著作: [盧 翔孟]/Ota Hiroto/[熊谷 直人]/[北田 貴弘]/[井須 俊郎]/GaAs/AlAs triple-coupled cavity with InAs quantum dots for ultrafast wavelength conversion devices/[Japanese Journal of Applied Physics]
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種別 | 必須 | 学術論文(審査論文) | |||
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言語 | 必須 | 英語 | |||
招待 | 推奨 | ||||
審査 | 推奨 | ||||
カテゴリ | 推奨 | ||||
共著種別 | 推奨 | 国内共著(徳島大学内研究者と国内(学外)研究者との共同研究 (国外研究者を含まない)) | |||
学究種別 | 推奨 | ||||
組織 | 推奨 | ||||
著者 | 必須 | ||||
題名 | 必須 |
(英) GaAs/AlAs triple-coupled cavity with InAs quantum dots for ultrafast wavelength conversion devices |
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副題 | 任意 | ||||
要約 | 任意 |
(英) We have investigated a GaAs/AlAs triple-coupled multilayer cavity structure with InAs quantum dots for an ultrafast wavelength conversion device. Three cavity modes with the resonance frequencies ω1, ω2, and ω3 were used for efficient wavelength conversion via a four-wave mixing (FWM) process. Identical frequency separation between two adjacent modes (ω1- ω2 = ω2- ω3) was successfully realized using a controlled lateral thickness variation across the wafer. Time-resolved FWM signals from the triple-coupled multilayer cavity were measured using 100 fs laser pulses. The incident laser pulses were divided into two pulses and each of them was spectrally shaped individually so that the input and control pulses only covered the ω1 and ω2 modes, respectively. The wavelength-converted FWM signal with a frequency of ω3 (= 2ω2- ω1) was clearly observed when the sample was simultaneously irradiated with the input and control laser pulses. |
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キーワード | 推奨 | ||||
発行所 | 推奨 | 応用物理学会 | |||
誌名 | 必須 |
Japanese Journal of Applied Physics([応用物理学会])
(pISSN: 0021-4922, eISSN: 1347-4065)
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巻 | 必須 | 56 | |||
号 | 必須 | 4S | |||
頁 | 必須 | 04CH02 04CH02 | |||
都市 | 任意 | ||||
年月日 | 必須 | 2017年 2月 21日 | |||
URL | 任意 | ||||
DOI | 任意 | 10.7567/JJAP.56.04CH02 (→Scopusで検索) | |||
PMID | 任意 | ||||
CRID | 任意 | ||||
WOS | 任意 | ||||
Scopus | 任意 | 2-s2.0-85017116527 | |||
機関リポジトリ | 111097 | ||||
評価値 | 任意 | ||||
被引用数 | 任意 | ||||
指導教員 | 推奨 | ||||
備考 | 任意 |