1979. ...
閲覧 Shiro Sakai, M. Umeno, T. Aoki, M. Tobe and Y. Amemiya : InGaAsP/InP Photodiodes Antireflectively Coated with InP Native Oxide, IEEE Journal of Quantum Electronics, Vol.QE-15, No.10, 1077-1078, 1979. ...
閲覧 酒井 士郎, 梅野 (名), 戸部 (名), 雨宮 (名) : ヘテロ接合光ダイオードの量子効率と高速応答特性に関する一考察, 電子通信学会論文誌 (C), Vol.62-C, No.10, 676-681, 1979年. ...
閲覧 梅野 (名), 酒井 士郎 : InGaAsP/InP系赤外線検出器, レーザ研究, Vol.7, No.3, 306-310, 1979年. ...
閲覧 酒井 士郎, 梅野 (名), 雨宮 (名) : 波長多重光通信用InGaAsP/InP光検出器, 電子通信学会論文誌 (C), Vol.62-C, No.11, 787-788, 1979年. ...
閲覧 酒井 士郎, M. Umeno, Y. Amemiya : Measurement of Diffusion Coefficient and Surface Recombination Velocity for p-InGaAsP Grown on InP, Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.19, No.1, 1980年. ...
閲覧 梅野 (名), 酒井 士郎 : InP上へのInGaAsP層の結晶成長とその光通信用光検出器への応用, 豊田研究報告, Vol.33, 30-36, 1980年. ...
閲覧 Shiro Sakai, M. Umeno and Y. Amemiya : Optimum Designing of InGaAsP/InP Wavelength Demultiplexing Photodiodes, Trans. IECE Jpn., Vol.E63, No.3, 192-197, 1980. ...
閲覧 M. Tobe, Shiro Sakai, M. Umeno and Y. Amemiya : New Wavelength- Demultiplexing InGaAsP/ InP Photodiodes, Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.Suppl.19-2, (号), 213-216, 1980. ...
閲覧 M. Tobe, Y. Amemiya, Shiro Sakai and M. Umeno : High-Sensitivity InGaAsP/InP Phototransistors, Applied Physics Letters, Vol.37, No.1, 73-75, 1980. ...
閲覧 Shiro Sakai and M. Umeno : Theoretical Analysis of New Wavelength-Division Solar Cells, Journal of Applied Physics, Vol.51, No.9, 5018-5024, 1980. ...
閲覧 Shiro Sakai and M. Umeno : Theoretical Analysis of Simplified Four Wavelength Division Solar Cell System, Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.20, No.1, 125-127, 1981. ...
閲覧 Shiro Sakai, T. Aoki, M. Tobe and M. Umeno : Simplified Dual Channel Optical Transmission Using Integrated Light Emitters And Photo- detectors, Japanese Journal of Applied Physics, Part 2 (Letters), Vol.20, No.3, L205-L207, 1981. ...
閲覧 酒井 士郎, 延原 (名), 梅野 (名) : MOCVD法によるGaAs, GaAlAsのエピタキシャル成長, 豊田研究報告, Vol.34, 16, 1981年. ...
閲覧 N. Ito, T. Uesugi, Shiro Sakai, M. Umeno and S. Hattori : InGaAsP/InP Wavelength Division Solar Cells, Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.20, No.Suppl. 20-2, 121-125, 1981. ...
閲覧 酒井 士郎 : 半導体レーザの周波数スペクトラムの微細構造, 名工大学報, Vol.33, 189-195, 1982年. ...
閲覧 Shiro Sakai, T. Aoki and M. Umeno : InGaAsP/InP Dual Wavelength Lasers, Electronics Letters, Vol.18, No.1, 17, 1982. ...
閲覧 Shiro Sakai, T. Aoki and M. Umeno : Dual Wavelength InGaAsP/InP TJS Lasers, Electronics Letters, Vol.18, No.1, 18, 1982. ...
閲覧 Naoki Wada, Shinichi Yoshimi, Shiro Sakai, Chun Lin Shao and Masuo Fukui : Stable Operation of AlGaAs/GaAs Light-Emitting Diodes Fabricated on Si Substrate, Japanese Journal of Applied Physics, Part 2 (Letters), Vol.31, No.2A, L78-L81, 1992. ...
閲覧 Naoki Wada, Koichi Iwabu, Shiro Sakai and Masuo Fukui : Photoluminescence-dark-spot-free AlGaAs grown on Si substrate, Applied Physics Letters, Vol.60, No.11, 1354-1356, 1992. ...
閲覧 Shiro Sakai, Yoshihiro Ueta and Yoji Terauchi : Band Gap Energy and Band Lineup of III-V Alloy Semiconductors Incorporating Nitrogen and Boron, Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.32, No.10, 4413-4417, 1993. ...
閲覧 Naoki Wada, Shiro Sakai and Masuo Fukui : Photoluminescence Dark Spot Dynamics in GaAs Grown on Si, Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.33, No.1B, 864-868, 1994. ...
閲覧 Naoki Wada, Shiro Sakai and Masuo Fukui : Thermal Stress and Dislocation Density in Undercut GaAs on Si, Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.33, No.2, 976-985, 1994. ...
閲覧 Naoki Wada, Shiro Sakai and Masuo Fukui : GaAs/AlGaAs Light Emitters Fabricated on Undercut GaAs on Si, Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.33, No.3A, 1268-1274, 1994. ...
閲覧 Yoshihiro Ueta, Hisao Sato, Shiro Sakai and Masuo Fukui : X-ray photoelectron spectroscopy study of GaN and GaP surfaces annealed in PH3 and NH3 and metalorganic chemical vapor deposition growth of GaN / GaP heterostructures, Journal of Crystal Growth, Vol.145, No.1-4, 203-208, 1994. ...
閲覧 Sadanojo Nakajima, Tao Yang and Shiro Sakai : Electronic Structure of Ga1-xInxN by the Tight-Binding Method with Nearest-Neighbor s,p and d and Second-Neighbor s and p Interactions, International Conference on Silicon Carbide and Rerated Materials-1995,Institute of Physics Conference Series, Vol.Number 142, (号), 947-950, 1995. ...
閲覧 Sadanojo Nakajima, Tao Yang and Shiro Sakai : Valence-Band-Edge Energy of Group-III, Nitride Alloy Semiconductors, Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.34, No.5, 2213-2215, 1995. ...
閲覧 酒井 士郎 : GaN系青色発光ダイオードの発明について, 日経エレクトロニクス, Vol.5, No.8, 228-229, 1995年5月. ...
閲覧 Tao Yang, Sadanojo Nakajima and Shiro Sakai : Electronic Structures of Wurtzite GaN, InN and their Alloy Ga1-xInxN Calculated by the Tight-Binding Method, Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.34, No.11, 5912-2921, 1995. ...
閲覧 Satoshi Kurai, Yoshiki Naoi, Toshimitsu Abe, Susumu Ohmi and Shiro Sakai : Photopumped Stimulated Emission from Homoepitaxial GaN Grown on Bulk GaN Prepared by Sublimation Method, Japanese Journal of Applied Physics, Part 2 (Letters), Vol.35, No.1B, 77-79, 1996. ...
閲覧 Satoshi Kurai, Toshimitsu Abe, Yoshiki Naoi and Shiro Sakai : Growth and Characterization of Thick GaN by Sublimation Method and Homoepitaxial Growth by MOCVD, Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.35, No.3, 1637-1640, 1996. ...
閲覧 Hiroyuki Naoi, Yoshiki Naoi and Shiro Sakai : MOCVD Growth of InAsN for Infrared Applications, Solid State Electronics, Vol.41, No.2, 319-321, 1997. ...
閲覧 Hisao Sato, Mihir Ranjan Sarkar, Yoshiki Naoi and Shiro Sakai : XPS Measurement of Valence Band Discontinuity at GaP/GaN Heterostructures, Solid State Electronics, Vol.41, No.2, 205-207, 1997. ...
閲覧 Satoshi Kurai, Katsushi Nishino and Shiro Sakai : Nucleation Control in the Growth of Bulk GaN by Sublimation Method, Japanese Journal of Applied Physics, Part 2 (Letters), Vol.36, No.2B, 184-186, 1997. ...
閲覧 Yang Tao, Sadanojo Nakajima and Shiro Sakai : Tight-Binding Calculation of Electronic Structures of InNAs Ordered Alloys, Japanese Journal of Applied Physics, Part 2 (Letters), Vol.36, No.3B, 320-322, 1997. ...
閲覧 Hisao Sato, Yoshiki Naoi and Shiro Sakai : X-Ray Diffraction Analysis of GaN and GaN/InGaN/GaN Double-Hetero Structures Grown on Sapphire Substrate by Metalorganic Chemical Vapor Deposition, Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.36, No.4A, 2018-2021, 1997. ...
閲覧 Hisao Sato, Yoshiki Naoi and Shiro Sakai : Structural analysis of GaN and GaN/InGaN/GaN DH Structures on Sapphire (0001) Substrate grown by MOCVD, Material Research Society Symposium Proc., Vol.449, (号), 441-446, 1997. ...
閲覧 酒井 士郎 : LEDディスプレイ, 映像情報メディア学会誌, (巻), No.4, (頁), 1997年4月. ...
閲覧 西野 克志, 酒井 士郎 : 昇華法によるGaN単結晶育成, 日本結晶成長学会誌, Vol.25, No.4, 19-24, 1998年4月. ...
閲覧 Jie Wang, Satoru Tottori, Hisao Sato, Maosheng Hao, Yasuhiro Ishikawa, Ken-ichi Yamashita and Shiro Sakai : Lateral Obergrowth of Thick GaN on Patterned GaN Substrate by Sublimation Technique, Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.37, No.8, 4475-4476, 1998. ...
閲覧 酒井 士郎 : GaNバルク結晶の育成とデバイス応用への展望, 応用物理学会誌, Vol.67, No.11, 1276-1280, 1998年11月. ...
閲覧 酒井 士郎 : III 族窒化物半導体,赤崎編著, 倍風館, (都市), 1999年1月. ...
閲覧 酒井 士郎 : InGaN/GaN 結晶のホモエピタキシャル成長およびヘテロエピタキシャル成長の研究, 電子情報通信学会論文誌(C), Vol.J82-C-I, No.4, 147-155, 1999年1月. ...
閲覧 Tao Wang, Tomoya Sugahara, Shiro Sakai and J Orton : The influence of the p-n junction induced electric field on the optical properties of InGaN/GaN/AlGaN light emitting diodes, Applied Physics Letters, Vol.74, (号), 1376-1378, 1999. ...
閲覧 Tao Wang, Mohamed Lachab, Daisuke Nakagawa, T Shirahama and Shiro Sakai : Investigation of Two Dimensional Electron Gas in AlGaN/GaN Heterostructures grown by MOCVD, Journal of Crystal Growth, Vol.203, (号), 443-446, 1999. ...
閲覧 Tao Wang, Daisuke Nakagawa, Mohamed Lachab, Tomoya Sugahara and Shiro Sakai : Optical investigation of InGaN/GaN multiple quantum wells, Applied Physics Letters, Vol.74, (号), 3128-3130, 1999. ...
閲覧 Shiro Sakai : InGaN GaN quantum well structures grown on bulk GaN and sapphire substrates, The Journal of the Korean Physical Society, Vol.34, (号), 220-223, 1999. ...
閲覧 Durga Basak, Mohamed Lachab, T Nakanishi and Shiro Sakai : Effect of Reactive Ion Etching on Yellow Luminescence of GaN, Applied Physics Letters, Vol.75, No.23, 3710-3712, 1999. ...
閲覧 Satoshi Kurai, Akira Kawabe, Taiichi Sugita, Shuichi Kubo, Yoichi Yamada, Tsunemasa Taguchi and Shiro Sakai : Excitonic emission under high excitation of hexagonal GaN single crystal grown by sublimation method, Japanese Journal of Applied Physics, Part 2 (Letters), Vol.38, No.2A, 102-104, 1999. ...
閲覧 Jie Wang, Masaaki Nozaki, Mohamed Lachab, Yasuhiro Ishikawa, Qhalid RS Fareed, Tao Wang, Maosheng Hao and Shiro Sakai : MOCVD selective growth and characterization of InGaN quantum dots, Applied Physics Letters, Vol.75, (号), 950-952, 1999. ...
閲覧 Jie Wang, Qhalid RS Fareed, Sourindra Mahanty, Satoru Tottori, Yasuhiro Ishikawa, Tomoya Sugahara, Y Morishima, Katsushi Nishino, Marek Osinski and Shiro Sakai : Lateral overgrowth mechanisms and microstructural characteristics of bulk-like GaN layers grown by sublimation method structures Substrates, Journal of Applied Physics, Vol.85, No.3, 1895-1899, 1999. ...
閲覧 Durga Basak, Kenji Yamashita, Tomoya Sugahara, Daisuke Nakagawa, Qhalid RS Fareed, Katsushi Nishino and Shiro Sakai : Selective etching of GaN over AlxGa1-xN using Reactive Ion Plasma of Cl2/CH4/Ar gas Mixture, Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.38, No.1A, 42-43, 1999. ...
閲覧 Kenji Shiojima, Tomoya Sugahara and Shiro Sakai : Large Schottky barriers for Ni/p-GaN contacts, Applied Physics Letters, Vol.74, No.14, 1936-1937, 1999. ...
閲覧 Jie Wang, Masaaki Nozaki, Yasuhiro Ishikawa, Mohamed Lachab, Qhalid RS Fareed, Tao Wang and Shiro Sakai : Formation and Optical Properties of Selectively Grown InGaN/GaN Nano-Structures, Inst. Phys. Conf. Ser., Vol.162, (号), 829-832, 1999. ...
閲覧 Tao Wang, Yuzo Ohno, Mohamed Lachab, Daisuke Nakagawa, T Shirahama, Shiro Sakai and Hideo Ohno : Electron mobility exceeding 104cm2/V.s in an AlGaN-GaN heterostructure grown on a sapphire substrate, Applied Physics Letters, Vol.74, No.23, 3531-3533, 1999. ...
閲覧 Eliseev G. Petr, Hong-Bo Sun, Saulius Juodkazis, Tomoya Sugahara, Shiro Sakai and Hiroaki Misawa : Laser-Induced Damage Threshold and Surface Processing of GaN at 400 nm Wavelength, Japanese Journal of Applied Physics, Part 2 (Letters), Vol.38, No.7, 839-841, 1999. ...
閲覧 Yoichi Yamada, Chiharu Sasaki, Yohei Yoshida, Satoshi Kurai, Tsunemasa Taguchi, Tomoya Sugahara, Katsushi Nishino and Shiro Sakai : Magneto-luminescence spectroscopy of excitonic transitions in homoepitaxial GaN layers, Physica Status Solidi (B) Basic Solid State Physics : PSS, Vol.216, No.1, 27-30, 1999. ...
閲覧 Hong-Bo Sun, Saulius Juodkazis, Peter G Eliseev, Tomoya Sugahara, Tao Wang, Shigeki Matsuo, Shiro Sakai and Hiroaki Misawa : Laser-induced Damage Threshold and Laser Processing of GaN, Proceedings of SPIE, Vol.3885, (号), 311-322, Osaka, Nov. 1999. ...
閲覧 Tao Wang, Yuzo Ohno, Mohamed Lachab, Daisuke Nakagawa, T Shirahama, Shiro Sakai and Hideo Ohno : MOCVD-Growth and Transport property investigation of two dimensional electron gas in AlGaN/GaN heterostructures on sapphire substrate, Physica status solidi (b), Vol.216, No.1, 743-748, 1999. ...
閲覧 Tao Wang, Daisuke Nakagawa, Mohamed Lachab, Tomoya Sugahara and Shiro Sakai : Investigation of optical properties in InGaN/GaN mutiple quantum well and single quantum well, Physica status solidi (b), Vol.216, No.1, 279-285, 1999. ...
閲覧 Tomoya Sugahara, Shiro Sakai, Qhalid RS Fareed, Satoru Tottori, Mohamed Lachab and Tao Wang : Investigation of InGaN/GaN QWs grown on sapphire and bulk GaN substrates, Physica status solidi (b), Vol.216, No.1, 273-277, 1999. ...
閲覧 Tao Wang, Tomoya Sugahara, Hong-Bo Sun, Hong X Wang, Jie Bai, Shiro Sakai and Hiroaki Misawa : The Influence of Buffer Layer and Growth Temperature on the Quality of Undoped GaN Layer Grown Sapphire Substrate by Metal Organic Chemical Vepor Deposition, Applied Physics Letters, Vol.76, (号), 2220-2222, 2000. ...
閲覧 酒井 士郎 : 映像情報メデアハンドブック, (発行所), (都市), 2000年1月. ...
閲覧 酒井 士郎 : GaN系結晶のバルクおよびエピタキシャル成長, 日本結晶成長学会誌, Vol.27, No.4, 194-202, 2000年1月. ...
閲覧 酒井 士郎 : LEDの動作原理と材料, デスプレイアンドイメージング, Vol.8, (号), 103-113, 2000年1月. ...
閲覧 Tao Wang, Y Morishima, N Naoi and Shiro Sakai : A new method for a great reduction of dislocation density in a GaN layer on a sapphire substrate, Journal of Crystal Growth, Vol.213, (号), 188-192, 2000. ...
閲覧 Tao Wang, Jie Bai, Shiro Sakai, Yuzo Ohno and Hideo Ohno : Magneto-transport studies of AlGaN/GaN heterostructures grown on sapphire substrates: Effective mass and scattering time, Applied Physics Letters, Vol.76, No.19, 1-3, 2000. ...
閲覧 Tao Wang, Hisayuki Saeki, Jie Bai, Mohamed Lachab, T Shirahama and Shiro Sakai : Effect of silicon-doping on the optical and transport properties of InGaN/GaN multiple quantum well structuresscattering time, Applied Physics Letters, Vol.76, No.13, 1737-1739, 2000. ...
閲覧 Tao Wang, Daisuke Nakagawa, Hong-Bo Sun, Hong X Wang, Jie Bai, Shiro Sakai and Hiroaki Misawa : The influence of buffer layer and growth temperature on the quality of undoped GaN layer grown on sapphire substrate by MOCVDstructuresscattering time, Applied Physics Letters, Vol.76, No.16, 2220-2222, 2000. ...
閲覧 Qhalid RS Fareed, S Juodkazis, Sung-Hoon Chung, Tomoya Sugahara and Shiro Sakai : Structural studies on MOCVD grown GaN and AlGaN using atomic force microscopy, Materials Chemistry and Physics, Vol.64, (号), 260-264, 2000. ...
閲覧 Mohamed Lachab, D-H Youn, Qhalid RS Fareed, Tao Wang and Shiro Sakai : Characterization of Mg-doped GaN Grown by Metaloragnic Chemical Vapor deposition, Solid State Electr, Vol.44, No.9, 260-264, 2000. ...
閲覧 P Li, Soo-Jin Chua, Maosheng Hao, W Wang, X Zhang, Tomoya Sugahara and Shiro Sakai : The formation of In-rich regions at the perphery of the inverted hexahonalpits of InGaN thin-films grown by metalorganic vapor phase epitaxy, MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, Vol.5, Suppl. 1, (号), 580-585, 2000. ...
閲覧 Hong X Wang, Tao Wang, Sourindra Mahanty, F Komatsu, T Inaoka, Katsushi Nishino and Shiro Sakai : Growth of GaN layer by metallorganic vapor deposition system with a novel three-flow reactor, Journal of Crystal Growth, Vol.218, (号), 148-154, 2000. ...
閲覧 H Naoi, D M Shaw, G J Collins and Shiro Sakai : Heteroepitaxial growth of InAs by low-pressure metalorganic chemical vapor deposition employing in situ generated arsine radicals, Journal of Crystal Growth, Vol.219, (号), 481-484, 2000. ...
閲覧 Petr G Eliseev, Marek Osinski, Jinhyun Lee, Tomoya Sugahara and Shiro Sakai : Band-tail model and temperature-induced blue-shift in photoluminescence spectra of InxGa1-xN grown on sapphire, Journal of Electronic Materials, Vol.29, No.3, 332-341, 2000. ...
閲覧 Durga Basak, Katsushi Nishino, Qhalid RS Fareed and Shiro Sakai : Characterization of RIE etched surface of GaN using methane gas with chlorine plasma, Journal of Vacuum Science & Technology B, Vol.18, No.5, 2491-2494, 2000. ...
閲覧 Saulius Juodkazis, Petr G. Eliseev, Mitsuru Watanabe, Hong-Bo Sun, Shigeki Matsuo, Tomoya Sugahara, Shiro Sakai and Hiroaki Misawa : Annealing of GaN-InGaN MQW: Correlation between the Bandgap and Yellow Photoluminescence, Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.39, No.2, 393-396, 2000. ...
閲覧 Yoichi Yamada, Chiharu Sasaki, Yohei Yoshida, Satoshi Kurai, Tsunemasa Taguchi, Tomoya Sugahara, Katsushi Nishino and Shiro Sakai : Optical properties of bound excitons and biexcitons in GaN, IEICE Transactions on Electronics, Vol.E83-C, No.4, 605-611, 2000. ...
閲覧 Tomoya Sugahara and Shiro Sakai : Role of dislocation in InGaN/GaN quantum wells grown on bulk GaN and sapphire substrates, IEICE Transactions on Electronics, Vol.E83-C, No.4, 598-604, 2000. ...
閲覧 Durga Basak, T Nakanishi and Shiro Sakai : Reactive ion etching of GaN using BCl3,BCl3/Ar and BCl3/N2 gas plasmas, Solid-State Electronics, Vol.44, No.4, 725-728, 2000. ...
閲覧 F P Fewster, L N Andrew, H O Hughes, C Staddon, T C Foxon, A Bell, S T Cheng, Tao Wang, Shiro Sakai, K Jacobs and I Moerman : X-ray studies of group III-nitride quantum wells with high quality interfaces, Journal of Vacuum Science & Technology B, Vol.18, No.4, 2300-2303, 2000. ...
閲覧 Jie Bai, Tao Wang and Shiro Sakai : Influence of the quantum-well thickness on the radiative recombination of InGaN/GaN quantum well structuresSubstrates, Journal of Applied Physics, Vol.88, No.8, 4729-4733, 2000. ...
閲覧 J A Davidson, P Dawson, Tao Wang, Tomoya Sugahara, J W Orton and Shiro Sakai : Photoluminescence Studies of InGaN/GaN Multi-Quantum wellsstructuresSubstrates, Semiconductor Science and Technology, Vol.15, No.6, 497-505, 2000. ...
閲覧 Yasuo Nakanishi, Akihiro Wakahara, Akira Yoshida, Takeshi Ohsima, Hisayoshi Itoh and Shiro Sakai : Photoluminescence Properties of Eu-doped GaN by Ion Implantation, IPAP Conf. Ser, Vol.1, (号), 486-489, 2000. ...
閲覧 Yves Lacroix, T Nakanishi and Shiro Sakai : In-Situ Etch-Layer Monitoring of GaN Based Laser Diode Structure, IPAP Conf. Ser, Vol.1, (号), 782-785, 2000. ...
閲覧 Yves Lacroix, Sung-Hoon Chung and Shiro Sakai : Cracking of GaN on Sapphire from Induced Non-Uniformity in Residual Stress, IPAP Conf. Ser, Vol.1, (号), 479-481, 2000. ...
閲覧 Tao Wang, Jie Bai and Shiro Sakai : Comparison of the Optical Properties in InGaN/GaN Quantum Well Structures Grown on (0001) and (11-20) Sapphire Substrates, IPAP Conf. Ser, Vol.1, (号), 382-385, 2000. ...
閲覧 Tao Wang, Jie Bai and Shiro Sakai : The Investigation on the Emission Mechanism of InGaN/GaN Quantum Well Structure, IPAP Conf. Ser, Vol.1, (号), 524-527, 2000. ...
閲覧 Takayuki Sawada, Yuji Itoh, Naohito Kimura, Kazuaki Imai, Kazuhiko Suzuki and Shiro Sakai : Influence of Inhomogeneous Barrier on I-V Characteristics of Metal/GaN Schottky Diode, IPAP Conf. Ser, Vol.1, (号), 801-804, 2000. ...
閲覧 Hong X Wang and Shiro Sakai : The Influence of the Low-Temperature Buffer-Layer on Substrate-Induced Biaxial Compressive Stress in a GaN Film on a Sapphire Substrate, IPAP Conf. Ser, Vol.1, (号), 144-146, 2000. ...
閲覧 Shiro Sakai, Hisayuki Saeki, Yuji Izumi and Tao Wang : Indium silicon co-doping in AlGaN/GaN multiple quantum wells, IPAP Conf. Ser, Vol.1, (号), 637-639, 2000. ...
閲覧 Sadanojo Nakajima, Daisuke Ikeda and Shiro Sakai : Electronic Structures of GaNP and InNAs Ordered Alloys Calculated by the Pseudopotential Method, IPAP Conf. Ser, Vol.1, (号), 441-443, 2000. ...
閲覧 Kenji Shiojima and Shiro Sakai : Large Schottky Barriers and Memory Capability for Ni Contacts Formed on Low Mg-Doped p-GaN, IPAP Conf. Ser, Vol.1, (号), 829-832, 2000. ...
閲覧 池田 大輔, 中島 貞之丞, 酒井 士郎 : 擬ポテンシャル法による GaNP,InNAs 規則合金の電子構造の解析, 電気関係学会四国支部連合大会講演論文集, (巻), (号), 24, 2000年10月. ...
閲覧 Sadanojo Nakajima, Daisuke Ikeda and Shiro Sakai : Electronic Structures of GaNP and InNAs Ordered Alloys Calculated by the Pseudopotential Method, Proceedings of International Workshop on Nitride Semiconductors, (巻), (号), 441-443, Nagoya, Nov. 2000. ...
閲覧 Shiro Sakai, Tao Wang, Y Morishima and Yoshiki Naoi : A New Method of Reducing Dislocation Density in GaN Layer Grown on Sapphire Substrate by MOVPE, Journal of Crystal Growth, Vol.221, No.1, 334-337, 2000. ...
閲覧 Kenji Shiojima, Tomoya Sugahara and Shiro Sakai : Current transport mechanism of p-GaN Schottky contactssubstrate by MOCVDstructuresscattering time, Applied Physics Letters, Vol.77, No.26, 4353-4355, 2000. ...
閲覧 Tao Wang, Jie Bai, Shiro Sakai and J K Ho : Investigation of the emission mechanism in InGaN/GaN-based light-emitting diodes, Applied Physics Letters, Vol.78, (号), 2617, 2001. ...
閲覧 Tao Wang, Jie Bai and Shiro Sakai : Modulation-doping influence on the photoluminescence from the two-dimensional electron gas of AlGaN/GaN heterostructures, Physical Review B, Condensed Matter and Materials Physics, Vol.63, (号), 205320, 2001. ...
閲覧 Tao Wang, Jie Bai and Shiro Sakai : Influence of InGaN/GaN quantum-well structure on the performance of light-emitting diodes and laser diodes grown on sapphire substrate, Journal of Crystal Growth, Vol.224, No.1/2, 5-10, 2001. ...
閲覧 J K Lee, J J Harris, J A Kent, Tao Wang, Shiro Sakai, D K Maude and C J Portal : Investigation of phonon emission processes in an AlGaN/GaN heterostructure at low temperatures, Applied Physics Letters, Vol.78, No.19, 2893-2895, 2001. ...
閲覧 Yves Lacroix, Sung-Hoon Chung and Shiro Sakai : Cracking of GaN on sapphire from etch-process-induced nonuniformity in residual thermal stress, Journal of Applied Physics, Vol.89, No.11, 6033-6036, 2001. ...
閲覧 J J Harris, J K Lee, D K Maude, J C Portal, Tao Wang and Shiro Sakai : Relationship between classical and quantum lifetimes in AlGaN/GaN heterostructures, Semiconductor Science and Technology, Vol.16, No.5, 402-405, 2001. ...
閲覧 Jie Bai, Yuji Izumi, Tao Wang and Shiro Sakai : A Study of dislocations in InGaN/GaN multiple-quantum-well structure grownon (11-20) sapphire substrate, Journal of Crystal Growth, Vol.223, No.1-2, 61-68, 2001. ...
閲覧 Jie Bai, Tao Wang and Shiro Sakai : Investigation of the strain-relaxation in InGaN/GaN multiple-quantum-well structures, Journal of Applied Physics, Vol.90, No.4, 1740-1744, 2001. ...
閲覧 Hiroyuki Naoi, Denis M Shaw, Yoshiki Naoi, G J Collins and Shiro Sakai : Growth of InNAs by low-pressure metalorganic chemical vapor deposition employing microwave-cracked nitrogen and in situ generated arsine radicals, Journal of Crystal Growth, Vol.222, No.3, 511-517, 2001. ...
閲覧 Jie Bai, Tao Wang and Shiro Sakai : Study of the strain relaxation in InGaN/GaN multiple quantum well atructures, Journal of Applied Physics, Vol.90, No.4, 1740-1744, 2001. ...
閲覧 J J Harris, J K Lee, Tao Wang, Shiro Sakai, Z Bougrioua, I Moerman, J E Thrush, B J Webb, H Tang, T Martin, K D Maude and C J Portal : Phase giagram for the quantum Hall effect in a high-mobility AlGaN/GaN heterostructure, Journal of Physics: Condensed Matter, Vol.13, No.8, 175-181, 2001. ...
閲覧 Jie Bai, Tao Wang, Hong-Dong Li, Nan Jiang and Shiro Sakai : (0001) oriented GaN epilayer grown on (11-20) sapphire by MOCVD, Journal of Crystal Growth, Vol.231, No.1-2, 41-47, 2001. ...
閲覧 Hong X Wang, Y Amijima, Yasuhiro Ishihama and Shiro Sakai : Influence of carrier gas on the morphology and structure of GaN layers grown on sapphire substrate by six-wafer metal organic chemical vapor deposition system, Journal of Crystal Growth, Vol.233, No.4, 681-686, 2001. ...
閲覧 Jie Bai, Tao Wang and Shiro Sakai : Photoluminescence study on InGaN/GaN quantum-well structure grown on (11-20) sapphire substrate, Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.40, No.7, 4445-4449, 2001. ...
閲覧 Hongdong Li, Tao Wang, Yves Lacroix, Nan Jiang and Shiro Sakai : Influence of Inversion Domains on Formation of V-Shaped Pits in GaN Films, Japanese Journal of Applied Physics, Part 2 (Letters), Vol.40, (号), 1254-1256, 2001. ...
閲覧 Shiro Sakai, Tao Wang, Hong X Wang, Jie Bai and Tomoya Sugahara : MOCVD growth of wide-bandgap nitride semiconductors, SPIE Photonic West, Critical Review on GaN and Related Materials, Vol.83, (号), 47-76, San Jose, Jan. 2002. ...
閲覧 Tao Wang, Yu-Huai Liu, Young-Bae Lee, Yuji Izumi, Jin-Ping Ao, Jie Bai, Hong-Dong Li and Shiro Sakai : Fabrication of high performance of AlGaN/GaN-based UV light-emitting diodes, Journal of Crystal Growth, Vol.235, No.1, 177-182, 2002. ...
閲覧 Hong X Wang, Y Amijima, Yasuhiro Ishihama and Shiro Sakai : The development of a novel three-flow six-wafer reactor of metal-organic chemical vapor deposition system for GaN-based structure, Journal of Crystal Growth, Vol.235, No.1, 173-176, 2002. ...
閲覧 塩島 謙次, 酒井 士郎 : 金属/p-GaN 電極界面の電流輸送機構の理解, 応用物理学会誌, Vol.71, No.3, 340-341, 2002年. ...
閲覧 中島 貞之丞, 池田 大輔, 岡 賢治, 酒井 士郎 : 六方晶系 GaNAs 規則合金のバンド構造の解析, 電子情報通信学会総合大会, (巻), (号), 14, 2002年3月. ...
閲覧 Kazuhide Sumiyoshi, Masashi Tsukihara, Fawang Yan and Shiro Sakai : AlGaN Films grown on trenched sapphire substrates using a low-temperature GaNP buffer layer by MOCVD, 6th international conference on nitride semiconductors, (巻), (号), Tu-P-089, Bremen, Germany, Aug. 2005. ...
閲覧 住吉 和英, 酒井 士郎, 直井 美貴, 西野 克志 : 窒化物半導体と紫外発光デバイス, 第7回IEEE広島支部学生シンポジウム(HISS), 2005年11月. ...
閲覧 Y Sumiyoshi, Masashi Tsukihara, Ken Kataoka, Kiyoshi Okimoto, Shuichi Kawamichi, Yoshiki Naoi and Shiro Sakai : High-quality AlGaN film grown on the patterned sapphire substrate using a low-temperature intermediate layer by MOCVD, International COE Workshop on Nano Processes and Devices, and Their Applications, (巻), (号), 75-76, Nagoya University, Dec. 2005. ...
閲覧 酒井 士郎, 高橋 清,他 : ワイドギャップ半導体光・電子デバイス, 森北出版株式会社, (都市), 2006年2月. ...
閲覧 Shuichi Kawamichi, Katsushi Nishino, Kazuhide Sumiyoshi, Masashi Tsukihara, Fanwang Yan and Shiro Sakai : Inversion domain in AlGaN films grown on patterned sapphire substrate, Journal of Crystal Growth, Vol.298, (号), 297-299, 2007. ...
閲覧 Katsushi Nishino, A. Sakamoto and Shiro Sakai : Growth of thich a-plane GaN on r-plane sapphire by direct synthesis method, Physica Status Solidi (C) Current Topics in Solid State Physics, Vol.4, No.7, 2532-2535, 2007. ...
閲覧 Yoshiki Naoi, K. Ikeda, T. Hama, K. Ono, R. Choi, T. Fukumoto, Katsushi Nishino, Shiro Sakai, S. M. Lee and M. Koike : Blue light emitting diode fabricated on a-plane GaN film over r-sapphire substrate and on a-plane bulk GaN substrate, Physica Status Solidi (C) Current Topics in Solid State Physics, Vol.4, No.7, 2810-2813, 2007. ...
閲覧 Kazuhide Sumiyoshi, Masashi Tsukihara, Ken Kataoka, Shuichi Kawamichi, Tadashi Okimoto, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai : Al0.17Ga0.83N film with Middle Temperature Intermediate Layer Grown on Trenched Sapphire Substrate by MOCVD, Journal of Crystal Growth, Vol.298, No.SI, 300-304, 2007. ...
閲覧 Shiro Sakai, Kiyoshi Takahash and al. et : Wide Bandgap Semiconductors, Nippon Gakujyutsu-shinnkoukai, (都市), Feb. 2007. ...
閲覧 酒井 士郎, : 化合物半導体の最新技術 大全集, 株式会社 技術情報協会, 東京, 2007年4月. ...
閲覧 酒井 士郎 : 短波長LEDチップを用いた白色照明, 光学, Vol.38, No.3, 127-131, 2009年3月. ...
閲覧 Y. Yoshida, K. Hara, Yoshiki Naoi and Shiro Sakai : MOCVD-GaN growth on separated GaN from sapphire using Tantalium, Asia-Pacific Workshop on Widegap Semiconductors, No.We-P47, 321-322, Toba( Mie, Japan), May 2011. ...
閲覧 酒井 士郎 : 半導体発光デバイスの現状, 日本画像学会誌, Vol.191, No.3, 238-245, 2011年6月. ...
閲覧 F. Horie, Y. Ohnishi, Y. Naoi, S. Sakai : Heterostructure Formation on AlC/Sapphire Substrate, 30th Electronic Materials Symposium, Th2-16, 2011年6月. ...
閲覧 谷本 勝, 酒井 士郎 : SiO2マスクを用いたMOCVD-GaNの転位密度低減に関する研究, 電子情報通信学会技術研究報告 電子デバイス, Vol.111, No.290, 15-18, 2011年11月. ...
閲覧 大西 裕也, 堀江 郁哉, 酒井 士郎 : MOCVD法によるsapphire上への(Si)(Ga)AlC(P)薄膜の成長, 電子情報通信学会技術研究報告 電子デバイス, Vol.111, No.290, 117-120, 2011年11月. ...
閲覧 Shogo Wada, Fumiya Horie and Shiro Sakai : Optimum temperature to grow nano-AlC on sapphire by metalorganic chemical vapor deposition, 4th Int. Symp. on Advanced Plasma Science and its Application for Nitride and Nanomaterls, (都市), March 2012. ...
閲覧 大西 裕也, 堀江 郁哉, 酒井 士郎 : MOCVD法によるSi,Ga,P添加Al4C3薄膜の成長, 第59回応用物理学会関係連合講演会, 2012年3月. ...
閲覧 Dohyung Kim, Fumiya Horie, Yuya Ohnishi, Yoshiki Naoi and Shiro Sakai : Characteristics of Si and P-doped Al4C3 by Metalorganic Vapor Phase Epitaxy, The Sixteenth International Conference on Metal Organic Vapor Phase Epitaxy, TuP-71, Busan, May 2012. ...
閲覧 Yun-Jeong Choi, Takunari Fujimoto, Fumiya Horie, Yoshiki Naoi and Shiro Sakai : Growth of Diamond like Carbon Film with Phosphorus Incorporation Using CVD Technique, The Sixteenth International Conference on Metal Organic Vapor Phase Epitaxy, FrA2-2, Busan, Korea, May 2012. ...
閲覧 Yuya Ohnishi, Dohyung Kim and Shiro Sakai : Growth of AlC on sapphire, Silicon and SiC substrates, 第31回電子材料シンポジウム, We2-5, July 2012. ...
閲覧 金 度亨, 李 熙燮, 山住 和也, 直井 美貴, 酒井 士郎 : AlxCy によるAlXGa1-xN 中への拡散, 第73回応用物理学会学術講演会, 12p-H9-15, 2012年9月. ...
閲覧 李 熙燮, 金 度亨, 山住 和也, 酒井 士郎 : AlCによるAlGaNへのp型ドーピング, 第73回応用物理学会学術講演会, 12p-H9-16, 2012年9月. ...
閲覧 Dohyung Kim, Heesub Lee, Kazuya Yamazumi, Yoshiki Naoi and Shiro Sakai : Fabrication of C-doped p-AlGaInN LED by the insertion of Al4C3, International Workshop on Nitride Semiconductor 2012, TuP-OD-1, Sapporo, Oct. 2012. ...
閲覧 金 度亨, 李 熙燮, 山住 和也, 西野 克志, 酒井 士郎 : 炭素(C)ドープAlGaN のP 型化のメカニズム, 第60 回応用物理学会春季学術講演会 講演予稿集, (巻), (号), 28p-PA1-29, 2013年3月. ...
閲覧 Yuya Ohnishi, Dohyung Kim and Shiro Sakai : Photo-induced Current in AlC/ Sapphire Grown by Metalorganic Chemical Vapor Deposition, 6th Int. Symp. on Control of Semiconductor Interfaces, (号), P2-17, Fukuoka, Japan, July 2013. ...
閲覧 金 度亨, 沖 竜二, 酒井 士郎 : Al4C3/Al2O3 (0001)の光誘起電流(PIC)の特性, 第74回応用物理学会秋季学術講演会 講演予稿集, (巻), (号), 17p-P9-2, 2013年9月. ...
閲覧 中田 駿介, 李 熙燮, 酒井 士郎 : Ta(タンタル)を用いたGaN(窒化ガリウム)の剥離およびマスクの検討, 平成25年度 電気関係学会四国支部連合大会, 11-6, 2013年9月. ...
閲覧 沖 竜二, 金 度享, 川本 祐嗣, 酒井 士郎 : Mg:AlC における光誘起電流, 平成25年度 電気関係学会四国支部連合大会, (巻), (号), 11-4, 2013年9月. ...
閲覧 Dohyung Kim, Heesub Lee, Kazuya Yamazumi, Yoshiki Naoi and Shiro Sakai : Fabrication of C-Doped p-AlGaInN Light-Emitting Diodes by the Insertion of Al4C3, Japanese Journal of Applied Physics, Vol.52, No.8S, 08JG18-1-08JG18-5, 2013. ...
閲覧 Dohyung Kim, Yuya Onishi, Ryuji Oki and Shiro Sakai : Photo-induced Current and Degradation in Al4C3/Al2O3 (0001) Grown by Metalorganic Chemical Vapor Deposition, Thin Solid Films, Vol.557, (号), 216-221, 2014. ...
閲覧 SHUNSUKE NAKATA, Shiro Sakai and Heesub Lee : InGaN on Ta-GaN on sapphire substarte switched to the alternative Si wafer, 6th Int. Symp. On Advanced Plasma Science and its Application for Nitrides and Nanomaterals (ISPlasma2014), (巻), (号), 06aP33, Nagoya Japan, March 2014. ...
閲覧 K. Yamazumi, D. Kim, M. Sekiguchi and Shiro Sakai : C-Related p-Type Conduction in AlGaN and AlN, LEDIA'14, (巻), (号), 24p-LEDp6-7, (都市), April 2014. ...
閲覧 Shiro Sakai : InGaAlN LED and C-related P-type Conductivity in AlGaN, 2014 International Symposium on Single Crystal Diamond Electronics (SCDE) and the Fourth Chinese Vacuum Forum (CVF), Xi'an, China, June 2014. ...
閲覧 福永 寛, 酒井 士郎 : 基板の裏面を加工及び追加したInGaN系LED, 電気関係学会四国支部連合大会, (巻), (号), 11-2, 2014年9月. ...
閲覧 堰口 正啓, 金 度亨, 沖 竜二, 酒井 士郎 : AlC拡散によるAlGaN表面の変化, 電気関係学会四国支部連合大会講演論文集, (巻), (号), 11-1, 2014年9月. ...
閲覧 川本 祐介, 酒井 士郎 : 陽極酸化によるAlGaInN-LEDの光取り出し効率の向上, 電子情報通信学会ソサイエティ大会講演論文集, (巻), (号), c-4-33, 2014年9月. ...
閲覧 Hiroshi Fukunaga, Shiro Sakai, Masataka Muguruma, S. Nohda, M. Kimura and Y. Muramoto : A Novel Method to Generate Different Wavelength of InGaN-LED in the Same Wafer, 10th International Symposium on Semiconductor Light Emitting Devices, (巻), (号), Th-O63, Taiwan, Dec. 2014. ...
閲覧 H. Fukunaga, M. Muguruma, Shiro Sakai, S. Nohda, M. Kimura and Y. Muramoto : A Temperature Gradient Method in InGaN/GaN LEDs Manufacturing, International Forum on Advanced Technologies, (巻), (号), 20, Tokushima, Japan, March 2015. ...
閲覧 H. Fukunaga, Shiro Sakai, S. Noda, M. Kimura and Y. Muramoto : A Temperature Gradient Method Applied to Visible or Near-Ultraviolet InGaN/GaN LEDs, 7th Asia-Pacific Workshop on Widegap Semiconductors, (巻), (号), TTUP2-24, Seoul, Korea, May 2015. ...
閲覧 Shiro Sakai : AlGaInN blue to UV LEDs and detectors, 2015 International Conference on Optoelectronics and Microelectronics, (巻), (号), 2, (都市), July 2015. ...
閲覧 六車 正哉, 酒井 士郎, 納田 卓, 木村 真大, 村本 宜彦 : トンネル接合を用いたInGaN/GaN 多波長LED, 2015年度応用物理・物理系学会中国四国支部合同学術講演会, 16, 2015年8月. ...
閲覧 川西 洋平, 酒井 士郎 : MOCVDを用いたGaN/SapphireへのGeドーピング, 電気関係学会四国支部合同学術講演会, (巻), (号), (頁), 2015年9月. ...
閲覧 H. Fukunaga, Shiro Sakai, S. Noda, M. Kimura and Y. Muramoto : A Temperature Gradient Method Applied to Visible or Near-Ultraviolet InGaN/GaN LEDs, 6th International Symposium on Growth of III-Nitrides (ISGN-6), (巻), (号), Tu-A49, Hamamatsu, Japan, Nov. 2015. ...
閲覧 Shiro Sakai : InGaAlN Multi-wavelength LEDs, 2016 10th Int. Conf. on New Diamond and Nano Carbons, (巻), (号), 180, Xi'an, China, May 2016. ...
閲覧 Shiro Sakai : AlGaInN LEDs with a Temperature Gradient Method, BIT's 5th annual world congress of advanced materials-2016, (巻), (号), 164, Chongqing, China, June 2016. ...
閲覧 平田 朋也, 酒井 士郎, 納田 卓, 木村 真大, 村本 宜彦 : 中間板を用いたMOCVD-InGaN/GaN 四波長LED, 第77回 応用物理学会秋季学術講演会 講演予稿集, (巻), (号), 14a-A21-2, 2016年9月. ...
閲覧 川西 洋平, 酒井 士郎 : MOCVDを用いた,GeドープAlGaNの成長, 第77回 応用物理学会秋季学術講演会 講演予稿集, (巻), (号), 16a-P5-26, 2016年9月. ...
閲覧 Shiro Sakai : Multi-wavelength AlGaInN-LEDs, Collaborative Conference on Materials Research, (巻), (号), 422, Jeju island, South Korea, June 2017. ...

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無効な情報 (12件)

閲覧 M Hao, S Mahanty, Y Morishima, H Takenaka, J Wang, S Tottori, M Nozaki, T Sugahara, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai : Stacking fault and its effect in epitaxial growth of GaN, Inst. Phys. Conf. Ser., Vol.162, No.12, 675-680, 1999.
閲覧 Jie Bai, Hong-Dong Li, Nan Jiang, Tao Wang and Shiro Sakai : (0001) oriented GaN epilayer grown on (11-20) sapphire by MOCVD, Journal of Crystal Growth, Vol.231, No.1-2, 41-47, 2001.
閲覧 大西 裕也, 堀江 郁哉, 酒井 士郎 : MOCVD法によるSi,Ga,P添加Al4C3薄膜の成長, 第59回応用物理学会関係連合講演会, (巻), (号), (頁), 2012年3月.
閲覧 Kim Dohyung, Horie Fumiya, Onishi Yuya, Yoshiki Naoi and Shiro Sakai : Characteristics of Si and P-doped Al4C3 by Metalorganic Vapor Phase Epitaxy, The Sixteenth International Conference on Metal Organic Vapor Phase Epitaxy, TuP-71, (都市), May 2012.
閲覧 Choi Jeong Yun, Fujimoto Takunari, Horie Fumiya, Yoshiki Naoi and Shiro Sakai : Growth of Diamond like Carbon Film with Phosphorus Incorporation Using CVD Technique, The Sixteenth International Conference on Metal Organic Vapor Phase Epitaxy, (巻), (号), FrA2-2, Busan, Korea, May 2012.
閲覧 Shiro Sakai, Kim Dohyung, Lee Heesub and Yoshiki Naoi : High Temperature Diffusion of AlC in AlGaN, National Taiwan University, (巻), (号), PT01, Fullon Hotel Danshuei Fishermen's Wharf, Taiwan, May 2013.
閲覧 Kim Dohyung, Onishi Yuya, Oki Ryuji and Shiro Sakai : Photo-induced Current and Degradation in Al4C3/Al2O3 (0001) Grown by Metalorganic Chemical Vapor Deposition, Thin Solid Films, Vol.557, (号), 216-221, 2014.
閲覧 Yamazumi K., Kim D., Sekiguchi M. and Shiro Sakai : C-Related p-Type Conduction in AlGaN and AlN, LEDIA'14, 24p-LEDp6-7, (都市), April 2014.
閲覧 Shiro Sakai : InGaAlN LED and C-related P-type Conductivity in AlGaN, (誌名), (巻), (号), (頁), (都市), June 2014.
閲覧 Dohyung Kim and Shiro Sakai : High temperature diffusion in AlxGa1-xN and p-type AlGaN, International Journal of Materials Science and Applications, Vol.3, No.5, 177-182, 2014.
閲覧 Fukunaga H., Muguruma M., Shiro Sakai, Nohda S., Kimura M. and Muramoto Y. : A Temperature Gradient Method in InGaN/GaN LEDs Manufacturing, International Forum on Advanced Technologies, (巻), (号), 20, Tokushima, Japan, March 2015.
閲覧 Shiro Sakai : AlGaInN blue to UV LEDs and detectors, 2015 International Conference on Optoelectronics and Microelectronics, 2, (都市), July 2015.

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