徳島大学 教育・研究者情報データベース(EDB)

1. (英) Higuchi Yu

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2. (英) Uemura Masaya

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3. (英) Masui Yuji

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4. 北田 貴弘([徳島大学.大学院社会産業理工学研究部.理工学域.ナノマテリアルテクノロジー(日亜)]/->個人[塚越 貴弘])

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5. (英) Shimomura Satoshi

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6. (英) Hiyamizu Satoshi

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(英) V/III ratio dependence of surface migration length of As4 molecules during molecular beam epitaxy of GaAsP on (411)A GaAs substrates

(英) The surface migration length of As4 molecules on (4 1 1)A surfaces during molecular beam epitaxy has been determined from lateral profiles of As content (x) in GaAs_xP_1-x layers grown on (4 1 1)A GaAs substrates with a (1 0 0) side-slope using As₄ and P₂ molecular beams. The migration length of As₄ molecules on (4 1 1)A surfaces at a substrate temperature of 535°C was found to steeply increase from 4 to 10 μm and saturate to 10 μm with increasing V/III flux ratio. This V/III ratio dependence of migration length of As₄ is understood by a proposed model where an As₄ molecule is dissociated and incorporated into the crystal phase when an As₄ molecule encounters a Ga adatom on the (4 1 1)A surface. Quantitative analysis is made using rate equations based on the model and the experimental results are reproduced with reasonable fitting parameter.