徳島大学 教育・研究者情報データベース(EDB)

1. 徳島大学.大学院社会産業理工学研究部.フロンティア研究センター.光ナノテクノロジー研究部門.ナノマテリアルテクノロジー分野(日亜寄附講座)(〜2018年3月31日)

1. 北田 貴弘([徳島大学.大学院社会産業理工学研究部.理工学域.ナノマテリアルテクノロジー(日亜)]/->個人[塚越 貴弘])

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2. (英) Shimomura Satoshi

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3. (英) Hiyamizu Satoshi

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(英) Surface segregation of indium atoms during molecular beam epitaxy of InGaAs/GaAs superlattices on (n11)A GaAs substrates

(英) We have investigated substrate off-angle dependence of surface segregation of In atoms during molecular beam epitaxy (MBE) of pseudomorphic In_0:08Ga_0:92As/GaAs superlattices (SLs) on (n11)A-oriented GaAs substrates (n=3-5). Surface segregation length ofthe In atoms (λ: 1/e decay length of the In content profile along the growth direction) was characterized by high resolution X-raydiffraction (HRXRD) and low-temperature (11 K) photoluminescence (PL) measurements. λ obtained for the (n11)A SLs were 1.21.4times longer than that (λ=1:57 nm) for the simultaneously grown (1 0 0) SL, and the (4 1 1)A SL showed the longest λ of 2.16 nm. Theobtained substrate off-angle dependence of the In segregation length is quite similar to the incorporation life-time (t_c) of Ga adatomsreported for MBE growth of GaAs on channeled (1 0 0) substrates, indicating that larger surface migration of Ga adatoms during MBE growth on (n11)A substrates causes enhanced surface segregation of In atoms in the (n11)A InGaAs system.