著作: 曽根田 伴奈/[橋爪 正樹]/[四柳 浩之]/Lu Shyue-Kung/Electrical Field Test Method of Resistive Open Defects between Dies by Quiescent Currents through Embedded Diodes/Proc. of The IEEE 2019 International 3D Systems Integration Conference/[橋爪 正樹]/[四柳 浩之]
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| 種別 | 必須 | 国際会議 | |||
|---|---|---|---|---|---|
| 言語 | 必須 | 英語 | |||
| 招待 | 推奨 | ||||
| 審査 | 推奨 | Peer Review | |||
| カテゴリ | 推奨 | 研究 | |||
| 共著種別 | 推奨 | 国際共著(徳島大学内研究者と国外研究機関所属研究者との共同研究) | |||
| 学究種別 | 推奨 | 博士前期課程学生による研究報告 | |||
| 組織 | 推奨 |
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| 著者 | 必須 | ||||
| 題名 | 必須 |
(英) Electrical Field Test Method of Resistive Open Defects between Dies by Quiescent Currents through Embedded Diodes |
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| 副題 | 任意 | ||||
| 要約 | 任意 |
(英) Dies in 3D stacked ICs are connected with Through-Silicon-Vias or micro bumps. Resistive open defects may occur at interconnects between the dies in fabrication process. The defects may grow to an open circuit fault in the field after shipping to a market. In this paper, a field test method is proposed so as the defect to be detected after shipping to a market before it becomes an open circuit fault. This test method is based on a quiescent supply current that is made flow through an interconnect between dies only in tests. It is shown by Spice simulation that an increase of 0.01Ω is detected by the test method in field tests. |
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| キーワード | 推奨 | ||||
| 発行所 | 推奨 | IEEE | |||
| 誌名 | 必須 |
(英) Proc. of The IEEE 2019 International 3D Systems Integration Conference
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| 巻 | 必須 | --- | |||
| 号 | 必須 | --- | |||
| 頁 | 必須 | P4022-1 P4022-5 | |||
| 都市 | 必須 | 仙台(Sendai/[日本国]) | |||
| 年月日 | 必須 | 2019年 10月 9日 | |||
| URL | 任意 | ||||
| DOI | 任意 | 10.1109/3DIC48104.2019.9058777 (→Scopusで検索) | |||
| PMID | 任意 | ||||
| CRID | 任意 | ||||
| Scopus | 任意 | ||||
| researchmap | 任意 | ||||
| 評価値 | 任意 | ||||
| 被引用数 | 任意 | ||||
| 指導教員 | 推奨 | ||||
| 備考 | 任意 | ||||