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著作: [北田 貴弘]/Ota Hiroto/[盧 翔孟]/[熊谷 直人]/[井須 俊郎]/Surface Emitting Devices Based on a Semiconductor Coupled Multilayer Cavity for Novel Terahertz Light Sources/[電子情報通信学会英文論文誌(C)]

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EID
322446
EOID
931692
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0
LastModified
2018年11月22日(木) 16:41:42
Operator
三木 ちひろ
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Owner
加藤 真樹
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種別 必須 学術論文(審査論文)
言語 必須 英語
招待 推奨 招待
審査 推奨
カテゴリ 推奨
共著種別 推奨
学究種別 推奨
組織 推奨
  1. 徳島大学.大学院社会産業理工学研究部.フロンティア研究センター.光ナノテクノロジー研究部門.ナノマテリアルテクノロジー分野(日亜寄附講座)(〜2018年3月31日)
著者 必須
  1. 北田 貴弘(->個人[塚越 貴弘])
    役割 任意
    貢献度 任意
    学籍番号 推奨
  2. (英) Ota Hiroto
    役割 任意
    貢献度 任意
    学籍番号 推奨
  3. 盧 翔孟
    役割 任意
    貢献度 任意
    学籍番号 推奨
  4. 熊谷 直人
    役割 任意
    貢献度 任意
    学籍番号 推奨
  5. 井須 俊郎
    役割 任意
    貢献度 任意
    学籍番号 推奨
題名 必須

(英) Surface Emitting Devices Based on a Semiconductor Coupled Multilayer Cavity for Novel Terahertz Light Sources

副題 任意
要約 任意

(英) Compact and room-temperature operable terahertz emitting devices have been proposed using a semiconductor coupled multilayer cavity that consists of two functional cavity layers and three distributed Bragg reflector (DBR) multilayers. Two cavity modes with an optical frequency difference in the terahertz region are realized since two cavities are coupled by the intermediate DBR multilayer. In the proposed device, one cavity is used as the active layer for two-color lasing in the near-infrared region by current injection and the other is used as the second-order nonlinear optical medium for difference-frequency generation of the two-color fundamental laser light. The control of the nonlinear polarization by face-to-face bonding of two epitaxial wafers with different orientations is quite effective to achieve bright terahertz emission from the coupled cavity. In this study, two-color emission by optical excitation was measured for the wafer-bonded GaAs/AlGaAs coupled multilayer cavity containing self-assembled InAs quantum dots (QDs). We found that optical loss at the bonding interface strongly affects the two-color emission characteristics when the bonding was performed in the middle of the intermediate DBR multilayer. The effect was almost eliminated when the bonding position was carefully chosen by considering electric field distributions of the two modes. We also fabricated the current-injection type devices using the wafer-bonded coupled multilayer cavities. An assemble of self-assembled QDs is considered to be desirable as the optical gain medium because of the discrete nature of the electronic states and the relatively wide gain spectrum due to the inhomogeneous size distribution. The gain was, however, insufficient for two-color lasing even when the nine QD layers were used. Substituting two types of InGaAs multiple quantum wells (MQWs) for the QDs, we were able to demonstrate two-color lasing of the device when the gain peaks of MQWs were tuned to the cavity modes by lowering the operating temperature.

キーワード 推奨
  1. (英) coupled multilayer cavity
  2. (英) two-color lasing
  3. (英) frequency conversion
  4. (英) terahertz source
発行所 推奨 電子情報通信学会
誌名 必須 電子情報通信学会英文論文誌(C)([電子情報通信学会])
(pISSN: 0916-8524, eISSN: 1745-1353)
ISSN 任意 0916-8524
ISSN: 0916-8524 (pISSN: 0916-8524, eISSN: 1745-1353)
Title: IEICE transactions on electronics
Supplier: 一般社団法人電子情報通信学会
Publisher: Oxford University Press
 (Webcat Plus  (J-STAGE  (Scopus  (CrossRef (Scopus information is found. [need login])
必須 E100-C
必須 2
必須 171 178
都市 任意
年月日 必須 2017年 2月 1日
URL 任意
DOI 任意 10.1587/transele.E100.C.171    (→Scopusで検索)
PMID 任意
NAID 任意
WOS 任意
Scopus 任意
機関リポジトリ 110567
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指導教員 推奨
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