徳島大学 教育・研究者情報データベース(EDB)

1. 北田 貴弘([徳島大学.大学院社会産業理工学研究部.理工学域.ナノマテリアルテクノロジー(日亜)]/->個人[塚越 貴弘])

   役割	任意
   貢献度	任意
   学籍番号	推奨

2. (英) Aoki Toyohiro

   役割	任意
   貢献度	任意
   学籍番号	推奨

3. (英) Watanabe Issei

   役割	任意
   貢献度	任意
   学籍番号	推奨

4. (英) Shimomura Satoshi

   役割	任意
   貢献度	任意
   学籍番号	推奨

5. (英) Hiyamizu Satoshi

   役割	任意
   貢献度	任意
   学籍番号	推奨

(英) Optimized channel thickness for high electron mobility in pseudomorphic In_0.74Ga_0.26As/In_0.52Al_0.48As quantum-well HEMT structures with (411)A super-flat interfaces grown by MBE

(英) We have investigated channel thickness (L_w) dependence of transport properties of two-dimensional-electron gas (2DEG) in pseudomorphic In_0:74Ga_0:26As/In_0:52Al_0:48As quantum well high electron mobility transistor (QW-HEMT) structures with extremely flat heterointerfaces [(411)A super-at interfaces] grown on (411)A InP substrates by molecular beam epitaxy (MBE). The highest electron mobility of 90,500cm²/Vs (77K) with a sheet carrier concentration (N_s ) of 3.1 10¹² cm^-2 was observed for the (411)A QW-HEMT structure with L_w=8nm, which is about 1.5 times larger than the best value (μ= 61,000cm²/Vs at 77K) of ever reported electron mobility with a similar N_s of 3.0×10¹² cm^-2 for the InGaAs/InAlAs QW-HEMT structure grown on a (100) InP substrate. This enhancement of the electron mobility of the (411)A QW-HEMT structure is mainly due to much improved atness of the (411)A InGaAs/InAlAs heterointerfaces compared with those of conventional (100) interfaces, which results in a large reduction of interface roughness scattering of 2DEG.