著作: [北田 貴弘]/[盧 翔孟]/[南 康夫]/[熊谷 直人]/[森田 健]/Room-temperature two-color lasing by current injection into a GaAs/AlGaAs coupled multilayer cavity fabricated by wafer bonding/[Japanese Journal of Applied Physics]
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種別 | 必須 | 学術論文(審査論文) | |||
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言語 | 必須 | 英語 | |||
招待 | 推奨 | ||||
審査 | 推奨 | ||||
カテゴリ | 推奨 | ||||
共著種別 | 推奨 | ||||
学究種別 | 推奨 | ||||
組織 | 推奨 | ||||
著者 | 必須 | ||||
題名 | 必須 |
(英) Room-temperature two-color lasing by current injection into a GaAs/AlGaAs coupled multilayer cavity fabricated by wafer bonding |
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副題 | 任意 | ||||
要約 | 任意 |
(英) Room-temperature two-color lasing was demonstrated by current injection into a GaAs/AlGaAs coupled multilayer cavity for terahertz emitting devices utilizing its difference-frequency generation (DFG) inside the structure. We prepared two epitaxial wafers with (001) and (113)B orientations and they were directly bonded to form the coupled multilayer cavity. The (001) side cavity contains two types of InGaAs multiple quantum wells to realize optical gain for two-color lasing while a single GaAs layer of the (113)B side cavity is a nonlinear medium for efficient DFG. Lasing behavior was clearly observed for two modes under pulsed current conditions at room temperature. We found that the intensity relation between two-color lasings was dependent on the pulse duration because of the different temporal profiles of emission intensity. Simultaneous two-color lasing in the device was also confirmed by measuring the sum-frequency generation signal using a beta barium borate crystal. |
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キーワード | 推奨 | ||||
発行所 | 推奨 | 応用物理学会 | |||
誌名 | 必須 |
Japanese Journal of Applied Physics([応用物理学会])
(pISSN: 0021-4922, eISSN: 1347-4065)
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巻 | 必須 | 57 | |||
号 | 必須 | 4S | |||
頁 | 必須 | 04FH03 04FH03 | |||
都市 | 任意 | ||||
年月日 | 必須 | 2018年 3月 1日 | |||
URL | 任意 | ||||
DOI | 任意 | 10.7567/JJAP.57.04FH03 (→Scopusで検索) | |||
PMID | 任意 | ||||
CRID | 任意 | ||||
WOS | 任意 | ||||
Scopus | 任意 | ||||
評価値 | 任意 | ||||
被引用数 | 任意 | ||||
指導教員 | 推奨 | ||||
備考 | 任意 |
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