徳島大学 教育・研究者情報データベース(EDB)

1. (英) Shimomura Satoshi

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2. (英) Kitano Yoshiaki

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3. (英) Kuge Hidehiko

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4. 北田 貴弘([徳島大学.大学院社会産業理工学研究部.理工学域.ナノマテリアルテクノロジー(日亜)]/->個人[塚越 貴弘])

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5. (英) Nakajima Kazuo

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6. (英) Hiyamizu Satoshi

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(英) Lattice-matched In_xGa_1-xAs/In_xAl_1-xAs quantum wells (x = 0.18 and 0.19) grown on (411)A- and (100)-oriented InGaAs ternary substrates by molecular beam epitaxy

(英) High-optical quality lattice-matched In_xGa_1-xAs/In_xAl_1-xAs quantum wells (QWs) with indium contents of x=0.18-0.19 have been successfully grown on (4 1 1)A- and (1 0 0)-oriented InGaAs ternary substrates by molecular beam epitaxy. Strong photoluminescence (PL) with a narrow linewidth was observed from both (4 1 1)A and (1 0 0) QWs at 12 K. The peak energy of PL from QWs had a good correlation with the calculated exciton emission energy based on the band parameter of the InGaAs well layers and InAlAs barrier layers. The result indicates that the (4 1 1)A and (1 0 0) InGaAs/InAlAs QWs on InGaAs ternary substrates have 0.2 eV larger energy gap difference between their well and barrier materials than GaAs/AlAs QWs on GaAs binary substrates or InGaAs/InAlAs QWs on InP binary substrates. In addition, the (4 1 1)A In_0.18Ga_0.82As/In_0.18Al_0.82As QWs had a narrower PL linewidth than (1 0 0) QWs indicating that smoother interfaces were realized in the (4 1 1)A QWs.